AVALANCHE TRANSISTORS Search Results

AVALANCHE TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

AVALANCHE TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,	OCR Scan	BUZ11 BUZ11FI BUZ11 O-220 ISOWATT220	PDF
BUZ72A Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	BUZ72A 100oC 175oC O-220 BUZ72A	PDF
STD4N25 Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	STD4N25 100oC O-251) O-252) STD4N25	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable ott-state characteristics	OCR Scan	PHP2N50E, PHB2N50E, PHD2N50E PHP2N50E T0220AB)	PDF
BUZ72A Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	BUZ72A 100oC 175oC O-220 BUZ72A	PDF
AVALANCHE TRANSISTOR Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors Contextual Info: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features	Original	ZTX413 ZTX413 ZTX413, ZTX415 FMMT415 FMMT417 ED-14, DN24-1 AVALANCHE TRANSISTOR 4N7 CAPACITOR DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors	PDF
STD4N25 Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	STD4N25 100oC O-251) O-252) O-251 STD4N25	PDF
STD4N25 Contextual Info: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	STD4N25 100oC O-251) O-252) STD4N25	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PHP2N50E, PHB2N50E, PHD2N50E PHP2N50E T0220AB) PHB2N50E OT404	PDF
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching	OCR Scan	PHB9N60E, PHW9N60E OT429 T0247)	PDF
N50E Abstract: PHP12N50E TRANSISTOR N50E Contextual Info: Product specification Philips Semiconductors PowerMOS transistors PHP12N50E Avalanche energy FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PHP12N50E PHP11N50E T0220AB) PHP12N50E T0220) N50E TRANSISTOR N50E	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PHP7N60E, PHB7N60E, PHW7N60E PHP7N60E T0220AB) OT429 T0247)	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics	OCR Scan	PHP8N50E, PHB8N50E, PHW8N50E PHP8N50E PHW8N50E	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics	OCR Scan	PHP6ND50E, PHB6ND50E	PDF

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy FEATURES QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PHP7N60E, PHB7N60E, PHW7N60E PHP7N60E T0220uotation	PDF
BUZ11A Contextual Info: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	BUZ11A 100oC 175oC O-220 BUZ11A	PDF
IRF620FI equivalent Abstract: IRF620 IRF620FI Contextual Info: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620FI equivalent IRF620 IRF620FI	PDF
circuit diagram irf520 Abstract: GC233 Contextual Info: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	IRF520 IRF520FI IRF520FI O-220 ISOWATT220 IRF520/FI GC2339G GC20260 GC20270 circuit diagram irf520 GC233	PDF
IRF620 Abstract: EQUIVALENT IRF620FI transistor irf620 IRF620FI Contextual Info: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620 EQUIVALENT IRF620FI transistor irf620 IRF620FI	PDF
BUZ10 Contextual Info: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	BUZ10 100oC 175oC O-220 BUZ10	PDF
BUZ10 Abstract: buz10 MOROCCO Contextual Info: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO	PDF
BUZ72A Abstract: BUZ72A DATASHEET thomson tr 62 Contextual Info: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE	Original	BUZ72A 100oC 175oC O-220 BUZ72A BUZ72A DATASHEET thomson tr 62	PDF
B 1449 transistor Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics	OCR Scan	PHP3N50E, PHB3N50E PHP3N50E T0220AB) PHB3N50E B 1449 transistor	PDF
TO218 package Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package Contextual Info: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	IRFP240 IRFP240FI FP240 FP240 FP240FI 15racteristics IRFP240/H IRFP240/FI TO218 package irfp240 circuit diagram IRFP240FI TO-218 Package	PDF

AVALANCHE TRANSISTORS Search Results

AVALANCHE TRANSISTORS Result Highlights (5)

AVALANCHE TRANSISTORS Datasheets Context Search

BUZ72A

STD4N25

BUZ72A

AVALANCHE TRANSISTOR

STD4N25

STD4N25

N50E

BUZ11A

IRF620FI equivalent

circuit diagram irf520

IRF620

BUZ10

BUZ10

BUZ72A

B 1449 transistor

TO218 package