MC33389ADW
Abstract: CIRCUIT SCHEMATIC CAR ECU HSOP20 schematic diagramm 35 kV high voltage area detector PV216 c5v2 MC33388 MC33389 MC33389ADH MC33389CDW
Text: Order Number: MC33389/D Rev 3.4, 1st Aug02 MOTOROLA Semiconductor Technical Data Advance Information MC33389 System Basis Chip with Low Speed Fault Tolerant CAN AUTOMOTIVE SBC SYSTEM BASIS CHIP The MC33389 is a monolithic integrated circuit combining many functions
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MC33389/D
Aug02
MC33389
MC33389
100mA
200mA
125kBaud
MC33389ADW
CIRCUIT SCHEMATIC CAR ECU
HSOP20
schematic diagramm 35 kV high voltage area detector
PV216
c5v2
MC33388
MC33389ADH
MC33389CDW
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GE C20C
Abstract: SWCR10 KCL01 SWT7 GE Transient Voltage Suppression SO28W
Text: Order Number: MC33389/D Rev 3.4, 1st Aug02 MOTOROLA Semiconductor Technical Data Advance Information MC33389 System Basis Chip with Low Speed Fault Tolerant CAN AUTOMOTIVE SBC SYSTEM BASIS CHIP The MC33389 is a monolithic integrated circuit combining many functions
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MC33389/D
Aug02
MC33389
MC33389
100mA
200mA
125kBaud
SG1002/D
SG187/D
MC33389ADHR2
GE C20C
SWCR10
KCL01
SWT7
GE Transient Voltage Suppression
SO28W
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SED 1704
Abstract: cygnal F311 C8051F310 C8051F311 CIP-51 LQFP-32 25MIPS C8051F310 pin diagram
Text: Preliminary C8051F310/1 16K ISP FLASH MCU Family ANALOG PERIPHERALS - 10-Bit ADC • Up to 200 ksps • Up to 21 or 17 External Single-Ended or Differential - Instructions in 1 or 2 System Clocks - Up to 25 MIPS Throughput with 25 MHz Clock - Expanded Interrupt Handler
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C8051F310/1
10-Bit
512-byte
CIP-51
MCS-51
B-100
DS009-1
AUG02
SED 1704
cygnal F311
C8051F310
C8051F311
LQFP-32
25MIPS
C8051F310 pin diagram
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9S12XEP100
Abstract: DELAY code for MC9S12XEP100 S12XMPUV1 9S12XEP768 9S12XE S12XMMCV4 ADC12B16C example MC9S12XEP100 MC9S12XE100 9S12x
Text: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.02 11/2006 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC9S12XEP100
MC9S12XE
HCS12
9S12XEP100
DELAY code for MC9S12XEP100
S12XMPUV1
9S12XEP768
9S12XE
S12XMMCV4
ADC12B16C
example MC9S12XEP100
MC9S12XE100
9S12x
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Untitled
Abstract: No abstract text available
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
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BSM200GAL120DN2
Abstract: BSM300GA120DN2 C67070-A2301-A70 diode chopper
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
BSM200GAL120DN2
BSM300GA120DN2
C67070-A2301-A70
diode chopper
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transistor marking BMs
Abstract: No abstract text available
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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BGA427
25-Technologie
VPS05605
EHA07378
OT343
transistor marking BMs
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5V40V
Abstract: No abstract text available
Text: SGB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGB15N60HS
O-263AB
Q67040-S4535
P-TO-263-3-2
O-263AB)
SGB15N60HS
Aug-02
5V40V
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Untitled
Abstract: No abstract text available
Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB06N60HS
O-263AB
Q67040-S4544
P-TO-263-3-2
O-263AB)
SKB06N60HS
Aug-02
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P75N02LS
Abstract: *75n02
Text: P75N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P75N02LS
O-263
P75N02LS"
AUG-02-2001
P75N02LS
*75n02
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BSM200GAL120DN2
Abstract: BSM300GA120DN2 C67070-A2301-A70
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
BSM200GAL120DN2
BSM300GA120DN2
C67070-A2301-A70
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SGW30N60HS
Abstract: SGP30N60HS
Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP30N60HS
SGW30N60HS
P-TO-220-3-1
O-220AB)
P-TO-247-3-1
O-247AC)
O-220AB
Q67040-S4500
SGW30N60HS
SGP30N60HS
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SKW20N60HS
Abstract: No abstract text available
Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKW20N60HS
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4502
