B Y DEVICE MARKING Search Results

U74LVC1G00

Abstract: 10MHZ U74LVC1G00G-AF5-R U74LVC1G00G-AL5-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G00 CMOS IC SINGLE 2-INPUT NAND GATE „ DESCRIPTION The U74LVC1G00 is a 2-input NAND gate device which provides the Function Y=A • B or Y=A + B in positive logic. This device has power-down protective circuit preventing device

Contextual Info: SN74LVC1G332 www.ti.com SCES489E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-OR Gate Check for Samples: SN74LVC1G332 FEATURES DESCRIPTION • The SN74LVC1G332 device performs the Boolean Y + A B ) C or Y + A • B • C function

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G10 CMOS IC SINGLE 3-INPUT POSITIVE-NAND GATE  DESCRIPTION The U74LVC1G10 performs the Boolean function Y  A • B  C or Y = A + B + C in positive logic. The device is fully specified for partial-power-down applications

U74LVC1G02

Abstract: 10MHZ U74LVC1G02G-AF5-R U74LVC1G02G-AL5-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G02 CMOS IC SINGLE 2-INPUT NOR GATE „ DESCRIPTION The U74LVC1G02 is a 2-input NOR gate device which provides the Function Y=A+B in positive logic. This device has power-down protective circuit preventing device from destruction when it is powered down.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G02 CMOS IC SINGLE 2-INPUT NOR GATE  DESCRIPTION The U74LVC1G02 is a 2-input NOR gate device which provides the Function Y=A+B in positive logic. This device has power-down protective circuit preventing device from destruction when it is powered down.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G02 CMOS IC SINGLE 2-INPUT NOR GATE „ DESCRIPTION The U74LVC1G02 is a 2-input NOR gate device which provides the Function Y=A+B in positive logic. This device has power-down protective circuit preventing device from destruction when it is powered down.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G08 CMOS IC 2-INPUT AND GATE DESCRIPTION „ The U74LVC1G08 is a 2-input AND gate which provides the Function Y=A*B. This device has power-down protective circuit, preventing device destruction when it is powered down.

KTK597

Abstract: MARK F FB KTK597
Contextual Info: SEMICONDUCTOR KTK597 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 FB 1 2 Item Marking Description Device Mark F KTK597 hFE Grade B A, B, C, D, Y 1 , GR(2) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G08 CMOS IC 2-INPUT AND GATE „ DESCRIPTION The U74LVC1G08 is a 2-input AND gate which provides the Function Y=A*B. This device has power-down protective circuit to prevent device form destruction when it is powered down.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U7SH08 CMOS IC 2-INPUT AND GATE „ DESCRIPTION The U7SH08 is a 2-input AND gate which provides the Function Y=A*B. This device has power-down protective circuit, preventing device destruction when it is powered down. „ FEATURES

MARKING rkm

Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & rf- sim Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications • 1 B B General purpose rectifier applications • y L—

SC016-2

Abstract: SC016-4 SC016-6
Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & r f - s im Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications 1 • B B General purpose rectifier applications • y L—

Contextual Info: SIEMENS BXY 42BA-6 Silicon PIN Diode • Fast switching • Coax package * E SD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering C ode Pin Configuration Package* B X Y 42BA-6 - Q62702-X146 Í D ki o EHA07001

F MARKING

Contextual Info: SC321 1.0A ¡S i& S liiffc y *< K FAST RECOVERY : Outline Drawings E 04 I j 12* Features • Ü 7 F : Marking Surface m ount device • f im to h i/m z w M H igh voltage by mesa design C tlh ttie Mark Coda High reliability B Tvc* 3C321-2 b Codo MB : Applications

b42 transistor

Abstract: KTX101U Marking B4
Contextual Info: SEMICONDUCTOR KTX101U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking B4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark B KTX101U hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.

Contextual Info: SN74LVC1G386 www.ti.com SCES439E – APRIL 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-XOR Gate Check for Samples: SN74LVC1G386 FEATURES DESCRIPTION • The SN74LVC1G386 device performs the Boolean function Y = A x B × C in positive logic. 1 2

Contextual Info: BBY39 yv DOUBLE VARIABLE CAPACITANCE DIODE The B B Y 3 9 is a double variable capacitance diode with a common cathode and mounted in a micro­ miniature envelope SOT-23 , suitable for surface mounting. The two diodes in one envelope are matched. The device is intended for application in electronic tuners in satellite T V systems.

zo 405

Abstract: U74LVC1G32G 10MHZ U74LVC1G32 U74LVC1G32G-AF5-R U74LVC1G32G-AL5-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74LVC1G32 CMOS IC SINGLE 2-INPUT POSITIVE-OR GATE „ DESCRIPTION The U74LVC1G32 is a single 2-input OR gate which provides the Function Y=A+B in positive logic circuit. This device has power-down protective circuit to prevent the

Contextual Info: SC802-04 1.0 A L : O utline Drawings S sa 'y b ^ — ' V J T ? ' - f ¿ t — SCHOTTKY BARRIER DIO DE : Features Surface mount device • “I&Vf Low V f :tk : Marking Super high speed switching. • 7V — m± High reliability by planer design. • E l i ! : A pplications

MTL ICC 301

Contextual Info: D ISTR IBU TIO N S TA T E M E N T A, A p p ro ve d fo r p u b lic re le a se ; d is trib u tio n is u n lim ite d . 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system see 6.6 herein . Two product assurance classes consisting of m ilita r y high r e l i a b i l i t y (device classes

sc802

Contextual Info: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.

L33 TRANSISTOR

Abstract: TC-2160 marking l33
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G A 1A 4M M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in T Y P E in millimeters B] = 10 ki2 R 2 = 10 k i î • Com plem entary to G N 1 A 4 M

M38510/31401BEX

Abstract: 31401BEX motorola 54ls123 901FX Dayton variable drive
Contextual Info: T h i s M a t e r i a l C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 1. SCOPE 1.2 Part number. The complete part number shall be as shown in the following example: 76039 Drawing 01 n u mb e r Device type 1 .2 .1 1.2.1 E X T

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n