B 325 DD Search Results

B 325 Dd

Abstract: BUZ 325
Contextual Info: SIEMENS BUZ 325 SIPMOS Power Transistor • N channel • Enhancement mode ' • Avalanche-rated fé V>I05‘S5 J Pin 1 Pin 2 G Type BUZ 325 Vfcs 400 V b 12.5 A ^DS on 0.35 ß Pin 3 D S Package Ordering Code TO-218AA C67078-S3118-A2 Maximum Ratings Parameter

BZX85C

Abstract: BZX85C200 BZX85C22 1.3W BZX85C24 BZX85C36 BZX85C39 BZX85C43 BZX85C7V5 BZX85C 45 C1500R
Contextual Info: 57E J> m FA C O B 345^325 GG0G773 700 • F G R S b 2X85C7V5. BZX85C200 FA60R E L E C T R O N I C S 1.3 WZener Diodes "TIUlS . Dimensions in mm. DO-41 Plastic Voltage 7.5 to 200 V Power 1.3 W Standard Voltage Tolerance is ± 5% Mounting instructions

LM325AN

Abstract: lm325 Z 2,5 LM126H TI LM325H LM325 LM125/LM225/LM325/LM325A
Contextual Info: LM125/LM325/LM325A/LM126/LM326 SÔE » INSC2 b S D l l E M 0 0 7 b 3 2 b 147 S3 ÆM National NATL S E M I C O N D Semiconductor " F LINEAR 5 8 - I 1- 0 - 3 LM 125/LM 325/LM325A, LM126/LM326 Voltage Regulators General Description Features These are dual polarity tracking regulators designed to pro­

Contextual Info: 7^237 D D 4 b G 1 2 325 • S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N50 ■ . . . . V dss RDS on Id 500 V < 6 Q 2 A TYPICAL R ds (or) = 4.6 £2 AVALANCHE RUGGED TECHNOLO GY 100% AVALANCHE TESTED

bu508df

Contextual Info: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection

m5m44260aj

Contextual Info: M IT S U B IS H I NENORY/ASIC blE D • [,5^325 DOlflGMb D7 b « M I T I MITSUBISHI LSIs M5M44260AJ,LJP,RT-7,-7S,-8,-8S,-10,-10S Preliminary FAST PAGE MODE 4,194,304-BIT(262,144-W ORD BY 16-BIT) DYNAMIC RAM D E S C R IP T IO N This is a family of 262144-word by 16-bit dynamic

BZX85C

Abstract: BZX85
Contextual Info: 57E J> m 345^325 GG0G773 700 • F G R S FA C O B b2X85C7V5. BZX85C200 FA60R ELECTRONICS " T I U l S 1.3 WZener Diodes . Dimensions in mm. DO-41 Plastic Voltage 7.5 to 200 V Power 1.3 W Standard Voltage Tolerance is ± 5% Mounting instructions 1. Min. distance from body to soldering point,

JB82-59

Contextual Info: QBW QBH 75 177 261 80 185 158 Ø4.5 QBY kPa V-3YC21 C-3YC23 H-3YC24 M-1Cr18Ni9Ti 190 QBC Kpa M-1Cr18Ni9Ti L1 L2 325 520 230 406 230 372 QBYF Kpa QBYF QBYF3 b Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø6 QBF Kpa QBF1 QBF3 6 5 4 3 2 1 7 8 9 Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø87

Contextual Info: Package Number 325 - 5-Leatì DD PAK DIM INCHES MILLIMETERS MIN. MAX. MIN. MAX. .1 7 0 .1 8 3 .0 0 4 4 .3 2 .0 0 0 0.00 4 .6 5 0 .1 0 b .0 2 6 .0 3 7 0 .6 6 0 .9 4 C2 .0 4 5 .0 5 5 1 .1 4 0 .3 6 1 .4 0 0 .6 6 c .0 1 4 o CD A A1 D .3 1 0 .3 5 0 7 .8 7 8 .8 9