Aug-02
SKW20N60HS
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P55N02LS
Abstract: No abstract text available
Text: P55N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 10mΩ 60A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P55N02LS
O-263
P55N02LS"
AUG-02-2001
P55N02LS
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02T02
Abstract: No abstract text available
Text: TZMB. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization
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RthJAx300K/W
D-74025
-Aug-02
02T02
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NCP4115
Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
Text: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W
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SGD503/D
NCP1450
NCP1550
CS5211
CS5212
NCP1570
NCP1571
200ve
r14525
ONS80126-10
NCP4115
NCP4100
200v npn 3a d2pak
Bipolar Power Transistor Data
400V igbt dc to dc buck converter
12V to 300V dc dc converter step-up
NCP1650
NCP1204
DL135
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SOT 23 CODE MCS
Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Text: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor
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Q62702-F940
OT-23
Aug-02-1996
500MHz
SOT 23 CODE MCS
transistor marking MCs
Q62702-F940
bfs 11
SOT 23 marking MCS
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marking r4 SOT343
Abstract: BGA427
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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BGA427
25-Technologie
VPS05605
EHA07378
OT343
Aug-02-2001
marking r4 SOT343
BGA427
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100-10L
Abstract: gsm signal amplifier circuit diagram LMV243 gsm analog converter cell phone detector 100-10L B2 gsm antenna pcb PCB GSM ANTENNA LDC15D gsm 100l
Text: 211026_App. Brief #122_4.qxd 12/18/02 3:18 PM Page 1 A Multi-Band GSM/GPRS Power Amplifier Controller Application Brief 122 Barry Yuen As shown in Figure 1, the LMV243 consists of a 45 dB log amp detector for sensing the RF output power level of a PA and an error amplifier to close
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LMV243
com/pf/LM/LMV243
com/nationaledge/aug02/LMV243
com/appinfo/amps/lmv243
100-10L
gsm signal amplifier circuit diagram
gsm analog converter
cell phone detector
100-10L B2
gsm antenna pcb
PCB GSM ANTENNA
LDC15D
gsm 100l
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ua 180
Abstract: marking NEs
Text: BF2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF2030
VPS05178
EHA07461
OT143
Aug-02-2001
ua 180
marking NEs
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SKB15N60HS
Abstract: No abstract text available
Text: SKB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKB15N60HS
O-263AB
Q67040-S4543
P-TO-263-3-2
O-263AB)
SKB15N60HS
Aug-02
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KT001140
Abstract: KTS01141 2 bimetal thermostat 6A-11
Text: SENT BY: B J ENCLOSURES; 01730280944; 1 -AUG-02 13:55 ; PAGE 3 /3 t>U 5 ' S r U - 0 ] . Llatge setting range • Small size i Simple to mount I High switching performance Heating Cooling KT001140: Thermostat (normallydosed contact breaker for regulating heaters«
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1-AUG-02
0-60T
KT001140:
KTS01141:
KT001140
KTS01141
2 bimetal thermostat
6A-11
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schematic rj45
Abstract: No abstract text available
Text: RoHS Compliance MATERIAL: . HOUSING—PBT POLYESTER U L94V-0 MIXED GLASS FIBER. STANDARD COLOR-BLACK. . CONTACTS—0 .35m m THICK PHOS-BRONZE PLATED WITH 3 0 u ” HARD GOLD AND GOLD FLASH IN SOLDER AREA. •SH IELD -0.25m m TIHCK COPPER ALLOY, PLATED WITH NICKEL.
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UL94V-0
JUN-24
AUG-01
AUG-02
schematic rj45
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Untitled
Abstract: No abstract text available
Text: THIS D R A WI N G IS UNPUBLISHED. C OR Y RI G HT I 9 9 9 RELEASED BY TYCO ELECTRONICS CORPORATION F OR ALL PUBLICATION RIGHTS REV I S IONS D I ST L OC CAD RESERVED. AP [PrgEj DO NOT REVISE EXCEPT BY CAD LTR DESCRIPTION DWN DATE R E D R A W BY CAD EC-435/99
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EC-435/99
9SEP99
AUG02
29SEP99
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