AVALANCHE PHOTO DIODES Search Results

avalanche 1550nm photodiode 5 Ghz

Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.

Contextual Info: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors

PD8043

Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

PD8042

Abstract: PD893D2 PD8932 PD893D
Contextual Info: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

mitsubishi APD

Abstract: PD8* APD TIA AGC application note Photo Diodes PD839A4 photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm
Contextual Info: MITSUBISHI PHOTO DIODES PD839A4 InGaAs AVALANCHE PHOTO DIODES PD839A4 Feature DESCRIPTION PD839A4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical

mitsubishi APD

Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
Contextual Info: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical

avalanche diode

Abstract: Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz PD8042 Avalanche diodes ir photodiode wavelength
Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 DISCRIPTION FEATURES PD8XX2 is an InGaAs avalanche photodiode suitable for • Active diameter 50µm receiving the light having low noise, a wavelength band of • Low

photo diode

Abstract: 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode
Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • φ35 µ m active diameter a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving

diode code m10

Abstract: avalanche photodiodes 1650nm APD 10ghz
Contextual Info: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area

HIGH VOLTAGE DIODE kv

Abstract: C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode
Contextual Info: HPD HYBRID PHOTO-DETECTOR MODULES H8236-07, -40 PRELIMINARY DATA OCT. 2000 PATENT PENDING The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 50><m suitable for receiving the light having low noise, a wavelength band ot • L o w noise

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 5 0 /im suitable for receiving the light having low noise, a wavelength band of • L o w noise

mitsubishi avalanche photodiode ingaas ghz

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise

InGaAs Photodiode 1550nm

Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550
Contextual Info: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to

1550nm photodiode 5 Ghz

Abstract: 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933
Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • 035 a • L o w noise s e n s itiv e receiving the area of 035 light having fim , PD 8X X 3 a wavelength

Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having

InGaAs Photodiode 1550nm

Contextual Info: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has • d>35 /i m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

16-TQFN-EP

Abstract: GRM155R71C104KA88 GRM155R61A105KE15 BAT46W DIODE 100V BAT46W-7-F GCM21BR72A104KA37L GRM155R71E103KA01D GCM21BR ME3220-472MLB murata 0402 footprint
Contextual Info: Maxim > App Notes > Power-Supply Circuits Keywords: Avalanche Photo Diode bias, boost converter Mar 31, 2009 APPLICATION NOTE 4374 Power Supply and Accurate Current Monitor for Avalanche Photodiode APD Biasing Applications By: Subbarami Reddy Abstract: This reference design presents a circuit for addressing the power-supply and current-monitoring

Contextual Info: new pulse laser diode 905 nm, 75 W pulse laser diode 5 mm epoxy package data sheet new avalanche photo diodes APD230 APD500 data sheets associated links laser diode modules laser diodes LEDs optics price list ROITHNER LASERTECHNIK GmbH Wiedner Hauptstrasse 76, Vienna, Austria

l5506

Abstract: NDL55 avalanche photodiodes
Contextual Info: N E C ELECTRONICS INC b2E » • b427525 003fil3b 3T7 ■ NECE DATA SHEET NEC LASER DIODES N D L5520P , N D L5520P1 ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COM M UNICATIONS 0 5 0 //m InGaAs AVALANCHE PHOTO DIODE M M F MODULE DESC R IPTIO N N D L5520P and NDL5520P1 are InGaAs Avalanche Photodiodes especially designed for a detector o f 2.5 Gb/s optical fiber

24V to 48V dc dc converter step-up

Abstract: schematic diagram 48v dc regulator 48v to 5v dc schematic Voltage regulator 0V to 48v GLF1608T4R7M GRM188R60J475KE19D GRM188R71H104KA93D LBMF1608T4R7M MIC2290 VJ0603Y104KXAACW1BC
Contextual Info: Application Hint 63 MIC2290 48V Avalanche Photo Diode APD Application Circuit w/ 0603 Chip Inductor Introduction The MIC2290 is an internally compensated standard stepup switching regulator with an integrated power switch and Schottky diode. The attribute of an internal power switch

PIN APD DIODE

Abstract: GPON APD LT3482 LT1815 PMBT3904 APD, applications, bias supply APD, applications, power supply
Contextual Info: A Complete Compact APD Bias Solution for a 10Gbits/s GPON System – Design Note 447 Xin Qi Introduction Avalanche photo diode APD receiver modules are widely used in fiber optic communication systems. An APD module contains the APD and a signal conditioning

VJ0603Y104KXAACW1BC

Abstract: APD, applications, bias supply LBMF1608 GRM188R71H104KA93D GLF1608T4R7M GRM188R60J475KE19D LBMF1608T4R7M MIC2290 GRM21BR71H474K Avalanche Photo Diode
Contextual Info: MIC2290 APD Evaluation Board 48V Avalanche Photo Diode (APD) Bias Circuit General Description 2. Connect the load to the VOUT (J4) and ground (J5) terminals. The load can be either passive (resistor) or active (electronic load). An ammeter can be placed between