Contextual Info: GEC PLESSEY SEMICONDS 31E » • 3?t.êSEH 0Gl0fi63 0 MAY 1989 PLESSEY S e m ic o n d u c t o r s . PRELIMINARY INFORMATION 1 P 7 3 -4 -3 SLH 325 MINIATURE HIGH PERFORMANCE LOG I LIMITING AMPLIFIER The S L H 3 2 5 wideband amplifier e m p lo y s advanced b ip o la r in te g ra te d c irc u it t e c h n o lo g y to p e rfo rm

A42 BF 331

Contextual Info: 12345634789A6BC 1DE48F75ECF34E87C2345C7D5E C9AA2 E 3F374C2!CC9"C#$%& 'EF34EC C12B96C2!C#$%#  F3 !" FB5#1333B9D7$936B62 'B 2AB9 3 !" 3

ELM-910-927

Abstract: power led heat sink ELM Technology D-12555
Contextual Info: LED Module ELM-910-927 Preliminary 6/22/2007 Wavelength Type Technology Case Infrared LED Array Module DDH FR4/Cu-plated Description 24 20,6 Infrared LED-Array consisting of five high power LED connected in series. Chipassembly covered with plastic lenses.

SPC-401

Abstract: SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-423M SPC-424 SPC-425 150Too
Contextual Info: SOLID POWER CORP DE~| û3bS70D DDQG112 S HIGH VOLTAGE TRANSISTO RS 2.0 3.5 3.5 3.5 2.0 3.5 3.5 3.5 3.5 100 100 80 100 75 100 100 100 100 300 325 200 300 325 325 325 350 400 100 100 100 100 100 100 100 100 V 400 400 200 300 400 400 40Ó 500 500 ICEO MA Ic 125°C

Contextual Info: CD4029A Types CMOS Presettable Up/Down Counter INPUTS Vdo Binary or BCD-Decade Features: • Medium speed operation . . . 5 M H z typ. @ C l =15 pF and V DD~ V SS- 1 0 V The RCA-C D 4029A consists o f a four-stage binary or BCD-decade up/dow n counter w ith

ELC-13

Abstract: IR LED infrared led 690
Contextual Info: LED - CHIP ELC-700-25-1 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up Outline (dimensions in microns) 280 240 50 epitaxial n-AlGaAs active layer 150 R 325 n-side electrode, gold alloy 50 epitaxial p-AlGaAs p-side electrode, gold alloy

DAMA15S

Abstract: DBMA25S DBMA25P DCMA-37S DCMA-37P DEMAM9P DEMA9S ddma-50p DDMA50S DBMM17W2P
Contextual Info: D*MA Crimp Snap D How to Order — Crimp Connectors contacts are removable Receptacles (Includes Socket Contacts) W ith .120’ Through-Mounting Holes Number of Contacts Standard (Shell Size) DEMA9S 9 (El 15(A) DAMA15S 25 (B) DBMA25S DCMA37S DDMA50S 37 (C)

Contextual Info: LED - Lamp ELD-850-345 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads

IR LED 810 nm

Contextual Info: LED - Lamp ELD-810-345 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads

LED standard

Contextual Info: LED - Lamp ELD-840-325 15.11.2007 rev. 02 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description Ø4,0 ±0,1 Ø3,0 ±0,1 High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing without standoff leads

Contextual Info: LED - Lamp ELD-810-335 15.11.2007 rev. 04 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads

ELD-880-595

Contextual Info: LED - Lamp ELD-880-595 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 5 mm flat plastic case Description High-power, high-speed infrared LED, wide beam angle, housing with standoff leads 32,5 ±0,1 ±1,0 ±0,2 Note: Special packages without standoff available on request

ELD-770-344

Contextual Info: LED - Lamp ELD-770-344 15.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads

74035

Contextual Info: LED - Lamp ELD-740-354 15.11.2007 rev. 02 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 3 mm plastic lens Description High-power, high-speed infrared LED in standard 3 mm housing, small package allows compact design, housing with standoff leads

str So 765

Abstract: str 765
Contextual Info: LED - Lamp ELD-780-524 03.04.2008 rev. 01 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs 5 mm plastic lens Description 8,6 ±0,2 Ø5,9 Ø5,0 ±0,2 ±0,3 0,5 1 ±0,3 Note: Special packages without standoff available on request 2,54 Anode High-power, high-speed LED with narrow beam