AVX 100B Search Results

ASJ CR21

Abstract: Diode GEP 53A 93c46m8 D1275 ASJ PTE CR21 ASJ em 483 epson 93c46-m8 Diode GEP 23A D12301
Contextual Info: June 1997 Application Note 65 ML6698 and DEC 21143 Adapter Implementation OVERVIEW The interface between the DEC 21143 and the ML6698 is a mix of digital and analog signals. The DEC 21143’s 5-bit interface connects to the ML6698’s 5-bit interface for 100BASE-TX operation. The ML6698 100BASE-TX

thermistor 100k

Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Contextual Info: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

gsm 900 amplifier

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common–

WB1 SOT23

Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

WB1 SOT23

Abstract: WB2 SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

100B330JW

Abstract: chip resistors 0805 philips MRF9100 esd z10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

100B220GW

Abstract: 100B100GW
Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

EQUIVALENT bts 2140

Abstract: regulator bts 2140
Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for GSM 900 MHz frequency band, the high gain and broadband

MRF9080

Abstract: MRF9080S 08053G105ZATEA
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

08051J5R6BBT

Abstract: j452 cms 920
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

resistor 0805

Abstract: J338
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

WB1 SOT23

Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 sps 953 transistor data
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

motorola 8822

Abstract: IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913 motorola 10116 100A7R5JP150X 6821 motorola MRFG35003MT1
Contextual Info: MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

ATC 1184

Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
Contextual Info: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

u1 voltage regulator

Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

capacitor 0805 avx

Abstract: Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080 MRF9080LSR3 MRF9080R3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband