AUG26 Search Results

radsok

Contextual Info: A B C D E H G F REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 13513 AUG26/09 K.L. 47.55 1.872 1 1 "LAST MAKE" SIGNAL CONTACT 29.26 1.152 SIGNAL CONTACT SIZE 20 FLOATING EYELET ASSEMBLY WITH 0.25 [.010] VERTICAL & RADIAL FLOAT 2.74 TYP.

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t ic : o- o- X F M R S YYWW XF7117-VPM 3. Electrical Specifications: Ind uctance: 7 1 . 1 u H ± 2 D % CL @ 10K H z, Ind uctance: 4 1 . 5 9 u H ± 2 0 % in Lead Did.: 0.023 CM ID O m V @ 10KH z, 1 0 0 m V , 3.4 A d c

Contextual Info: 8 7 4 5 6 3 2 1 REVISIONS D REV DESC RIPTIO N DATE A PROPOSAL AUG27/09 B PROPOSAL MAY 6'11 APPRD J.SI D SFP+ PRESS FIT CAGE 16.26 14.50 C C 8.95±0.15 TYP. MATERIAL: 11.26 9.65 CAGE: COPPER ALLOY. B B PLATING: PLATING OPTION 2: 2.54 µm[100 µ"] NICKEL PLATING.

T5D-52

Abstract: t50-52
Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t ic : o-#22 AWG or Equal 23T o- D.650±0.D1 0 CORE: T5D-52 XFMRS YYWW 3. Electrical XFQ156-VPM Specifications: Inductance: 16.8uH±2D% @100KHz, 10mV Inductance: 14.8uH±20% @100KHz, 10mV, 5.0Adc

diode a4s

Abstract: BAV70 BAV70S free pdf transistor a4s A4s diode a4s sot23 BAV70U bav70 transistor transistor BAV70 SC75
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U $ ! " # , ! ,  , " ,  Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W ,   , ! Package