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    AUDIO TRANSISTOR 5W Search Results

    AUDIO TRANSISTOR 5W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AUDIO TRANSISTOR 5W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    AD1990

    Abstract: AD1992 AD1994 AD1996 AD1994ACPZ 12v 40W stereo amplifier resistor 10K 5w 5v 5W mono AMPLIFIER
    Text: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω


    Original     		PDF AD1990/AD1992/AD1994/AD1996 AD199x CP-64 PSOP-36 AD199x PR05380-0-1/05 AD1990 AD1992 AD1994 AD1996 AD1994ACPZ 12v 40W stereo amplifier resistor 10K 5w 5v 5W mono AMPLIFIER

    PSOP-36

    Abstract: AD199x 12v 40W mono amplifier 12v 4 channel AUDIO power AMPLIFIER AD1990 AD1992 AD1994 AD1996 5w stereo amplifier chip AD1994ACPZ
    Text: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω


    Original     		PDF AD1990/AD1992/AD1994/AD1996 AD199x CP-64 PSOP-36 AD199x PR05380-0-1/05 PSOP-36 12v 40W mono amplifier 12v 4 channel AUDIO power AMPLIFIER AD1990 AD1992 AD1994 AD1996 5w stereo amplifier chip AD1994ACPZ

    a1359

    Abstract: 2sa1359 2SC3422
    Text: 2SA1359 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SC3422.


    Original     		PDF 2SA1359 2SC3422. a1359 2sa1359 2SC3422

    C3422

    Abstract: 2SC3422 2SA1359
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


    Original     		PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359

    C3422

    Abstract: 2SC3422 2SA1359
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


    Original     		PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359

    A1359

    Abstract: 2SA1359 2SC3422 2SA1359 COMPATIBILITY TRANSISTOR
    Text: 2SA1359 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SC3422.


    Original     		PDF 2SA1359 2SC3422. A1359 2SA1359 2SC3422 2SA1359 COMPATIBILITY TRANSISTOR

    c3422

    Abstract: No abstract text available
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


    Original     		PDF 2SC3422 2SA1359. c3422

    C3422

    Abstract: 2SC3422 2SA1359 C342-2
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


    Original     		PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359 C342-2

    A1359

    Abstract: No abstract text available
    Text: 2SA1359 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SC3422.


    Original     		PDF 2SA1359 2SC3422. A1359

    40w bass amplifier using a 12v dc supply

    Abstract: 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM la4630n LA4360 LA4360N 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM BTL audio 50W
    Text: Ordering number : ENN3227E Monolithic Linear IC For Radio Cassette Recorders LA4630N 9V/12V 3-Dimension Power Amplifier Features • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NF-capacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power


    Original     		PDF ENN3227E LA4630N V/12V 40w bass amplifier using a 12v dc supply 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM la4630n LA4360 LA4360N 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM BTL audio 50W

    LA4360N

    Abstract: LA4630 LA4630N LA4360 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM 405BTL SIP18H 40w bass amplifier using a 12v dc supply 0.033uF N1003
    Text: Ordering number:ENN3227B Monolithic Linear IC LA4630N 9V/12V 3-Dimension Power IC for Radio Cassette Recorders Features Package Dimensions • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NFcapacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power


    Original     		PDF ENN3227B LA4630N V/12V 109A-SIP18H LA4630N] LA4360N LA4630 LA4630N LA4360 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM 405BTL SIP18H 40w bass amplifier using a 12v dc supply 0.033uF N1003

    Untitled

    Abstract: No abstract text available
    Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


    OCR Scan     		PDF MH8100F MH8100F 300/xS,

    MICRO ELECTRONICS ltd transistor

    Abstract: No abstract text available
    Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


    OCR Scan     		PDF MH8100F MH8100F May-96 MICRO ELECTRONICS ltd transistor

    transistor 40409

    Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40409 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361

    transistor BC142

    Abstract: BC142 BC143 bc143 transistor
    Text: BC142 GENERAL DESCRIPTION : The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can


    OCR Scan     		PDF BC142 BC143 i42-BC143 200mA Ic-10mA Ic-100mA 500mA Ic-50mA transistor BC142 bc143 transistor

    bc142 transistor

    Abstract: BC142 bc143 transistor bc143 transistor BC143 142-BC143
    Text: MICRO GENERAL DESCRIPTION ; The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can


    OCR Scan     		PDF BC142 BC142 BC143 -142-BC143 20ffiA 200mA 100mA 500mA bc142 transistor bc143 transistor transistor BC143 142-BC143

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 300W TRANSISTOR AUDIO AMPLIFIER 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323

    40632

    Abstract: 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40632 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320

    S2520

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 5 ^ R 1 3 7 5 mm h it • mm m mm Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 + 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC - —2A, IB ——0.2A) High Power Dissipation \ P^ —2-5W (Tc —25°C)


    OCR Scan     		PDF 2SB1375 2SD2012 S2520

    BA5413

    Abstract: BA8221AN BA527 BA3529FP DIP18 BA3528FP BA8221 BA3518F SIP-M12 ba3506
    Text: RDNm 1 Part No. Supply voltage range V 7 BA8221AN 12 Feature Package 2ch transistor array of level control with desable pin. SIP8 •L in e amplifier Part No. Application Radio cassette Car audio recoraw Number of circuit Gvc (dB) BA3t14 • ■ 2 20 BA3118L


    OCR Scan     		PDF BA8221AN BA3t14 BA3118L ZIP18 BA3506A/AF BA3513AF/AFS BA3516/F BA3518/F BA3519F/FS BA3520/F BA5413 BA8221AN BA527 BA3529FP DIP18 BA3528FP BA8221 BA3518F SIP-M12 ba3506

    transistor D401

    Abstract: GS2013 GS2053 transistor TO220 GS2013 H GoldStar GS2052 GS2014 D401 GS2012
    Text: COMMERCIAL TRANSISTOR GOLDSTAR TECHNOLOGY INC/ T3 DE j 4 0 2 Û 7 5 7 □ □ □ 0 0 1 4 ? | D T"“ ^ ¿>7 □ TO-220 TYPE MEDIUM POW ER TR FOR B/W,CTV,MONITOR & AUDIO/VIDEO EQUIPMENT • Medium Power TR PAKCAGE DEVICE APPLICATION MAXIMUM RATINGS AND VCBO VcEO VEBO


    OCR Scan     		PDF O-220 GS2012 GS2013 O-220, GS2014 GS2017 transistor D401 GS2053 transistor TO220 GS2013 H GoldStar GS2052 D401

    BFY 52 transistor

    Abstract: BFY50 BOX69477 022deg BFY 39 transistor
    Text: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR MICRO EL.ECTRDNIC5 MECHANICAL OUTLINE APPLICATIONS FEA TU R ES • Low Satu ratio n V o lta g e VcE *afc * • •0 .5 V typ @ IA • Audio A m p lifier O u tp u t Stag e


    OCR Scan     		PDF IN/11 80Vmin BFY50 i50mA BOX69477 BFY 52 transistor 022deg BFY 39 transistor

    2SD1296

    Abstract: No abstract text available
    Text: 2SD 1296 2SD1296 I S I P N X fc° $ +• is ~j* V N PN Silicon Epitaxial Darlington Transistor $ ¥ — XJ > V > & m ) y IJ 3 V F 7 lx4'yT> 7m Audio Frequency Power Amplifier Low Speed High Curreut Switching Industrial Use i i f f l ^ » H / P A C K A G E D IM E N S IO N S


    OCR Scan     		PDF 2SD1296 2SD1296