AT SOD 89 Search Results
AT SOD 89 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ24V |
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Zener Diode, 24 V, SOD-523 | Datasheet | ||
| CEZ20V |
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Zener Diode, 20 V, SOD-523 | Datasheet | ||
| CEZ36V |
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Zener Diode, 36 V, SOD-523 | Datasheet | ||
| CEZ30V |
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Zener Diode, 30 V, SOD-523 | Datasheet | ||
| CEZ16V |
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Zener Diode, 16 V, SOD-523 | Datasheet |
AT SOD 89 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Z E N E R D IODES 500mW ZMM5225 / ZMM5267 CASE T Y P E : SOD-8ÛC (M ini-M ELF Glass) ÜÜ Nominal Zener voltage<3> at In VzV Type Test current Maximum Zener impedance)1'' at In I n mA Zz t Q at IZK=0.25mA Zzk O Maximum reverse leakage current Typical |
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500mW) ZMM5225 ZMM5267 | |
MMSZ5243
Abstract: p2 n5
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MMSZ522S MMSZ5267 OD-123 MMSZ5225 MMSZ5226 MMSZ5227 MMSZ5228 MMSZ5229 MMSZ5230 MMSZ5231 MMSZ5243 p2 n5 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A) |
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LRB551V-30T1GG LRB551V-30T1G 3000/Tape LRB551V-30T3G 10000/Tape | |
schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
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OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08 | |
FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
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OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045 | |
diode bas32
Abstract: BAS32 BAS32 sod80 lp450 K50F BAS32 SOD-80
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kib53' OD15441 BAS32 BAS32 diode bas32 BAS32 sod80 lp450 K50F BAS32 SOD-80 | |
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Contextual Info: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at |
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BAS32 BAS32 OD-80 | |
schottky diode sod-123 marking code 120
Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
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MBR130T1, MBR130T3 OD-123 1085C/W OD-123 schottky diode sod-123 marking code 120 MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120 | |
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Contextual Info: Mounting Instructions Supply for automatic assembly In contrast to components with wire leads, practically all SMDs can be supplied in two package forms: • • Bulk Tape Bulk The most straightforward and low-cost mode of SMD d; ry is in bulk, in either antistatic or |
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
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B132-H7456-GI-X-7600 68W SOT ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE | |
free transistor equivalent book
Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
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DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE | |
marking H2A sot-23
Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
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DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3 | |
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Contextual Info: <P3 j —j m n r r ^ Pli ELECTRICAL SPECIFICATIONS' 1,0 INDUCTANCE: P3-J3 = P4-J4 89 uH MIN, 0,01V, 10 KHz, 2,0 DC RESISTANCE: P3-J3 : 0,5 ohn MAX P4-J4 : 0,5 ohn MAX 3,0 IMPEDANCE: FREQUENCY (MHz) □HMS MIN 1 500 10 2000 30 3000 70 2000 SOD 600 500 300 |
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SI-20058 SI-20058 | |
marking 18w sot23
Abstract: marking code 564 SC-74 BRD8011/D sot23-6 marking code 561 QFN 64 8x8 footprint On semiconductor date Code sot-143 24w cooler tvs SMC MARKING lg diode 923 SMA marking code LG
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BRD8011/D January-2007 marking 18w sot23 marking code 564 SC-74 BRD8011/D sot23-6 marking code 561 QFN 64 8x8 footprint On semiconductor date Code sot-143 24w cooler tvs SMC MARKING lg diode 923 SMA marking code LG | |
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Contextual Info: , L/ nc. / C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF634 0(2) DESCRIPTION • Drain Current-ID=8.1A@ TC=25°C • Drain Source Voltage: VDSS= 250V(Min) • Static Drain-Source On-Resistance |
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IRF634 O-220C | |
BA204
Abstract: BA-204
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NT102Contextual Info: t ö ^ i S F * 5» - u r - »•••• •'-’:^ - v '- « f '* 1 jp L J , I ;L^|p /X :;910-280^143§ b ;ì SILICON SENSORS SIRAD 3 Gallium Aluminum Arsenide Light , Emitting Diodes, produce a narrow band of high intensity non coher ent infrared energy, peaking at 890 nanometers. The SIRAD 3 comes |
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EIA-468 label location
Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
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DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC r14525 EIA-468 label location W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363 | |
TRUMPION MICROELECTRONICS
Abstract: zurac2 TRUMPION RGB sog deinterlace yuv422 T-0911 3102B AD9884 CCIR-656 SAA7113
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T-0911/0912 T-0911/T-0912 PQFP160 12F-5 TRUMPION MICROELECTRONICS zurac2 TRUMPION RGB sog deinterlace yuv422 T-0911 3102B AD9884 CCIR-656 SAA7113 | |
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Contextual Info: • Sñ SILICON SENSORS INC D E lfl E SB ^ SS 0 0 0 0 2 0 5 0 T-41-13' I^P‘^ g è v llW jt V V ié Îô n ^ if t :- 5 ^ i 3 l ^ Gl Telephone: 608 -935-2707 ¿tWX: 910-280-1^ " " kL Silicon Sensors SIRAD 4 Gallium Aluminum Arsenide Light Emit- ^ ting Diode emits an intense spectrally narrow band of non coherent infrared energy peaking at 890 nanometers. The SIRAD 4 has a lens^ v |
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T-41-13' | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package |
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LMDL301T1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction |
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LMVL3401T1G OD-323 3000/Tape LMVL3401T3G 10000/Tape | |
lm5z5v6Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 100 mW SOD–523 Surface Mount 1 ORDERING INFORMATION Device LM5Z2V4T1 SERIES Package Shipping LM5ZxxxT1 SOD-523 3000/Tape&Reel LM5ZxxxT3 SOD-523 10000/Tape&Reel This series of Zener diodes is packaged in a SOD–523 surface mount package that |
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OD-523 3000/Tape 10000/Tape lm5z5v6 | |
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Contextual Info: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U07 NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver |
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MPS-U07 MPS-U57 | |