B 660 TG Search Results

B 660 TG

Abstract: 7A PNP POWER TRANSISTOR "SOT23" BF660 7A PNP POWER TRANSISTOR SOT23 660 TG transistor CB 945
Contextual Info: SIEMENS PNP Silicon RF Transistor BF 660 • For VHF oscillator applications Type Marking Ordering Code tape and reel PinC tanfigu ration 1 2 3 Package1) BF 660 LEs Q62702-F982 B SOT-23 E C Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

Semikron MSK B 80

Abstract: RSM AH-16
Contextual Info: S1E D • Ô13bb71 GDDBTfll 2TT « S E K G s e MIKRG n SEMIKRON INC V rsm VVRMS V rrm V V 400 800 80 250 V BR VvRMS V V 1300 1700 500 660 M in ia t u r e B r i d g e R e c t if ie r s Id (Tamb = 45 °C) 2A M S K B . . - 1, 5 M SKa B . - 1, 5 Types ^ r?Jb -o s

Contextual Info: Ce nter Tap & Doubler Assemblies U l t r a f a s t Recovery 804 Series Dim. A B C D E F G H Inches M illim e te r .660 MAX. .165-,175 DIA. 2.240-2.260 1.870-1.880 1.470-1.490 .33 4-,354 .115-.135 .302-.322 16.76 MAX. 4.19-4.45 DIA. 56.90-57.40 47.50-47.75

SH30D13A

Abstract: SH30G13A SH30F13A SH30H13A SH30J SH30L13A S-H-30H SH30F 012-FC TOSHIBA THYRISTOR
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39C 02 2 9 7 Hl B i TOSHIBA -CDISCRETE/OPTOï SH30L13A D 7e 2 - ^ / 7 SPEED THYRISTO R TDTTSSO DOO SET? 1 | ~ 800V 30A MAXIMUM RATINGS R A T IN G 200 300 400 500 600 800 300 400 500 600 720 960 30 47 660(60Hz)

660 TG

Abstract: B 660 TG 2764C 2462C 1703C
Contextual Info: 6-7. Chip LEDs 6-8. AIGalnP Ultra-High Intensity LEDs • A b s o lu te Maximum Ratings Ta=25°C Parameter ^Absolute Maximum Ratings (Ta=25°C) Ratings Parameter UnH If mA 30 If mA I fp mA 70 I fp mA 4 Vr V — 3 0 to + 8 5 Top V Vr Top r T s tg c c 30 1 00

k2785

Contextual Info: PRODUCT SELECTION LISTING li/M E X -U te s SSB-LX620XX SERIES 6 x2 0 m m LIG H T BAR, 3 LED CHIPS FEATURES A P P L IC A T IO N S O P T IO N S A V A IL A B L E • F o u r C o lo r O p tio n s • 3 a r L tg h t S o u rc e • B a c k L ig n tm g o f L e g e n d s

B 660 TG

Abstract: L806TG
Contextual Info: 20mm BIG DOME LEDs liED’ Œ 6 CHIP & 12 CHIP ULTRA RED/HI-EFF RED/YELLOW/GREEN ABSO LUTE M A X. RATINGS T a = 2 5 'C T o p r/ T s tg LE DTRO NICS PART NO . LED COLOR NEW O L D / see \ \noU a J Pd mW Ifp mA If mA Vr V (a ) (a ) (a ) (a ) (a )= D A T A

operational amplifier power 1A

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications •  Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features         Functional Block Diagram Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

QFN 4x4 mm 20L

Abstract: JESD22-A114 RO4003 class 12 commerce 2011 T 2A 250V
Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

Contextual Info: TGA4530-SM 17-21 GHz High Output TOI Packaged Amplifier Key Features • • • • • • • • Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 825mA Frequency Range: 17 - 21 GHz 38 dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB Nominal Return Loss

RO4003

Contextual Info: TGA4530-SM 17-21 GHz High Output TOI Packaged Amplifier Key Features • • • • • • • • Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 825mA Frequency Range: 17 - 21 GHz 38 dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB Nominal Return Loss

Contextual Info: s e MIKROn Absolute Maximum Ratings Symbol Units VcES lc = 20 k£2 T c a s e = 25/80 °C ICM Tcase VcGR R ge = 25/80 °C; tp = 1 ms V g es P fo t p e r IG B T , Tcase = 25 °C T j, T s tg V sol humidity climate Values Conditions ' AC, 1 min. DIN 40 040

Contextual Info: G M M 7 6 4 J 0 0 0 C T /T G -6 /7 L G S e m ic o n C o .,L td . 1,048,576 W O R D S x 64 BIT CMOS DYNAMIC RAM MODULE Description Features T h e GM M7641OOOCT/TG is an IM x 64 bits D ynam ic R A M M O D U L E w hich is assem bled 4 pieces o f 1M x 16bit D R A M s in 4 4 pin

gt 568

Abstract: rg33c
Contextual Info: 8 il L ig p ? a n Top r / T*tg / !H \ LEDTRONICS PART NO. BI-COLOR / TRI-COLOR LEDs \not93f T1 3mm , ABSOLUTE MAX. RATINGS Ta=25'C Pd mW Ifp mA If mA Vr V (5mm), 2 & 3 LEADS, RED/YELLOW/GREEN ELECTRO-OPTICAL CHARACTERISTICS Ta=25-C If mA typ Iv mcd m in /typ

AY1102P

Abstract: 1203P VR1102 BR1102P
Contextual Info: A C I N T E R F A C E INC IDE D I 0053303 0Q00017 b Chip LEDs were developed for surface mounting, there by contributing to both product compactness and economy. To meet a broad spectrum of application requirements, all colors and combinations are'available, in addition to a

BBL504-05-02

Abstract: FR530 FR-530 ledtronics 470
Contextual Info: LTR REVISION DATE REFERENCE ONLY APPD 0 6 -0 3 -0 5 NOTES: 1. LENS 2. SLEEVE MATERIAL: MATERIAL: CLEAR UV POLYCARBONATE 3. BASE MATERIAL: 4. OPERATING TEMPERATURE: T o p r: 5. STORAGE TEMPERATURE: T s tg : RYNITE ER 530 NICKEL PLATED BRASS -4C T C TO +8CTC

Contextual Info: 9 GMM7641010CT/TG-6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7641010C T /T G is an 1M x 64 bits EDO D ynam ic RAM M ODULE w hich is • 168 pins D ual In-L ine Package - G M M 7641010C T

TLR123

Abstract: LBR3378S TLS262 EBR3371X EBR3402S TLUR163 TLR124 EBR3368S TLR102A EBR3432S
Contextual Info: - 26- 53 a J+ 4» fltf c ’ , « X 1MÈS ft?#« 2 Xr ¡deg'i 5. 'T ., = 25’0 T,:=25'C tsm w - t 7, irnA: vv '.v; If imAi Wl « ¡ f \iW ï. »¡.fi ÌF Vu 'm A: •V ■ ¡’C.' EBR3402S ÄS 30 660 60 20 1.7 20 50 4 -30-85 3« BR3402S Ä it 30 660 30 20

ir 514h

Abstract: PF 513h power diode datasheet TCM5033T TCM5033T equivalent ir 243h ir 499h ir 507h 234h 243H 517H
Contextual Info: TCM5033T CMOS Area Image Sensor TCM5033T 1/4-inch 330 K-Pixel CMOS Color-Image Sensor with Built-in ADC for VGA The TCM5033T is a CMOS color-image sensor with a built-in ADC for VGA. It outputs a signal for each pixel in sequence every 1/30 s. This is known as progressive scanning.

TCM5033T

Abstract: AD 653
Contextual Info: TCM5033T CMOS Area Image Sensor TCM5033T 1/4-inch 330 K-Pixel CMOS Color-Image Sensor with Built-in ADC for VGA The TCM5033T is a CMOS color-image sensor with a built-in ADC for VGA. It outputs a signal for each pixel in sequence every 1/30 s. This is known as progressive scanning.

509H

Abstract: IR 509H
Contextual Info: TCM5033T CMOS Area Image Sensor TCM5033T 1/4-inch 330 K-Pixel CMOS Color-Image Sensor with Built-in ADC for VGA The TCM5033T is a CMOS color-image sensor with a built-in ADC for VGA. It outputs a signal for each pixel in sequence every 1/30 s. This is known as progressive scanning.

Contextual Info: MARKTECH INTERNATIONAL IflE D • ST^bSS GD0G3S1 1 ■ HIGH EFFICIENCY & ULTRA BRIGHT NUMERICS .53" DIGIT SIZE - R.H.D.P. T -m -v s W AVE­ M A T E R IA L P A R T NO . O P T O -E L E C T R I C A L C H A R A C T E R IS T IC S M A X IM U M R A T IN G S PEAK