AVANTEK POWER AMPLIFIER Search Results

avantek apt-18646

Abstract: Avantek 6-18
Contextual Info: HP/Avantek 2-18GHz Power Amplifier Replacements DPT-4000’s/6000’s/8000’s/10500’s/12000’s/18600’s Series HP/Avantek 2-18GHz Power Amplifier Replacements without Temperature Compensation DBS Model Number Frequency Response GHz Min. Gain (dB) Gain

AVANTEK transistor

Contextual Info: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:

Contextual Info: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:

Avantek UA-152

Contextual Info: îm n tt 2QE D AVANTEK INC AVANTEK OGObMTS G AT-42085 Up td 6 GHz Medium Power Silicon Bipolar Transistor 'T - S l- Z l Features • • • • • Avantek 85 Plastic Package .020 .51 High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression: .

AVANTEK transistor

Contextual Info: AVANTEK INC 2ÛE D avantek • 11411b&#39;b D00b5S2 Ô ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • Low Noise Figure: 1.4 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

AT12535

Abstract: AT-12535 Avantek S AVANTEK oscillator Avantek amplifier 167
Contextual Info: avantek 50E inc D avantek ATF-25735 AT-12535 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 35 micro-X Package Features • • • • i m n t t ooGbS7s 3 High Output Power: 19.0 dBm typical Pi <jb at 4 GHz High Gain: 12.5 dB typical Gi dB at 4 GHz

atf-25100

Abstract: AVANTEK transistor AVANTEK ATF-25100-GP3 93 40s
Contextual Info: AVANTEK Q INC SOE D im n b h OGDhSbS b ATF-25100 AT-8251 0.5-10 GHz Lôw Noise Gallium Arsenide FET avantek Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz » High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pkjb

at8250

Abstract: AT82 AVANTEK transistor
Contextual Info: AVANTEK O INC 20E J> ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET avantek 'T-'zi-zs Avantek 70 mil Package Features • • • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB

AVANTEK transistor

Abstract: ATF 13284 AVANTEK
Contextual Info: AVANTEK Q INC EGE avantek îm n b b D ooobsso 4 ATF-13284 1*16 GHz Low Noise Gallium Arsenide FET ~T-Z\~Z.£ Avantek 84 Plastic Package Features • • • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

Contextual Info: tw , V». data sheet Q avantek MSA-0504 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Avantek 04 Plastic Package Features • • • • • Cascadable 50 Q. Gain Block High Output Power: 18.0 dBm typical Pi dBat 1.0 GHz

AT8250

Abstract: AT-8250 2-18 GHz Low Noise Gallium Arsenide FET ATF-25170
Contextual Info: AVANTEK Q S OE INC GODbSbfl D 1 ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET avantek ‘T - ' S I - 2 S Avantek 70 mil Package Features • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB

AVANTEK transistor

Abstract: ATF13036-STR
Contextual Info: AVANTEK 5DE INC AVANTEK D • U M lU h 0GGbS4E S ATF-13036 2-16 GHz Low Noise Gallium Arsenide FET Z\-2S Avantek 36 mlcro-X Package1 Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB

ATF13136

Abstract: atf-13136 avantek ATF-13136-TR1 Avantek, Inc 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor Avantek atf-1323
Contextual Info: AVANTEK INC EGE AVANTEK D im n b b OGQbSHb 5 ATF-13136 , 2-16 GHz Low Noise Gallium Arsenide F ET \-ZS Features • • • • • Avantek 36 mlcro-X Package1 Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

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Abstract: 13484 AVANTEK transistor Avantek UA-152
Contextual Info: AVANTEK Q INC 2QE I> lim U b GOQbS SM 1 ATF-13484 avantek 1-16 GHz Low Noise Gallium Arsenide FET ~2>\-ZS Features • • • • • Avantek 84 Plastic Package Low Noise Figure: 1.0 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

Contextual Info: AVANTEK INC MME d m i m i H b b oaoûi3=î UTL-503 Thln-Film Limiting Amplifier 5 to 500 MHz AVANTEK AVA T-iq-<À-o\ FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • Output Power Flatness: ±0.3 dB (Typ • Input Power Range: 13.0 dB • Low Phase Shift Variation

Avantek uto 1504

Abstract: AM/SSC 9500 ic data
Contextual Info: AVANTEK ING M ME D AVANTEK B1 llMlSbb 000000=1 Ô B I A V A UTO/UTC 545 Series Thln-Filrri Cascadable Amplifier 10 to 500 MHz ' T 7 4 - 0 c?'O| FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; +19.0 dBm Typ

avantek

Abstract: Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. AT-64023 Avantek, Inc Avantek S
Contextual Info: AVANTEK I NC 20E D AVANTEK • im n tb GOObSSfl AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor □ * Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:

Contextual Info: AVANTEK MME D INC B AVANTEK U M lU b IAVA 0007=1^ G UTO/UTC 524 Series Thln-Film Cascadable Amplifier 5 to 500 MHz -O T-O t FEATURES APPLICATIONS • Frequency Rangé: 5 to 500 MHz • High Gain: 31.0 dB Typ • Medium Power Output: + 1 7 .0 dBm (Typ)

avantek

Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100 ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
Contextual Info: AVANTEK INC 2GE D • limihb 0GGb544 ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET =1 ' -3.NZS Avantek Chip Outline Features • • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

Avantek amplifier 8 12 GHz

Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
Contextual Info: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

AT12570-5

Abstract: AVANTEK s atf255 AVANTEK oscillator
Contextual Info: EGE D AVANTEK INC ^A V A N TE K im n tb GG0bS7Q T ATF-25570 AT-12570-5 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 70 mil Package Features • High Output Power: 20.5 dBm typical Pi dB at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz

AT82

Abstract: AVANTEK transistor
Contextual Info: AVA N T E K INC SOE D O avantek ATF-25100 AT-8251 0.5-10 GHz Lòw Noise Gallium Arsenide FET 'T-'M-zs Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Contextual Info: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz

Avantek S

Abstract: AVANTEK transistor ATF-20136
Contextual Info: AVANTEK 50E D INC 0AVANTEK • lmiTbb 0 0 0 b S 3 cl S ATF-10736 ATF-20136 0.5-12 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • High Associated Gain: 12.5 dB typical at 4 GHz • Low Bias: V d s = 2 V , I d s = 20 mA • High Output Power: 20.0 dBm typical Pi dB