AVALANCHE PHOTODIODE FREE SPACE Search Results
AVALANCHE PHOTODIODE FREE SPACE Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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54AC377/SSA |
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54AC377/SSA - Dual marked (M38510/75603SSA) - SPACE-LEVEL LOGIC |
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54ACT151/SFA-R |
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54ACT151/SFA-R - Dual marked (5962R8875601SFA) - SPACE-LEVEL LOGIC |
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100331/VYA |
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100331 - 100K Series, Low Power Triple D-Type Flip-Flop - Dual marked (5962-9153601VYA) - SPACE-LEVEL LOGIC |
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CY7C006A-20AXI |
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16KX8 DUAL-PORT SRAM, 20ns, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-64 |
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AVALANCHE PHOTODIODE FREE SPACE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IAE080X
Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR InGaas PIN photodiode, 1550 sensitivity
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Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical |
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Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The |
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264-339757-VAR 264-339757-VAR 12-lead 1000-1600nm 200um Opto757-VAR | |
Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited |
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IAG 080
Abstract: photodiode ingaas ghz
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Contextual Info: Detectors Only available on request! InGaAs Avalanche Photodiode IAE-Series Description The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally |
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Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited |
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inGaAs photodiode 1550Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at |
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IAE080X
Abstract: InGaas PIN photodiode, 1550 sensitivity IAE200X iae200 rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
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Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at |
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IAG 080Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at |
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Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at |
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
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photodiode InGaAs NEPContextual Info: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier |
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12-lead 200um] Opto769-101 photodiode InGaAs NEP | |
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Contextual Info: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback |
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264-339794-VAR 12-lead 500-1050nm 500um, 200um, Opto794-VAR | |
Contextual Info: Pigtailed InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 276-339761-000 Description CMC Electronics’ 264-339761-000 uses an InGaAs APD with a GaAs FET frontend transimpedance amplifier in a DIL-14 package. The InGaAs APD has a low ionization ratio for lower shot noise. The |
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DIL-14 1000-1600nm Opto761-VAR | |
PerkinElmer tr 1700
Abstract: PerkinElmer Avalanche Photodiode
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12-lead DTS0108P PerkinElmer tr 1700 PerkinElmer Avalanche Photodiode | |
SILICON APD Pre-AmplifierContextual Info: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal |
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264-339795-VAR 12-lead 550-1050nm Opto795-VAR SILICON APD Pre-Amplifier | |
photodiode 1550nm nepContextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input |
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264-339759-VAR 12lead 200um] 200um, Opto759-VAR photodiode 1550nm nep | |
JDSU ERM
Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
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ERM578LMX 498-JDSU 5378-JDSU JDSU ERM avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550 | |
receiver avalanche 1550 fiber 2.5Contextual Info: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe |
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
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CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E | |
Si apd photodiode
Abstract: APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector
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SD012-44-62-221 SD012-44-62-221 Si apd photodiode APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector | |
Light Detector laser
Abstract: short distance measurement ir infrared diode
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KOTH0001E15 Light Detector laser short distance measurement ir infrared diode |