B-8 CASE WEIGHT Search Results

2N117

Abstract: 2n117 texas ScansUX7
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . DL-S B 8 8 9 6 , M A R C H 1 9 6 8 9 to 2 0 beta spread Spedficaly designed for high gaia at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

Contextual Info: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors

2N118

Abstract: X10-4 I15-0 ScansUX7
Contextual Info: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 5 8 8 9 7 , M A R C H 1 9 5 8 18 to 4 0 beta sprawl SpedficaHy designa i for Ugh gaia at htgii t— porat— s mochanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2N118A

Abstract: ScansUX7
Contextual Info: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 8 6 beta spread Specifically designed for Ugh gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

E222870

Contextual Info: B&B ELECTRONICS SCPx11-0712r001ds page 1/2 2011 B&B Electronics. All rights reserved SCP211 & SCP311 RS-232 to RS-422/485 Converters • Isolated and Non-Isolated Models  ESD Protection - 8 kV Contact, 15 kV Air  Rugged Metal Case  Wide Operating Temperature Models

Contextual Info: B&B ELECTRONICS USO9ML2-0712ds page 1/2 2011 B&B Electronics. All rights reserved USO9ML2 USB to RS-232 Converter With Isolation • 2 kV Isolation  ESD Protection - 4 kV Contact, 8 kV Air  Compact In-Line Case  USB 2.0 Full Speed Compatible 12 Mbps

2N118A

Contextual Info: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 86 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

Contextual Info: W005G THRU W10G GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 5 Amperes FEATURES Case Style WPG ^ 0 .3 8 8 9 .8 6 n u o to b a \ ♦ Plastic material has Underwriters Laboratory Flammability Recognition 94V-0

Contextual Info: B&B ELECTRONICS USR60x-2112ds page 1/4 2011 B&B Electronics. All rights reserved USR602 & USR604 Heavy Duty USB to Serial Converters With Port to Port Isolation • 2 kV Port to Port Isolation  ESD Protection - 8 kV Contact, 15 kV Air  Rugged Metal Case & High Retention USB Connector

Contextual Info: B&B ELECTRONICS USR60x-2112ds page 1/4 2011 B&B Electronics. All rights reserved USR602 & USR604 Heavy Duty USB to Serial Converters With Port to Port Isolation • 2 kV Port to Port Isolation  ESD Protection - 8 kV Contact, 15 kV Air  Rugged Metal Case & High Retention USB Connector

15KW

Abstract: B512FSE-2T E72445 condor B5
Contextual Info: Series B-2T, B-2 25-42.5 Amp • SCR/DIODE Modules • Eight Standard Circuits • For AC or DC Variable Voltage Output Up To 15KW PART NUMBER Series Type B-Case style Ceramic Base IDENTIFICATION Current Circuit Type 5 - 25 Amps 1-8 6 - 42.5 Amps (see schematic

2N119

Contextual Info: TYPE 2N119 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58899, M A R C H 1958 36 to 8 6 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.

Contextual Info: Case Style GM GM1106 Outline Dimensions GM1106 SERIES N MALE CONN-1 N MALE (CONN-2) CASE STYLE # A B C D E T GM1106-1 GM1106-1.5 GM1106-1.64 GM1106-2 GM1106-3 GM1106-3.28 GM1106-4 GM1106-4.92 GM1106-5 GM1106-6 GM1106-6.56 GM1106-7 GM1106-7.5 GM1106-8 GM1106-9

"Bridge Rectifier" KBPC 2506

Abstract: "Bridge Rectifier" KBPC 2508 "Bridge Rectifier" KBPC 2504 B380 DIOTEC kbpc b250 bridge rectifier diotec b380 B250 diotec b125 110-25 B125/110-25
Contextual Info: S7E D • 'îOOl'iSM DOODlMfl 34T « D I O T KBPC 2500.2510 / B.-25 0 ,8*0.05 Silicon Rectifier Bridge Nominal current Repetitive peak reverse voltage diotec elektronische — 18.1 Î0.5— ¿ Metal case, weight 26g 4 . 9 i -15 Casting compound according

diode skn 21

Abstract: SKN 21 DIODE K3M12 SK 782 k3m6 diode skn 240 semikron semikron sk 240 000E-19 K3-M12 semikron k3m12 i s
Contextual Info: s e MIKRON Section 8: Rectifier Diodes Sum m ary of Types Type • New type 1 N 4001 . 4007 G SK 1 SK 1 G SK 3 V rrm V rsm Ifrms IfaV sin. 180 V A A 50 . 1 000 3 @ T case °C 1,1 751> Ifsm 10 ms 25 °C i2t 10 ms 25 °C A A2s 35 6,1 E 32 B 8-5 B 8-9 1 200 . 1 600

Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for

k1284

Abstract: 55sc t18t K866 sfernice t18T
Contextual Info: 3ob- oZOU- ^ 'j} b b - r (o3'2C Data sheet E 10/2.420 - 1159s 0,75 W at 70°C VISHAY J 1 8 3/4” rectangular multiturn cermet trimmer -T SIEWiCi NF C 83-251 MIL-R-22097 CECC41 100 LNZ Potentiometers and trim m ers - industrial grade HIGH PERFORMANCE PLASTIC CASE

Contextual Info: B 4 0 C 1 O O O G T H R U B 3 8 0 C 1 0 0 0 G GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 65 to 600 Volts Forward Current -1.0 Ampere FEATURES Case Style WPG ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

bux diode

Abstract: BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 siemens power transistor bux c T3329 22-16 diode
Contextual Info: ESC D • 0235bOS QQQ4ÔS4 1 ■ S I E 6 , T-33-29 NPN Silicon Darlington Power Transistor BUX28 Not for new d e sign - SIEMENS AKTIEN6ESELLSCHAF B U X 2 8 is a triple diffused monolithic N PN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between

BSY17

Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,

TPC21MGRA2

Abstract: TPC23R204 ALCO1
Contextual Info: 7 8 T H IS DRAWING COPYRIGHT IS U N P U B L IS H E D . RELEAS ED FOR 5 6 PU B LIC ATIO N ALL RIGHTS RESERVED. By - MATERIALS COMPONENT NAME BASE MATERIAL CASE LCP, TERMINAL, WIRE LUG GOLD BRASS GOLD OVER TERMINAL, BRASS GOLD OVER NICKEL IN CONTACT AREA,

b500c1000

Contextual Info: B.C 1000 Silicon-Bridge Rectifiers h- 19 1 Typ + ”V Nominal current Nennstrom - - 2x45°—1 - t Silizium-Brückengleichrichter - - 5 — AN 1.0 A Alternating input voltage Eingangswechselspannung — 40 40.500 V JÓ0 8 — Pastic case Kunststoffgehäuse

03gm

Abstract: IRC W-500 Transistor BSX 95
Contextual Info: 25C D • A 2 3 £ b Q 5 0 D Q M Ö 1 S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - S I E M E N S A K T I E N 6 E S E L L S C H A F B SX 4 8 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.