B I76 Search Results

190540099

Abstract: B2090
Contextual Info: IO 8 MATERIAL NO. ENG. NO, LOOSE PIECE 9 0 54 0 0 6 3 I2HDX B-20 9 0 54 0 0 6 5 I4HDX B-20 90540066 9 0 54 0 0 6 9 90540070 90540090 9 0540092 9 0540094 9 0540098 B-20 -38HDX B-20 •56HDX B-20 -76HDX B-228-06HDX B-228-08HDX B-228-IOHDX B-230-IOHDX B-230- I4HDX

Contextual Info: S D - 5 5 1 7 6 -0 0 3 2.2±0.1 aa a a a aBa a» m ¥ I E l _ B±0.1 2 .2 ± 0 .I b b b b b b b b b i E L FORM OF 30CKT. ° RECOMMENDED P .C .BOARD PATTERN DIM. R EF. agg NOTES 51146 V ' J - X I. MATES WITH : 5 IM 6 S E R IE S 2 . W K M ATERIAL 0 1 A WAFER : 5 S S ; K U v ’ - ( L C P ) U L 9 4 V - 0

lsr 3005-7

Contextual Info: BSR.USR B S R 20.U SR 20 th rou gh B S R 3 0.LSR 30 O utput power 20 W and 30 W • Input/output isolation 2.5 kVrms B.DSR , • Output overvoltage protection by second 4 kVrms (LSR, USR) Input transient suppression circuit and control circuit • Solid mechanical construction, ideal for

Contextual Info: 3 & Q THIRD / NGLE PROJECTION D ± 6 .2 9 3 .8 t — x Z 5 4 -* °'cSrx 3 / = '78.74- m o .C -l 7 62 S 9 -I -2 . f -4 BSC .h -l 'c ir c u it ) ZS4* DIMENSIONS IN MM. DO N O T S C A LE PRINT i * •?- i -; ( B B ^ ±D \ te c .e m p m e ) S ^ b -O f c ir c u it )

Contextual Info: B DATE JR f t REV. I I P3 1 D E S C R IP T IO N DON NO. fi 1 CHK. DR. $ H APPD. & s APPD. ± 0. 1 3.75 i r “ T i 11no< v it J is B ±0. 1 t 0 .4 — B 2 : 1 XXXXXXXXXX m .S .^l'/A R TIC LE LABEL XXXX XX £« (DESCRIPTION) F I - X 3 0 S S L A - H F - R 2 5 0 0

x37c

Contextual Info: B@9 ,>-,4* 4WWT=?BC= $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ R ' AH 93 E7 5: 3 C97 R IEC7? 7 6G 6EC3 E76 - ;J /. L + ;J"]\#%[Oe )'+1 W /, \9 * U%af^ R # ;9: B73 = 5FCC7@ E53 B3 4 ;> ;EJ R , F3 > ;8;76 for industrial grade applications 3 55AC6; @ 9 EA % 

11H11

Contextual Info: IO SD- 19044-008 8 MATERIAL NO. ENG. NO, LOOSE PIECE 90440 37 I2HD B- 0 90440 39 B- 0 I4HD 90440 90440 90440 90440 90440 90440 90440 90440 90440 40 90440 90440 90440 90440 90440 90440 90440 72 73 74 42 6 62 63 66 67 68 80 82 84 86 BBBBBBBBB- 0 -38HD 0 -56HD

4030-I6G

Contextual Info: 13 12 11 10 -CENTERLINE OF PIN IN AREA SHOWN DIM. A NOT TO VARY FROM CENTERLINE OF PIN AT DATUM CKTS. NO. OF -D- BY • D IM .B MORE THAN .0 0 8 IN ANY DIRECTION DIM. B o - SEE D E TAIL 3 (2.54±.05 .I00± .002 TYP. BETWEEN ANY TWO ( CONSECUTIVE CKTS AT DATUM

Contextual Info: 12 13 10 CIRCUIT S IZ E -B- DIM. B DIM. C DIM. D I3.90 9 .0 0 I2.58 I2.40 .547 .354 .495 .488 I8.90 I4.00 I7.58 I7.40 20 30 1 . 00 . 030 .35 DIM. A |0. 2 0 / . 0 0 8 IX I 40 4 • 2Z01.008 4 _t 4.2 I 1.00 I66 .039 1.79 .346 50 5.14 .202 .240 60 64 70 SEE NOTE 6

M3911

Abstract: AWG826 molex 5578 series molex mxj 500 SD-5320-NB
Contextual Info: 5 3 4 2 NOTES 1. M A TER IA L HOUSING TERM INAL CONTACT AREA : G .F . 15Z. P B T P U L9 4 V -0 : PHOSPHOR BRONZE 2. FOR USE WITH AWG*26 & * 2 8 STRANDED WIRE (C O N SISTS OF 7 CONDUCTORS) 2.95REF, AND *2 8 SO LID W IRE. 1.14(.045) D IA. MAX. IN SU LA TIO N RIBBON C A B LE WITH

amplificateurs operationnels

Abstract: ssv 620 CB-98 brochages equivalente Thomson-EFCIS
Contextual Info: o THOMSON-EFCIS t ec t e e t e b i 761 C ircuits Intégrés DOUBLE A M P L IF IC A T E U R S O P E R A TIO N N ELS D U A L O P E R A T IO N A L Les T E C , T E E ,T E B 1 7 6 1 sont des doubles am plific ateurs opérationnels utilisables dans de nombreuses applications.

S1C33L17

Abstract: S1C33L17D S1C33L17F Inter-ICs dot led display large size with circuit diagram LOT code stmicroelectronics S1C33L01 S1C33L17B 2451c BT 342 project
Contextual Info: S1C33L17 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L17 Technical Manual S1C33L17 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411520600 Fist issue June, 2008 C B

173681-2

Abstract: 25365.123.211 25325.123.211 Hartmann 221 GHW Connectors
Contextual Info: GHWmGROTI & HARTMANN '7 VERBiNDUNGSTECHNIK Flachstecktechnik 2,8 mm Flat connectors 2.8 mm 411 T Flachsteckhulsen Receptacles fur Steckerbreite 2,8 mm DIN 46330 und ahnliche Ausfuhrungen for tab width 2.8 mm DIN 46330 and similar types Typ 1 Schnttt A-B Typ

hd64180

Abstract: 85mVG LTC1092AMJ8
Contextual Info: LTC1091/LTC1092 LTC1093/LTC1094 L in Ç A B . TECHNOLOGY ] 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems F € flT U R € S • Programmable Features Unipolar/Bipolar Conversions Differential/Single Ended Multiplexer Configurations ■ Sample and Holds

OZ960

Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED

SCI7631C

Contextual Info: 3 ASSPs -8 Power Supply ICs ISwitching regulators P a rt n u m b e r Input voltage V-typ. Output voltage (V) Oscillator Voltage detection Power-on dear Battery backup OmxrtwlBge tem­ ffippte noise suppression input perature SCI7631C ca DIP-8pin 2.00 SCI7631M ca

6EA8

Abstract: 6EA8 tube K556 general electric
Contextual Info: 6EA8 6EA8 ET-T1480A Page 1 12-59 TRIODE-PENTODE FOR VHF CONVERTER APPLICATIONS ^ T U B E S DESCRIPTION AND RATING The 6EA8 is a miniature tube which contains a sharp-cutoff pentode and a triode in one envelope. Each section has a separate cathode and is electrically

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

PK-70873-0607

Contextual Info: 13 12 10 DIM . A DIM. B DIM . C DIM , D 20 13.90 .547 18.90 .744 23.90 .94 1 28.90 1.138 33.90 1.335 35.90 1.413 38.90 1.53 1 43.90 1.728 45.90 1.807 48.90 1.925 53.90 9.00 .354 14.00 .55 1 19.00 .748 24.00 .945 29.00 1.142 31.00 12.58 .495 17.58 .692 22.58

sj 2258

Contextual Info: 10 13 4 :iRcun SIZE D IM . A D IM I3.90 .547 I8.90 .744 23.90 .941 28.90 1.138 33.90 1.335 35.90 1.413 38.90 1.531 43.90 1.728 45.90 1.807 48.90 1.925 53.90 2.122 58.90 2.319 63.90 2.516 ou jU TOP OF HOUSING TO SEATING PLANE SEE NOTE 2 3 .B D IM 9.00 .354

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 37702M 4LX XX FP S IN G L E -C H IP 1 6-B IT CM O S M IC R O C O M P U T E R DESCRIPTION T h e M 3 7 7 0 2 M 4 L X X X F P is a s in g le -c h ip m ic ro c o m p u te r d e ­ PIN CONFIGURATION TOP VIEW s ig n e d w ith h ig h -p e r fo r m a n c e C M O S s ilic o n g a te t e c h n o lo ­

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

R9810

Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density