AX-52 DIODE Search Results

zener diodes 1n2831b

Abstract: 1N5363B 1N3335B CZ5379B CZ5363B CZ5372B 1N2828B 1N5371B CZ5382B 1N5365B
Contextual Info: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3 50 mil* DO-5* ZENER VOLTAGE INDUSTRY STANDARD RECOMMENDED FOR NEW DESIGNS GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE 30 33 36 39 43 45 47 50 51 52 56 60 62 68 75 82

Contextual Info: GERMANIUM TUNNEL DIODE DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. PACKAGE STYLE TO-18 .2 3 0 5 64 -.2 0 9 (5 31! DIA. .1 9 5 (4 95) .1 7 8 <4 52) DIA. T MAXIMUM RATINGS .0 3 0 (0.762) M AX. 500 (iA

1N3326B

Abstract: CZ5372B CZ5379B CZ5363B 1N2828B 1N3004B 1N3350B 1N5363B 1N5365B 1N5367B
Contextual Info: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3* DO-5* ZENER VOLTAGE 30 33 36 39 43 45 47 50 51 52 56 60 62 68 75 82 87 91 100 105 110 120 130 140 150 160 170 175 180 190 200 INDUSTRY STANDARD 1N5363B 1N5364B 1N5365B

5221B

Abstract: 5252 F 1107 5252 F minimelf marking B432-2
Contextual Info: SbE J> m 7 ^ 2 3 7 GG41blS T7 3 M S G T H S i SGS-THOMSON T-//-V/ I G J O T M W i TMM 5221B -> TMM 5271B S G S-THOMSON ZENER DIODES V O L T A G E R A N G E : 2 .4 V T O 100V DESCRIPTION 5 0 0 m W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values

tt 3043

Abstract: TT 3034 zener diodes 1N serie 1N3022
Contextual Info: zener diodes THOMSON-CSF diodes zener Types vzt m in 1w / / 'z t nom V »ZT/'ZT m ax 'Z T m ax «2) Im A ) m ax C2) 3,3 3,1 3,4 3,6 3,7 3,9 4,0 4,3 4,4 4,7 4,8 5,1 5,2 5,6 5,8 6,2 6.4 6,8 7,0 7,5 7,7 8,2 8,5 9,1 10 9,4 10,4 11 12 11,4 12,4 13 13,8 15 15,3

Contextual Info: KflSD HYPERABRUPT U H F /V H F T U N IN G DIODES electronics m e DHA6520, A, B, C, D thru DHA6525, A, B, C, D CATHODE BAND The controlled C-V characteristics of this hyperabrupt tuning diode series facilitate their use in straight line frequency vs voltage applications through

Contextual Info: - LDÌ. Laser Diode Incorporated 2 Olsen Avenue, Edison, N ew Jersey 0 8820 USA Voice: 7 3 2 -5 4 9 -9 0 0 1 , Fax: 7 3 2 -9 0 6 -1 5 5 9 Internet: www.laserdiode.com E-mail: sales@laserdiode.com PINAMP Optical Receiver Modules 52 M b /s, 155 M b /s, 6 2 2 M b /s

ZENER MIO

Abstract: DIACS DO-35 5V1
Contextual Info: rZ 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MM ôm[l(STOM(£S MEDIUM POWER THYRISTORS & TRIACS < 100 A TRIGGER DIODES (DIACS Breakover voltage Breakover voltage sym m etry Breakover current A V betw een 0 and 10 mA min. (V) Package Type m io nom m ax

zener IN 5232

Abstract: 5277A 1N52658
Contextual Info: C T SGS-THOMSON *7 # GENERAL PURPOSE & INDUSTRIAL m m ì& jè w w è s ZENER DIODES PREFERRED SERIES JEDEC SERIES Type STANDARD ZENER DIODES Vz t ' I z t * rZT 1 *2T* 'Z T * rZK 1 'Z K Ir ' V r “ VZ Vr Tam b 25 °C 500 mW / nom m ax V (O) Tgirij) — 75°C Tj max

K004

Abstract: CSIR-2520C CSIR-3528C CSIR-3529C 2520C CSIR2521C
Contextual Info: • INFRARED SMT EMITTING DIODES IS ^ c s i | ■ ^ C a r r o M t o i^ G m ic o n d iic t o ^ C ^ ^ ^ B ELECTRO-OPTICAL CHARACTERISTIC Ta 2mm INFRARED EMITTING DIODES CSIR-2520C WATER CLEAR LENS =25°C CSIR-2521C W ATER CLEAR LENS Item S ym bol R a dian t In te nsity

D200L

Contextual Info: / r 7-=Ei>n.- l^èiÊ^y n — — K Super Fast Recovery Diode Rectifier Module O U T L IN E D IM E N S IO N S D200LC40B 3 "M 4 n u ts 400V 200A U Q2D0LC4GB Uni t ’ mm • ÎÈtëm R A TIN G S Absolute Maximum Ratings S iB sd>7 Item Symbol Storage Temperature

Contextual Info: N AMER PHILIPS/DISCRETE TDD D bb53T 31 0010L iT2 h • BZW 86 S E R IE S T " TR A N S IE N T SUPPRESSO R DIODES A ran g e of diffused silicon diodes in a DO-30 m etal envelope intended for u se in the p r o ­ tectio n of the e le c tric a l and elec tro n ic equipm ent ag a in st voltage tra n sie n ts.

Contextual Info: SILICO N LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provi­ de passive receiver protection low noise amplifiers, mixers, and detectors ,

ZFW MARKING

Abstract: 6V8A zdx 1000 marking zfw SM5Z200A ZFW MARKING CODE ZFG 28 zener zfw Zdw 31 ZFW 3-9
Contextual Info: SbE D • 7 T 2 T 23 7 □□mS'ì'ì TTD ■ S G T H S G S -T H O M S O N EL[i OT(s *S s 6 s-thomson t-im s t S M 5 Z 3 V 3 A -> 2 0 0 A ZENER DIODES N EW S E R IE ■ HIGH SURGE CAPABILITY UP TO : 180W@ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V S U R F A C E M O U N T T R A N S IL F E A T U R E S

diode SG22

Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Contextual Info: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30

Contextual Info: SERIES M and MV MILITARY Hi Reliability Ultra-Miniature Isolated DC-DC Converters -55°C TO + 85°C • Diodes JAN TX • Transformers manufactured to MIL-PRF-27 • Capacitors MIL-C-39003, S Level MIL-C-55681, S Level • Resistors MIL-R -39008, S Level MIL-PRF-39017, S Level

DD 127 D

Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
Contextual Info: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K

d2388

Abstract: D368S EUPEC D 648 S
Contextual Info: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax

BZV 400

Abstract: bzv 06 bzv 400 5v6 k3 bzv 46 bzv 4v7 bzv 40 zener 6v8 CB-210 47c36 ZENER DIODES BZV 40 C 8V2
Contextual Info: zener diodes diodes zener Types THOMSON-CSF Vz t /Iz t * m in m ax V T Z T /'Z T m ax 'Z T ocvz typ Ir /V r m ax Vr •ZM Ci) (m A ) (% /°C ) (nA) (V) (m A ) 2 W / Tamb = 50°C Tj max = 175°C BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47

ZPY 3V9

Abstract: zpy8v2 ZPY*5v6 zpy 4,7 v ZPY10 ZPY11 ZPY7V5 ZPY15 ZPY16 ZPY20
Contextual Info: SbE *?7 ]> • 7=^237 G Ü M lb ia SCS-THOMSON u l ic t ö m « S 7Ô2 ■ SGTH S S-THOMSON T -//-/5 “ ZPY 3V9 —» ZPY 100 ZENER DIODES NEW SERIE ■ VOLTAGE RANGE : 3.9V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values

PL 15 Z

Abstract: zener pl33 PL6V8Z PL22Z PL3V6Z PL-43 PL7V5Z PL30Z PL8V2Z 120Z
Contextual Info: ^ THOMSON-Uw» 59C 0 2 4 9 i ü P L 3V3Z — PL200Z DIVISION SEMICONDUCTEURS ZENER DIODES DIODES ZENER 1,3 W silicon Zener diodes, herm etically sealed plastic according to normalization CC TU : F 126 offering the follow ing advantages : • • Large voltage range : 3 , 3 V to 2 0 0 V

IN5059

Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Contextual Info: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

Contextual Info: rz 7 ^ 7# SGS-THOMSON ^ « IL K S T T O M S B Z M 8 5 C 2 V 7 -> 1 0 0 ZENER DIODES • VOLTAGE RANGE : 2.7V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values Symbol P aram eter V alu e Unit P lo t

ZENER DIODES BZV 40 C 8V2

Abstract: ZENER DIODES BZV 85 8V2 zener 5v6 BZV 400 ZENER DIODES BZV 48 5V1 bzv 41 47C30 ZENER DIODES BZV 48 diode 47c ZENER DIODES BZV 85
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOeGœiLtiCTÔÂBÊS ZENER DIODES STANDARD ZENER DIODES Type Vz t 'Iz t * rZ T ''Z T * 'Z T * “ VZ I r 'V r Vr •ZM P ackage Tam b 7 0 °C m in m ax !2 (V) 2W P P P P P P P P P P P P P P P P P P P P P BZV