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Contextual Info: First Edition LCD M odule Technical Specification s e p 5,2005 Final Revision Apr 13, 2012 Type No. DM F-50840N F-FW -AU E-Bl N C ustom er STANDARD Custom er's Product No : - KYOCERA Display Corporation Approved: Teru0 Kuragane QUALITY ASSURANCE DIVISION

Contextual Info: HOLTEK r r HT812D0 2.8 Second LOG-PCM Speech Features • • • • • • • • • • • • O perating voltage: 2.4V~5.0V D irectly drives an external tran sisto r Low standby current l|iA Typ. for VDD=3V M inim al external com ponents 124 words tab le ROM for key functions

588F

Abstract: hcn 73 0133N
Contextual Info: £V :uíjoj ü 11 9dÁ} D ddD a •a s y B u im d jq js u jo ^ s n o £v 9 Z IS p n p o jd J.O £ l } 9 9 t|S OU Bmp S9Ü9S H10 Odd dOJ d 0133N N 00 HOlId t u t u f o am ; dr O d -H lO Y O X313 388S Á|¡iud¿ p n p c u d 9 3 3 *0 - —s ¿ ro 33d 33d o k>

resistor 100 ohm CECC

Contextual Info: NCT 0603 NCU 0805 Flat Chip R esistor Products Low Ohmic 96 % A lum in a C eram ic S ubstrate Term inatio n Base 52 BEYSCHLAG Catalogue 1999 Flat Chip Resistor P roducts ¡g] NCT / NCU Low Ohmic • Unique Subohm ic Chip Resistor Product • S tandard TC: 100 pp m /K

CDP1802

Abstract: CDP1857 CDP1857C CDP1857CD CDP1857CE
Contextual Info: CDP1857C Semiconductor 4-Bit Bus Buffer/Separator March 1997 Features Description • Provides Easy Connection of I/O to CDP1800-Series Microprocessor Data Bus The CDP1857C is a 4-bit CM OS non-inverting bus separator designed for use in CDP1800-series m icroprocessor systems. It can

HIP5010

Contextual Info: HIP5010, HIP5011 S em iconductor November 1998 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge D esigned with the P 6 and Pentium in mind, the Harris S y n c h ro F E T ™ family provides a new approach for im plem enting a s y n c h ro n o u s rectified buck switching

Contextual Info: HOLTEK n r ^ HT811A0 2.8 Second 2 Keys Voice Features • • • • • • • • • • O perating voltage: 2.4V~5.0V D irectly drives an external tran sisto r Low standby current l|iA Typ. for VDD=3V M inim al external com ponents 124 words tab le ROM for key functions

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM101524 Product Preview 1M x 4 Bit Fast Static Random Access Memory with ECL I/O ^ TB PACKAGE 400 M IL TAB CASE 984A-01 The MCM101524 is a 4,194,304 bit static randon access memory organized as 1,048,576 words of 4 bits. This circuit is fabricaied using high performance

Contextual Info: HBLTEK f f HTG12530 22-Second Music Voice Features • • • • • • • • O perating voltage: 2.4V-5.0V Directly drives an external tra n sisto r Low standby current l|_iA typ. for VDD=3V M inim um external components 509 notes (max.) for table ROM

gt 543 display

Abstract: JTC83230-0025S QFP80 TC83230-0025 tt 2074
Contextual Info: TOSHIBA TC83230-0025/JTC83230-0025S TO SHIBA CMOS DIGITAL IN TEGRATED CIRCUIT SILICON MONOLITHIC TC83230-0025 / JTC83230-0025S TC83230-0025 / JTC83230-0025S : SINGLE-CHIP CM OS LSI FOR PTMFL CALCULATORS WITH PRINTERS APPLICABLE PRINTER HEADS 63 MANUFACTURED BY ALPS

Contextual Info: HIP5015, HIP5016 Semiconductor 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge Features Description • Complementary Drive, Half-Bridge Power NMOS Designed with the Pentium™ in mind, the Harris Synchro­ FET™ family provides a new approach for implementing a syn­

DMC20261

Abstract: optrex lcd display dmc20261 DMC20261NY-LY-CCE-CMN
Contextual Info: First Edition Sep 6, 2005 LCD Module Technical Specification Type No. Final Revision DMC20261NY-LY-CCE-CMN Approved by Quality Assurance Division Checked by (ACI Engineering Division) T.Yuchi Prepared by (ACI Engineering Division) Table of Contents 1. G eneral S p e cifica tio n s . 2

ntc 3d-15

Abstract: tR0150r NTC 4,7 Siemens TR0150
Contextual Info: H Y » Ö l91/ I Ü J jtiilL -B U /- 256k x 16 - Bit Dynamic RAM INFORMATION NOTE NO.4 9 vÇ vRi v i rn v 4i Kì j wm m nw n• ■nw ww w i mn■—»Fi h n un v■ Ni l A M in * —* I f P i V k / U i « M A i ' A k # i r t l # W a b <a Ì a \ n / p u l ^» i

ac08m

Contextual Info: MOTOROLA Order this document by MAC08MT1/D SEMICONDUCTOR TECHNICAL DATA MAC08MT1 S O T -223 Triac Motorola preferred device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in

pa547

Abstract: 3L60
Contextual Info: BURR-BROWN I OPA547 1 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to +30V T he O PA 547 is a low cost, high-voltage/high-current operational am plifier ideal fo r driving a w ide variety

Contextual Info: First Edition LCD M odule Technical Specification Nov. 05, 2 0 1 0 Final Revision JMSBftfT A p r. 10, 2 0 1 2 T-55596G D035J U -LW -AAN STANDARD / Customer —K Custom er's Product No KYOCERA Display Corporation Approved: Checked: Prepared: Toshiyuki Okamoto

GE CR103

Abstract: A 3198
Contextual Info: M CR102 M C R 103 Silico n Controlled Rectifiers Reverse B lo ck in g Triode T h yristors A n n u la r P N P N d e v ic e s d e s ig n e d fo r lo w cost, h ig h v o lu m e c o n s u m e r a p p lic a ­ t io n s su c h a s relay a n d la m p d rive rs, s m a ll m o to r co ntrols, gate d riv e rs fo r large r

78SR105

Abstract: 78SR112 1j25
Contextual Info: For assistance or to order, call 800 531-5782 7« fW i WC DI I 1 A 1.5 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR • High Efficiency >85% • Self-Contained Inductor • Internal Short Circuit and Over-Temperature Protection • Pin Compatible with Existing

Q321

Abstract: HA2515
Contextual Info: S em iconductor September 1998 File Number 2893.3 Features 12MHz, High Input Impedance, Operational Amplifier • S lew R a te .60V/|as H A -2 51 5 is a high p e rfo rm an ce opera tiona l am p lifie r w hich

8D140

Abstract: CQL71A 9D140 CONNECTOR Ntype laser diode MCA321 7 pin potentiometer
Contextual Info: PHILIPS 41E INTERNATIONAL D m 711002b APR 0 3 D D E M lb ? T E iP H IN pHXjrO 1990 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 FEATURES DISCRETE SEMICONDUCTORS tab 2 • High power collimated beam

6n55 data

Abstract: MTH6N60 6n55 MTH6N55
Contextual Info: MOTOROLA SC XSTRS/R F 14E D | b3b?ES4 QQÖTÖHB 7 | MOTOROLA 7 ^ 3 • SEMICONDUCTOR TECHNICAL DATA MTH6N55 MTH6N60 MTM6IM60 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high

Ic A3100

Abstract: CA3100 CA3100E
Contextual Info: CA3100 fü HARRIS S E M I C O N D U C T O R 38M Hz, Operational Amplifier November 1996 Features Description • H ig h O p e n L o o p Gain at V i d e o F r e q u e n c i e s . 4 2 d B T y p at 1 M H z The CA3100 is a large signal wideband, high speed

Contextual Info: HOLTEK r r HT815D0 11.2 Second LOG-PCM Speech Features • • • • • • • • • • • • O perating voltage: 2.4V~5.0V D irectly drives an external tran sisto r Low standby current l|lA typ. for VDD=3V M inim al external com ponents 508 words tab le ROM for key functions

fn720

Contextual Info: UNITRODE CORP »£§^347^^3 9347963 U N IT R OD E C ORP 92D 10750 0D1Q7S0 r v POWER MOSFET TRANSISTORS UFN720 UFN721 UFN722 UFN723 400 Volt, 1.8 Ohm N-Channel F EATU RES • C om pact Plastic Package • Fast S w itching • Low Drive Current • Ease of Paralleling