AV VD EC NU Search Results

DRA03TE

Abstract: DRA03T DRA03TB DRA03TC DRA03TG T092
Contextual Info: Ordering number : EN1881A I SA\YO DRA^T N0.I88IA Silicon Plan ar Type i 0.3A Reverse Blocking Thyristor Features •Low-power switching and control •Sm all size and light weight ■Peak OFF-state reverse voltage : —100 to —600V •Average ON-state cu rren t: 0.3A

DE-15 male connector

Abstract: macromelt EDENE
Contextual Info: Godkännande: Beröringsfri säkerhetsgivare Eden Inkoppling av Eden till Pluto Non-contact safety sensor Dörrar och luckor Positionsavkänning Sektoravkänning Doors and hatches Position control Sector detection Slot detection Features: Fördelar: 13 ± 2

2N6342A

Abstract: 2N6343A 2N6345A 2N6346A 30367 2N6344A 2N6347A 2N6348A 2N6342A-2N6349A JC22
Contextual Info: G E SOLID STATE □1 01E 17756 3875081 G E SOLID STATE File Number D E | 3fi750Al 0D177SL 4 D T - _ Triacs 1084 2N6342A-2N6349A Series 12-A Silicon Triacs TERMINAL DESIGNATIONS For Pow er Control and Pow er-Sw itching Applications

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. LCM-H12864GSF/R-Y A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 9 . 4 .1 9 .0 7 P IXEL DETAIL 0 .4 8 • 1 3 .2 0 [0 .0 1 9 ] [0 .5 2 0 ] 8,60 [0 ,3 3 9 ] ■ 1.60 [0 .0 6 3 ] 0,04 [0,002] BLOCK DIAGRAM

025339

Abstract: LT 428 BP107 T820 PGM-16
Contextual Info: T820 900A WHUERBC Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 900 Amperes Average 1600 Volts T820 900A Phase Control SCR

SCR-800

Abstract: powerex T9G BP107 C702 P-154
Contextual Info: T9K7 800A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h d S G C O tltr O l Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 . . SCR 800 Amperes Average 4500 Volts T9K7 800A Phase Control SCR

f8g4

Abstract: SF8G48 SF8J48 USF8G48 USF8J48
Contextual Info: TOSHIBA SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Vd r m Repetitive Peak Reverse Voltage VRRM • Average On-State Current ï t a v =

SF8J41

Abstract: SF8G41 SF8G41A SF8J41A
Contextual Info: TO SHIBA SF8G41 A #SF8J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF8G41A, SF8J41A Unit in mm MEDIUM POWER CONTROL APPLICATIONS. • y= 10.3MAX. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d rm • Average On-State Current : T AV = 8A

Contextual Info: ST083SPbF Series Vishay High Power Products Inverter Grade Thyristors Stud Version , 85 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance • Compression bonding • Compliant to RoHS directive 2002/95/EC

MARKING CODE CGK

Abstract: FS0402
Contextual Info: FS04.A SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V TO92 FEATURES • Glass/passivated die junctions 2 3 • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

scr bt 106

Abstract: A 68064 131-6 scr prx scr SCR 131-6 MV 3581 45800 prx scr 200v prx scr 170 scr To 202
Contextual Info: 72=1^21 DDDbS3D TTß « P R X TC20 2800A Powerex, Inc., 200 W ills Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P t lB S B C o n t r o l Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 nnnn . . POW E RE X INC

B1299

Abstract: AB14 MD10 SED1351 B-1299
Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. LCM — H 3 2 0 2 4 0 G W F /E A E.C.N. A NUMBER AND REVISION COMMENTS /BLOCK DIAGRAM\ CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.5.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. DATE 4 .2 4 .0 7 E.C.N, # 1 1 1 4 8 .

Contextual Info: TOSHIBA SF3000GX22 TOSHIBA ALLOY-FREE THYRISTOR < ; F ^ n n n f i y ? ? Unit in mm HIGH POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V d r m ì av^ vi;i wiy^ * "R û i-iû f i f 1T7Û P q û V P o i r o v o û \ r n l f o îTû « -n t» n r J

Contextual Info: FS16.J INSULATED STANDARD SCR On-State Current 16 Amp INSULATED TO-220AB 1 Gate Trigger Current 2 mA to 40 mA Off-State Voltage 200 V ÷ 800 V FEATURES • Glass/passivated die junctions • Provides voltage insulated tab rated at 2500V RMS • High current SCR

Contextual Info: Si GE C P L E S S E Y OCTOBER 1995 SEMI CO NDUC TOR S DS4255-3.2 TK36 PHASE CONTROL THYRISTOR KEY PARAM ETERS V DRM _ 1200V 245A T AV 5500A 'TS M dVdt* 200V/HS dl/dt 500A/|is APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control.

Contextual Info: ~ 4 ItÉ CS5516 CS5520 mm^mmm àm m K IKK SHF Vk K B m mm am Semiconductor Corporation 16-Bit/20-Bit Bridge Transducer A/D Converters General Description Features • Dynamic Excitation Options The CS5516 and CS5520 are complete solutions for digitizing low level signals from strain gauges, load

prx scr

Contextual Info: 72=1^21 OOGbHSa n b iPRX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Pow»rex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC » b4E -D T820 750A PhdSB COtlttOl SCR ^ mp g re s

DG201A

Abstract: DG202 DG441 DG441DJ DG441DY DG441EJ DG441EY DG442 Dual Supply From Single Battery Source
Contextual Info: DG441, DG442 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches December 1994 Features Description • ON-Resistance 85Ω Max The DG441 and DG442 monolithic CMOS analog switches are drop-in replacements for the popular DG201A and DG202 series devices. They include four independent

pmi mux08

Abstract: MUX pmi pmi mux 08 pmi sw 01
Contextual Info: pm! M UX-08/883 8 -CHANNEL/DUAL 4 -CHANNEL JFET ANALOG MULTIPLEXER OVERVOLTAGE AND POWER SUPPLY LOSS PROTECTED) P r e c i s i o n M o n o l i t h i c s Inc. 1.0 SCOPE This specification covers the detail requirements for a monolithic eight-channel JFET analog

Contextual Info: VSKJS209/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A minimized number of interfaces. FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance

2N4444 equivalent

Abstract: 2N4441 2N4444 2N4443 2N4442 thyristor BT 200 2N4441 Motorola 2n4443 equivalent motorola thyristor 339 BT thyristor
Contextual Info: MOTOROLA SC {DIODES/OPTO} 6367255 MOTOROLA Öl SC <D IO D E S I O P T O DE | b3t.7SS5 □□7fl1b4 0 f~ 0 1E 78964 D T ~ 2,r - tsr 2N4441 thru S ilic o n C on trolle d Rectifiers 2N 4444 Reverse B lockin g Triode Thyristors . designed for high-volume consumer phase-control applications such as motor

1CGK

Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

e1 marking

Abstract: FS0102DL 1CGK
Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

1CGK

Abstract: FS0102DL
Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop