ATR 120 Search Results

2SB123B

Contextual Info: T ransistors ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package | Part No. 2SA937AMLN Application ATR Low Noise ATV Driver Storobo Flash Low VcEtsat

2SB1485

Abstract: 2SB1460 2SB1307M 2sb909m 2SB1042M 2SD1866 2SB1242 2sd1225m
Contextual Info: Ei 1 ransistoi s ★★ PC board collector s copper foil area 1cm? or over; PC board thickness, 1.7mm ATR, ATV Types * Under Development Type ATR ATV — 2SA937MLN 2SC2021MLN — 2SA937M 2SA1547 2SC2021M 2SC4010 n W 2SC 4776M E 372SC4778 2SA1548 2SA874M

2SB1242

Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Contextual Info: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

2SB1242

Abstract: 2SD 92 M 2SC401 2sd darlington 2SB1485
Contextual Info: T ra n s is to rs ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package Application ATR ATV Part No. Driver Storobo Flash Low VcE sat Low VcE(sat) - 2SC2021M LN

2SB1242

Abstract: 2SB1485
Contextual Info: T r a n s is to r s ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package ATR Application VCEO V VcES * * V CER ATV Part No. _ 2SA937AMLN -5 0 40 50

Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

R/TC554001

Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

A10C

Abstract: A15C
Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

A15C

Abstract: TC554001 TSOP-II-32
Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: TC554001AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to

Contextual Info: TC554001AF/AFT/ATR-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to

TC554001

Contextual Info: TO SH IBA T C554001AF/AFT/ATR-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: UNCONTROLLED DOCUMENT SML-LX0402USBC/ATR PART NUMBER [0.031] r 0.50 [0.020] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25’C If = 20mA PARAMETER MAX MIN TYP 468 PEAK WAVELENGTH i. FORWARD VOLTAGE - 1.00 [0.039] - 5.0 36 4.0 100 120 VIEWING ANGLE EMITTED COLOR:

Contextual Info: www.martekpower.com ATR-1500-12-Y 12V Output, 1500 Watts AC Front End FEATURES • Wide input voltage range 90-264VAC with active power factor correction • 1U configuration • Active current share with ORing FET • 12VDC @ 1A auxiliary standby power

Contextual Info: RUGGED SYSTEMS 12R1/12R2/12RC ATR ENCLOSURES ACCESSORIES SHELF MANAGEMENT BACKPLANES Rugged COTS: Products and Services Elma Electronic www.elma.com Elma Electronic ABOUT ELMA ELMA PRODUCT DIVISIONS Founded in 1962, Elma is an industry innovator in the design and manufacture

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

mitsubishi year code

Contextual Info: MITSUBISHI LSIs KÄ-atr- MH8V7245BWZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245BWZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

ATR-4140L50

Contextual Info: ATR-4 400 VAC autotransformers, terminal blocks Autotransformers, open model, for switchboard mounting, to control the rotational speed of voltage controllable motors 400 VAC, 50/60 Hz (fans, pumps, among others). Connecting in “V” (2 transformers needed or straight 1 / phase (3 transformers needed).

ATR121

Abstract: ATR0603 BA 3922 ATR0402 ATR0805 ATR1206 marking code 99 marking atr
Contextual Info: THICK FILM CHIP RESISTORS •CONSTRUCTION Overcoating RuO2 Type Resistor 47E Alumina substrate Electrode 2873 563 ■OPERATING TEMPERATURE RANGE -55˚C ~ +155˚C Plating Ni+Sn Unit: mm ■DIMENSIONS Dimensions Type 2873 W L L1 L1 H L2 L2 L W H L1 L2 ATR 0402

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 1 1 1O SYC -ATR ELECTRO-OPTICAL CHARACTERISTICS Ta =25X PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE AXIAL INTENSITY LUMINOUS FLUX 0,50 [0,020] 2,40 [0,094] 2,00 [0,079] 1.70 [0.067] 2.0 1 Z.5 % YELLOW EPOXY LENS FINISH:

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML-LX1 1 1OUSBC-ATR ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X lf=350mA PARAMETER MIN TYP MAX UNITS PEAK WAVELENGTH 4-70 nm FORWARD VOLTAGE 3.5 4,0 Vf REVERSE VOLTAGE 5.0 Vr AXIAL INTENSITY 2BÛ0 mcd LUMINOUS FLUX 8 Im VIEWING ANGLE