AV 29 TRANSISTOR Search Results

hx8250a

Abstract: HX8678A JIS-K5600 lcd 10.1 Himax touch screen Himax and TOUCH and SCREEN touch panel pin assignment Termination Pin Diagram for Liton Power Supply HX8250 HX8678-A
Contextual Info: Messrs. Product Specification Model: MTF-TV57NP721-AV Rev. No. Issued Date. Page. C Feb .12, 08 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TV57NP721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan

MTF-TQ57SN721-AV

Abstract: lcd 10.1 MIL-STD-105e 320RGB HX8615A HX8218 Himax touch screen MTFTQ57SP721-AV Himax 68 MTF-TQ57SP721-AV
Contextual Info: Messrs. Product Specification Model: MTF-TQ57SN721-AV Rev. No. Issued Date. Page. A Aug.14, 07 1 / 29 LIQUID CRYSTAL DISPLAY MODULE MODEL: MTF-TQ57SN721-AV Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan

Contextual Info: 19-3483; Rev 0; 11/04 KIT ATION EVALU LE B A IL A AV Dual PCI Express, Hot-Plug Controller Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5946AETX -40°C to +85°C 36 Thin QFN MAX5946LETX -40°C to +85°C 36 Thin QFN TOP VIEW 36 35 34 33 32 31 30 29 28

Contextual Info: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

350N06L

Abstract: DIODE D29 IPD350N06L F29 SMD d29 smd
Contextual Info: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated

350n06l

Abstract: DIODE D29 diode d29-08 d29 smd GSV102 diode d29-08 12
Contextual Info: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated

BLF888

Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance

BLF6G22LS-100

Abstract: RF35 TRANSISTOR SMD BV
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

DIODE D29

Abstract: 350N06L d29 diode case d29 IPD350N06L PG-TO252-3-11 F29 SMD d29 smd
Contextual Info: IPD350N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS on ,max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated

Contextual Info: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Contextual Info: BLP7G07S-140P Power LDMOS transistor Rev. 3 — 29 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal

Contextual Info: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

SmD TRANSISTOR a41

Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

BLF6G22LS-100

Abstract: RF35
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

mitsubishi dc motor control

Abstract: simple circuit motor forward reverse control diagram 100PF M61018GP BF119
Contextual Info: MITSUBISHI<AV COMMON> M61018GP PRELIMINARY MOTOR DRIVER FOR CAMERA DESCRIPTION VCH VDD CT VREF NC VAF VWL2 SGND PIN CONFIGURATION M61018GP is a semiconductor integrated circuit built-in motor driver for compact camera. All power transistors which have been used as external parts so

Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information

motorola transistor 2N2907A

Abstract: a201 ic transistor av 29 transistor
Contextual Info: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application

BLV935

Abstract: ferroxcube 4322 ferroxcube tx
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile

3N06L13

Abstract: ANPS071E IPD50N06S3L-13 PG-TO252-3-11
Contextual Info: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature

DIODE D29 -08

Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

PN06L13

Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
Contextual Info: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature