zener diodes 1n2831b
Abstract: 1N5363B 1N3335B CZ5379B CZ5363B CZ5372B 1N2828B 1N5371B CZ5382B 1N5365B
Text: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3 50 mil* DO-5* ZENER VOLTAGE INDUSTRY STANDARD RECOMMENDED FOR NEW DESIGNS GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE 30 33 36 39 43 45 47 50 51 52 56 60 62 68 75 82
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DO-201
1N5363B*
1N5364B*
1N5365B*
1N5366B*
1N5367B*
CZ5363B
CZ5364B
CZ5365B
CZ5366B
zener diodes 1n2831b
1N5363B
1N3335B
CZ5379B
CZ5363B
CZ5372B
1N2828B
1N5371B
CZ5382B
1N5365B
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1N3326B
Abstract: CZ5372B CZ5379B CZ5363B 1N2828B 1N3004B 1N3350B 1N5363B 1N5365B 1N5367B
Text: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3* DO-5* ZENER VOLTAGE 30 33 36 39 43 45 47 50 51 52 56 60 62 68 75 82 87 91 100 105 110 120 130 140 150 160 170 175 180 190 200 INDUSTRY STANDARD 1N5363B 1N5364B 1N5365B
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DO-201
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
CZ5363B
CZ5364B
CZ5365B
CZ5366B
1N3326B
CZ5372B
CZ5379B
CZ5363B
1N2828B
1N3004B
1N3350B
1N5363B
1N5365B
1N5367B
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Untitled
Abstract: No abstract text available
Text: GERMANIUM TUNNEL DIODE DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. PACKAGE STYLE TO-18 .2 3 0 5 64 -.2 0 9 (5 31! DIA. .1 9 5 (4 95) .1 7 8 <4 52) DIA. T MAXIMUM RATINGS .0 3 0 (0.762) M AX. 500 (iA
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1N2927
S/250
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5221B
Abstract: 5252 F 1107 5252 F minimelf marking B432-2
Text: SbE J> m 7 ^ 2 3 7 GG41blS T7 3 M S G T H S i SGS-THOMSON T-//-V/ I G J O T M W i TMM 5221B -> TMM 5271B S G S-THOMSON ZENER DIODES V O L T A G E R A N G E : 2 .4 V T O 100V DESCRIPTION 5 0 0 m W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values
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7TETE37
GG41blS
5221B
5271B
500mW
200mA)
7T2T237
5252 F 1107
5252 F
minimelf marking
B432-2
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tt 3043
Abstract: TT 3034 zener diodes 1N serie 1N3022
Text: zener diodes THOMSON-CSF diodes zener Types vzt m in 1w / / 'z t nom V »ZT/'ZT m ax 'Z T m ax «2) Im A ) m ax C2) 3,3 3,1 3,4 3,6 3,7 3,9 4,0 4,3 4,4 4,7 4,8 5,1 5,2 5,6 5,8 6,2 6.4 6,8 7,0 7,5 7,7 8,2 8,5 9,1 10 9,4 10,4 11 12 11,4 12,4 13 13,8 15 15,3
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Untitled
Abstract: No abstract text available
Text: KflSD HYPERABRUPT U H F /V H F T U N IN G DIODES electronics m e DHA6520, A, B, C, D thru DHA6525, A, B, C, D CATHODE BAND The controlled C-V characteristics of this hyperabrupt tuning diode series facilitate their use in straight line frequency vs voltage applications through
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DHA6520,
DHA6525,
L-S-19500
6524D
6523D
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Untitled
Abstract: No abstract text available
Text: - LDÌ. Laser Diode Incorporated 2 Olsen Avenue, Edison, N ew Jersey 0 8820 USA Voice: 7 3 2 -5 4 9 -9 0 0 1 , Fax: 7 3 2 -9 0 6 -1 5 5 9 Internet: www.laserdiode.com E-mail: sales@laserdiode.com PINAMP Optical Receiver Modules 52 M b /s, 155 M b /s, 6 2 2 M b /s
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ZENER MIO
Abstract: DIACS DO-35 5V1
Text: rZ 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MM ôm[l(STOM(£S MEDIUM POWER THYRISTORS & TRIACS < 100 A TRIGGER DIODES (DIACS Breakover voltage Breakover voltage sym m etry Breakover current A V betw een 0 and 10 mA min. (V) Package Type m io nom m ax
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zener IN 5232
Abstract: 5277A 1N52658
Text: C T SGS-THOMSON *7 # GENERAL PURPOSE & INDUSTRIAL m m ì& jè w w è s ZENER DIODES PREFERRED SERIES JEDEC SERIES Type STANDARD ZENER DIODES Vz t ' I z t * rZT 1 *2T* 'Z T * rZK 1 'Z K Ir ' V r “ VZ Vr Tam b 25 °C 500 mW / nom m ax V (O) Tgirij) — 75°C Tj max
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K004
Abstract: CSIR-2520C CSIR-3528C CSIR-3529C 2520C CSIR2521C
Text: • INFRARED SMT EMITTING DIODES IS ^ c s i | ■ ^ C a r r o M t o i^ G m ic o n d iic t o ^ C ^ ^ ^ B ELECTRO-OPTICAL CHARACTERISTIC Ta 2mm INFRARED EMITTING DIODES CSIR-2520C WATER CLEAR LENS =25°C CSIR-2521C W ATER CLEAR LENS Item S ym bol R a dian t In te nsity
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CSIR-2520C
20itiA
CSIR-2521C
WavelIR-3529C
2C126)
K004
CSIR-3528C
CSIR-3529C
2520C
CSIR2521C
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D200L
Abstract: No abstract text available
Text: / r 7-=Ei>n.- l^èiÊ^y n — — K Super Fast Recovery Diode Rectifier Module O U T L IN E D IM E N S IO N S D200LC40B 3 "M 4 n u ts 400V 200A U Q2D0LC4GB Uni t ’ mm • ÎÈtëm R A TIN G S Absolute Maximum Ratings S iB sd>7 Item Symbol Storage Temperature
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D200LC40B
50HzlB
50HzlE3
D200L
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE TDD D bb53T 31 0010L iT2 h • BZW 86 S E R IE S T " TR A N S IE N T SUPPRESSO R DIODES A ran g e of diffused silicon diodes in a DO-30 m etal envelope intended for u se in the p r o tectio n of the e le c tric a l and elec tro n ic equipm ent ag a in st voltage tra n sie n ts.
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bb53T
0010L
DO-30
BZW86-7V5
BZW86-7V5R
bti53T31
001D701
bb53T31
0D10703
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Untitled
Abstract: No abstract text available
Text: SILICO N LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provi de passive receiver protection low noise amplifiers, mixers, and detectors ,
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ZFW MARKING
Abstract: 6V8A zdx 1000 marking zfw SM5Z200A ZFW MARKING CODE ZFG 28 zener zfw Zdw 31 ZFW 3-9
Text: SbE D • 7 T 2 T 23 7 □□mS'ì'ì TTD ■ S G T H S G S -T H O M S O N EL[i OT(s *S s 6 s-thomson t-im s t S M 5 Z 3 V 3 A -> 2 0 0 A ZENER DIODES N EW S E R IE ■ HIGH SURGE CAPABILITY UP TO : 180W@ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V S U R F A C E M O U N T T R A N S IL F E A T U R E S
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RS481)
ZFW MARKING
6V8A
zdx 1000
marking zfw
SM5Z200A
ZFW MARKING CODE
ZFG 28
zener zfw
Zdw 31
ZFW 3-9
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diode SG22
Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30
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DDDD33fl
1N462A
1N463A
1N464
1N482
1N482A
1N482B
1N483
1N483A
1N483B*
diode SG22
1N918
1N400 diode
1N5317
1N69B
1N919
1N849
1N673
1N688
1N4141
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Untitled
Abstract: No abstract text available
Text: SERIES M and MV MILITARY Hi Reliability Ultra-Miniature Isolated DC-DC Converters -55°C TO + 85°C • Diodes JAN TX • Transformers manufactured to MIL-PRF-27 • Capacitors MIL-C-39003, S Level MIL-C-55681, S Level • Resistors MIL-R -39008, S Level MIL-PRF-39017, S Level
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MIL-PRF-27
MIL-C-39003,
MIL-C-55681,
MIL-PRF-39017,
MIL-S-19500,
5M12S
5M15S
5M24S
5M28S
5M48S
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DD 127 D
Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
Text: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K
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34D35T?
DD22S
DD 127 D
dd 127 dd 127 d
dd 22 s 800
eupec dd 82
DD 53 S 1200 K
DD 127
EUPEC DD 31 800
EUPEC DD 53 s 1200 k
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d2388
Abstract: D368S EUPEC D 648 S
Text: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax
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34D3i?
000011a
d2388
D368S
EUPEC D 648 S
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BZV 400
Abstract: bzv 06 bzv 400 5v6 k3 bzv 46 bzv 4v7 bzv 40 zener 6v8 CB-210 47c36 ZENER DIODES BZV 40 C 8V2
Text: zener diodes diodes zener Types THOMSON-CSF Vz t /Iz t * m in m ax V T Z T /'Z T m ax 'Z T ocvz typ Ir /V r m ax Vr •ZM Ci) (m A ) (% /°C ) (nA) (V) (m A ) 2 W / Tamb = 50°C Tj max = 175°C BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47
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ZPY 3V9
Abstract: zpy8v2 ZPY*5v6 zpy 4,7 v ZPY10 ZPY11 ZPY7V5 ZPY15 ZPY16 ZPY20
Text: SbE *?7 ]> • 7=^237 G Ü M lb ia SCS-THOMSON u l ic t ö m « S 7Ô2 ■ SGTH S S-THOMSON T -//-/5 “ ZPY 3V9 —» ZPY 100 ZENER DIODES NEW SERIE ■ VOLTAGE RANGE : 3.9V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values
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7TET237
ZPY56
ZPY62
ZPY68
ZPY75
ZPY82
ZPY91
ZPY100
0041b20
ZPY 3V9
zpy8v2
ZPY*5v6
zpy 4,7 v
ZPY10
ZPY11
ZPY7V5
ZPY15
ZPY16
ZPY20
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PL 15 Z
Abstract: zener pl33 PL6V8Z PL22Z PL3V6Z PL-43 PL7V5Z PL30Z PL8V2Z 120Z
Text: ^ THOMSON-Uw» 59C 0 2 4 9 i ü P L 3V3Z — PL200Z DIVISION SEMICONDUCTEURS ZENER DIODES DIODES ZENER 1,3 W silicon Zener diodes, herm etically sealed plastic according to normalization CC TU : F 126 offering the follow ing advantages : • • Large voltage range : 3 , 3 V to 2 0 0 V
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PL200Z
F-126
CB-210)
PL 15 Z
zener pl33
PL6V8Z
PL22Z
PL3V6Z
PL-43
PL7V5Z
PL30Z
PL8V2Z
120Z
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IN5059
Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Text: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
IN5059
BYW53
1N5060
BYW55
1N5062
1n5062 equivalent
diodes byw
Diode BYW 56
BYW 52
BYW 200
1N5060 diode
BYW 54
byw 56 equivalent
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Untitled
Abstract: No abstract text available
Text: rz 7 ^ 7# SGS-THOMSON ^ « IL K S T T O M S B Z M 8 5 C 2 V 7 -> 1 0 0 ZENER DIODES • VOLTAGE RANGE : 2.7V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values Symbol P aram eter V alu e Unit P lo t
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ZENER DIODES BZV 40 C 8V2
Abstract: ZENER DIODES BZV 85 8V2 zener 5v6 BZV 400 ZENER DIODES BZV 48 5V1 bzv 41 47C30 ZENER DIODES BZV 48 diode 47c ZENER DIODES BZV 85
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOeGœiLtiCTÔÂBÊS ZENER DIODES STANDARD ZENER DIODES Type Vz t 'Iz t * rZ T ''Z T * 'Z T * “ VZ I r 'V r Vr •ZM P ackage Tam b 7 0 °C m in m ax !2 (V) 2W P P P P P P P P P P P P P P P P P P P P P BZV
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