ASI10726 Search Results

ASI10726 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
ASI10726		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF

ASI10726 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ASI10726 Abstract: VHB40-28F Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB40-28F is Designed for B FEATURES: .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 5.0 A VCBO 65 V	Original	PDF	VHB40-28F VHB40-28F ASI10726 ASI10726
VHB40-28F Abstract: TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132 Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.	Original	PDF	VHB40-28F VHB40-28F TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132

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ASI10726

Abstract: VHB40-28F
Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB40-28F is Designed for B FEATURES: .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 5.0 A VCBO 65 V

Original

PDF

VHB40-28F VHB40-28F ASI10726 ASI10726

VHB40-28F

Abstract: TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132
Text: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.

Original

PDF

VHB40-28F VHB40-28F TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132