AT ALPHA INDUSTRIES Search Results

95210

Contextual Info: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET

Contextual Info: Warranty/Order Information How to Order Warranty Provisions Orders may be placed with our local field sales representatives or at: Alpha makes no warranty, expressly or by implica­ tion, except as set forth. Alpha warrants that the products delivered hereunder will be in substantial

AFM02N5-55

Contextual Info: Low Noise Packaged GaAs MESFET ED Alpha m i m u T iir in iiiiiiii I iiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii ii iiir AFM02N5-55, AFM02N5-56 Features Drain Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz

XDL13.567968

Abstract: 6/18/XDL13.567968
Contextual Info: El]Alpha Ka-Band Power GaAs MESFET AFM06P2-000 Features • 22.5 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC-40 GHz ■ 0.25 |im Ti/Pt/Au Gates ■ Passivated Surface

SMA rf pogo pin

Abstract: oryx
Contextual Info: o -Sì ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices £ -ä oc o V i t 'S ^5 "o ro $ Introduction Alpha Industries conducts ESD testing at both the device and system levels. These tests are based on the requirements outlined in:

Contextual Info: Array Antennas An array antenna consists o f similar radiation elements that are coupled together to produce a prescribed radiation pattern. Many array antennas have been developed at Alpha to fit various applications. In general, array antennas are small, compact, and low

ALPHA INDUSTRIES

Contextual Info: Array Antennas An array antenna consists o f similar radiation elements that are coupled together to produce a prescribed radiation pattern. Many array antennas have been developed at Alpha to fit various applications. In general, array antennas are small, compact, and low

4511 gm

Abstract: gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: ^ Alpha Ka-Band Power GaAs MESFET AFM08P2-00 Chip Layout Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 |un Ti/Pt/Au Gates ■

AFM02N5-00

Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip

pt 11400

Abstract: kaba
Contextual Info: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band

alpha diode pin limiter

Abstract: CLA4603 CLA4601-000 CLA4606-000
Contextual Info: Silicon Limiter Diode Chips CLA Series Features • Established Alpha Limiter Diode Process ■ High Power, Mid-range and Clean-up Designs ■ Low Insertion Loss 0.1 dB at 10 GHz ■ Power Handling to 66 dBm Outline Drawings ■ Tight Control of Basewidth

CLA4608-000

Abstract: cla4603-000 cla-4601-000 rs 3060 cj
Contextual Info: Limiter Diodes CLA Series Features • Established Alpha Limiter Diode Process ■ High Power, Mid-range and Clean-up Designs ■ Low Insertion Loss 0.1 dB at 10 GHz ■ Power Handling to 66 dBm Outline Drawings ■ Tight Control of Basewidth 149-801 ANODE METALIZED GOLD DOT

Contextual Info: Limiter Diodes CLA Series Features • Established Alpha Limiter Diode Process ■ High Power, Mid-range and Clean-up Designs ■ Low Insertion Loss 0.1 dB at 10 GHz ■ Power Handling to 66 dBm Outline Drawings ■ Tight Control of Basewidth 149-801 ANODE METALIZED GOLD DOT

Contextual Info: Low Noise Chip on Board PHEMT ESAlpha AFP02N3-104 Features Chip on Board Layout Broadband Operation, D C -1 8 GHz Low Noise 0.4 dB at 4 GHz Epoxy Encapsulation High Associated Gain, 13.5 dB at 4 GHz Low Cost Chip on Board Tape and Reel Description Alpha’s A F P 0 2 N 3 -1 0 4 is a high performance low

Contextual Info: I 11*j: £§•i'x/ EH Alpha Hyperabrupt Junction Tuning Varactor S M V 1 2 6 3 -0 7 9 Features ■ High Capacitance Ratio at Low Reverse Voltage ■ Ultra Small SC-79 Package ■ Designed for High Volume, Low Cost Battery Applications ■ Available in Tape and Reel Packaging

Contextual Info: introduction Alpha Industries is a leading manufacturer of microwave products for a wide range of commercial and military applications from RF through millimeter waves. Included among these products is a broad array of semiconductor devices, components, and

RTI Electronics

Contextual Info: 18/11/2013 Precision Thermistors Accu-Curve Search Products Applications Industries Partners Support About Us You are here: Home > Products > NTC Thermistor Elements > Precision Thermistors (Accu-Curve) Precision Temperature Measurement and Control Devices

bussmann fuses certificate

Abstract: Cooper Bussmann mdl 106E 107D GR-1089-CORE Bussmann MDL-2
Contextual Info: Engineering Product Specification TCP TM Telecom Circuit Protector - The information contained in this document is the property of Cooper Industries, Inc. It is not for public disclosure. Possession of the information does not convey any right to loan, sell or disclose the CONFIDENTIAL information. Unauthorized reproduction or use of the information is

parabolic antenna sidelobe

Contextual Info: Beamwidth and Gain Selection Charts ALPHA INDUSTRIES, INC. • TRG GROUP • 20 SYLVAN ROAD, WOBURN, MA 01801 Beamwidth and Gain Selection Charts A ntenna ty p e G ain R ange 1 Beam w idth Range 2 S id elo be Range Nom inal A p p lica tio n Parabolic Reflectors with Prime Focus

TR/0603FA500

Abstract: 0603FA FUSE 500mA chip fuse 3A 0603FA1A 0603FA2A 0603FA3A 0603FA4A a4916
Contextual Info: Engineering Product Specification 0603FA - The information contained in this document is the property of Cooper Industries, Inc. It is not for public disclosure. Possession of the information does not convey any right to loan, sell or disclose the CONFIDENTIAL information. Unauthorized reproduction or use of the

Contextual Info: 18–40 GHz Surface Mount Voltage Variable Attenuator AV850M2-A2 Patent Pending Features • Surface Mount Package ■ 33 dB Attenuation Range ■ +10 dBm P1 dB All Attenuation States ■ Low Insertion Loss ■ 100% RF and DC Testing Description The AV850M2-A2 is a broadband millimeterwave voltage

D4206

Abstract: C5802 transistor nec 7805a RCA SK CROSS-REFERENCE nokia 2700 classic circuit diagram c5802 mobile nokia circuit diagram 1202-2 DBL 2028 transistor C1162 C1162
Contextual Info: Division of RF Industries Coax Connector Solutions for over 30 years Connectors & Adapters BNC, TNC, N, SMA, SMB, SSMB, MCX, MMCX, UHF, Mini-UHF, 7-16 DIN, 1.0/2.3 and more Also available in reverse polarity, reverse thread and 75-ohm Preparation & Installation Tools

D4206

Abstract: C5802 transistor nokia 2700 classic circuit diagram mobile nokia circuit diagram 1202-2 c5802 nec 7805a transistor C1162 RCA SK CROSS-REFERENCE C1162 m50442
Contextual Info: Division of RF Industries Coax Connector Solutions for over 30 years Connectors & Adapters BNC, TNC, N, SMA, SMB, SSMB, MCX, MMCX, UHF, Mini-UHF, 7-16 DIN, 1.0/2.3 and more Also available in reverse polarity, reverse thread and 75-ohm Preparation & Installation Tools

Contextual Info: 18–40 GHz Surface Mount Voltage Variable Attenuator AV850M2-A2 Patent Pending Features • Surface Mount Package ■ 30 dB Attenuation Range ■ +10 dBm P1 dB All Attenuation States ■ Low Insertion Loss ■ 100% RF and DC Testing Description The AV850M2-A2 is a broadband millimeterwave voltage