B 536 Search Results

1N5353

Abstract: 1N5349 1N5383 1N5388 thomson-csf 1n5368 1n5378 1N5385 lN5380 1N5352 n534 1N5346
Contextual Info: zener diodes diodes zener Types 5 W / T amb 1N5346 B 1N5347 B 1N 5348 B 1N 5349 B 1N 5350 B 1 N 535 1 B 1N 5352 B 1N 5353 B 1N 5354 B 1 N 5355 B 1N 5356 B 1 N5357 B 1N5358 B 1N5359 B 1N5360 B 1N 536 1 B 1N5362 B 1 N5363 B 1N5364 B 1N5365B 1N5366 B 1N5367 B

TC68-536021-B

Contextual Info: TC68-Series Part Number Inductance uH Tolerance TC68-536001-B TC68-536002-B TC68-536003-B TC68-536004-B TC68-536005-B TC68-536006-B TC68-536007-B TC68-536008-B TC68-536009-B TC68-536010-B TC68-536011-B TC68-536012-B TC68-536013-B TC68-536014-B TC68-536015-B

K 4096

Abstract: KMM5368103 KMM5368103B
Contextual Info: KM M 5 36 8003B K/B KG KM M 53681 03B K/B KG DRAM M ODULE K M M 5 3 6 8 0 0 3 B K/B K G & KM M 53681 0 3 B K / B K G with Fast P a g e M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS EDO, 4K/2K Refresh, 5V FE AT U RE S G E N E R A L DE SCRIPTION The Samsung KMM53680 1 03BK is a 8Mx36bits

LM 8445

Abstract: 569T LM 361 GE59 8444T
Contextual Info: 20|~}0 ;=,5363+<=:/ 2312 87?/: :/4+@ 0EBOPMEN U U U U U U U U U U Ead] Lg2> D57895; Ead] Lg2> 8445;<7; -76<+-< .+<+ -734 BgflY[l YjjYf_]e]fl 5@ 5B BgflY[l j]kaklYf[] 544e .Yl 5@ 68TCB/ BgflY[l eYl]jaYd @_La0 @_QfM6 64@ 569T@B 5;@ 6;T@B ;@ 844T@B LM> ;@ 844T@B

569T

Abstract: GE-59 GE59
Contextual Info: 20|~}0 ;=,5363+<=:/ 2312 87?/: :/4+@ 0EBOPMEN V V V V V V V V V V Ead] Lg2> D57895; Ead] Lg2> 8445;<7; -76<+-< .+<+ -734 BgflY[l YjjYf_]e]fl 5@ 5B BgflY[l j]kaklYf[] 544e .Yl 5@ 68TCB/ BgflY[l eYl]jaYd @_La0 @_QfM6 64@ 569T@B 5;@ 6;T@B ;@ 844T@B LM> ;@ 844T@B

K4164

Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Contextual Info: M ITSU B ISH I L S Is M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate

M5K4164

Abstract: M5K4164ANL12 M5K4164ANL-12 recoma M5K4164ANL-15
Contextual Info: M IT S U B IS H I LSIs M 5 K 4 164ANL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY 1-B IT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rform ance N -channel silicongate

RASH

Abstract: MH6404AD1-15
Contextual Info: M ITS U B IS H I LSIs MH6404AD1-15 2 6 2 1 4 4 - B IT 6 5 5 3 6 -W O R D B Y 4 - B IT D Y N A M IC R A M D E S C R IP T IO N PIN The MH6404AD1 is 65 536-word x 4 b it dynamic RAM and consists o f fo u r industry standard 64 K x 1 dynamic RAMs in leadless chip carrier.

wega 3140

Abstract: MFW diode Siemens L16A Diode MFW 24 Diode MFW 25 MFW diode 31 Diode marking MFW 31 Diode MFW 26 Diode marking MFW
Contextual Info: Terminal markers Contents Terminal markers Terminal markers Introduction B.2 Selection table – terminal markers B.3 DEK card B.6 DEK MultiCard B.10 WS / ZS B.12 MultiFit for use with other makes of terminals B.16 Cross-reference table B.20 Terminal marker WAD

03E1

Abstract: 00CF ISD33000 b0334 04D5
Contextual Info:

 
      
 
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MALLORY CAPACITORS

Abstract: Mallory Start Capacitors EIA-463-B Mallory Capacitor 270-324 Mallory Capacitor 50-60 MFD 220 VAC MALLORY CAPACITORS 160 series EIA-463 MALLORY CAPACITOR mfd Mallory Start Capacitors 243-292 MALLORY CAPACITOR CATALOG
Contextual Info: TYPE MS ELECTROLYTIC AC MOTOR START CAPACITORS HIGH LIGHTS: b Capacitance: b Voltage: b Operating Frequency: b Power Factor: b Ambient Temperature: 21 - 1590 Mfd 110 Vac - 330 Vac 50 - 60 Hz 10% Max. -40gC +65gC FEATURES: b Moisture & Oil Resistant Plastic Case

TDSR 5150 pin

Abstract: TDSR 5160 pin TDSR 5150 G TDSR 5150 tdsr 5160 g 7-segment display tdsr 5150 TDSR 5150 F 7 segment display 5160
Contextual Info: 74 b b ß5 1 0 0 0 b S7 7 4SS 0.510 INCH 13 MM SEVEN SEGMENT DISPLAYS OPTOELECTRONICS YELLOW GREEN MAN5350/5360 MAN5450/5460 RED ORANGE-RED MAN5750/5760 MAN5950/5960 Large, easy to read, digits Common anode or common cathode models Fast switching - excellent for multiplexing

Lasertron dil

Abstract: QLM3S813
Contextual Info: M5E D LASERTRON INC B 5363355 OQDDSbM 3 EJLSR QLEvasssra T -W 'O l Uncooled 1 m W Laser B H B • □ Telecom trunk, access and junction applications 1.0 m W rated output power 1300 nm wavelength High-reliability ridge waveguide laser chip No cooler or temperature control required

CH1799A

Abstract: CH2056A CH1794A TBR21 CH2056AR CH1799AR CH1786A "ISP" server Cermetek Microelectronics
Contextual Info: HIGH SPEED FAMILY OF ULTRA SMALL MODEMS CH2056A /-B / ET-B CH1799A /-B / ET-B CH1794A /-B / ET-B – – – V.92 / 57,600bps / TBR21 V.34bis / 33,600bps / TBR21 V.32bis / 14,400bps / TBR21 FEATURES INTRODUCTION • Supports V.92, V.90, V.34bis, V.34, V.32bis, V.23,

Contextual Info: B&B ELECTRONICS APXG-Q5420-1612ds-R2 page 1/3 2012 B&B Electronics. All rights reserved APXG-Q5420 Infrastructure Access Point/Wireless Router/Client • Two serial ports, one Ethernet port  RS-232/422/485 to 802.11 b/g and Ethernet to 802.11 b/g  Supports up to eight clients

LM 8445

Abstract: 569T 881v QFM65
Contextual Info: 20|~}0 ;=,5363+<=:/ 2312 87?/: :/4+@ 0FBPQNFO X X X X X X X X X X Ead] Lg2> D57895; > . / Ead] Lg2> 8445;<7; Ead] Lg2> BOB4=446478964 -76<+-< .+<+ -734 BgflY[l YjjYf_]e]fl 5@ 5B BgflY[l eYl]jaYd @_QfM60 @_La 64@ 569T@B 5;@ 6;T@B ;@ 844T@B BgflY[l jYlaf_ .P]k2 dgY\/

LM 8445

Abstract: 844T 569T PG 24 AF LA 4444 gd 361
Contextual Info: 20|~}0 ;=,5363+<=:/ 2312 87?/: :/4+@ 0FBPQNFO X X X X X X X X X X Ead] Lg2> D57895; > . / Ead] Lg2> 8445;<7; Ead] Lg2> BOB4=446478964 -76<+-< .+<+ -734 BgflY[l YjjYf_]e]fl 5@ 5B BgflY[l eYl]jaYd @_QfM60 @_La 64@ 569T@B 5;@ 6;T@B ;@ 844T@B BgflY[l jYlaf_ .P]k2 dgY\/

M5K4164AL-12

Abstract: M5K4164AL-15 CSH120 M5K4164
Contextual Info: M ITSUBISHI L SIs M5K4164AL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rfo rm a n ce N -channel silicongate

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

Contextual Info: MITSUBISHI LSIs MH6404AD1-15 2 6 2 1 4 4 -B IT 6 5 536-W O RD B Y 4-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 6 4 0 4 A D 1 is 65 5 3 6 -w o rd x 4 b it d y n a m ic R A M and consists o f fo u r in d u s try standard 64 K x 1 d y n a m ic R AM s

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
Contextual Info:
     

      
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MMBR536

Abstract: MBR536 037 RSU MBR53
Contextual Info: MOTOROLA I SC -CXSTRS/R t > S K > f ¿D4 F> mu Iunuuft a ^ D oo v A o mo / n b 3 b ? 2 5 4 D r I > R j □ □ 7 Û 7 0 2 / e / u z d t - ^ □ - MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M PS536 M M B R 536 PIMP Silicon High Frequency T ransistors . . . this h igh current gain -b an d w id th tran sistor m a ke s an excellent RF am plifier and

3bdaa

Abstract: A45B 50B06 D876
Contextual Info: 123455617897A66666 81983B6 6!"B6##47456!"B7433$74B45387B B B 1 %99$7!9&B447B'!5B2 B B54!7B*478B 1 6 6!"B8$$B+,B 1 -94""45B744!!6"6&.B4/45B4"81BDB!B 1 ,!"67!40B!50B4A47!$74B98A453!40B 1 -94""45B"85 47AB3!6"6&B

mcm6665

Abstract: mk4564 M5K4164ANP-12 M5K4164ANP-15 mcm-6665 mcm6665 MOTOROLA m5k4164anp mostek mk4564 M5K4116P K4164ANP-15
Contextual Info: M IT S U B IS H I LSIs M 5 K 4 1 6 4 A N P -1 2 , -1 5 6 5 5 3 6 - B IT 6 5 5 3 6 -W O R D B Y 1 -B IT D Y N A M IC R A M DESC RIPTIO N PIN C O N F IG U R A T IO N {TOP VIEW ) This is a fa m ily of 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate