B0000H Search Results

A29L008

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

82C452

Abstract: P82C452 82C452A crt controller 6845 MCA Bus 8bit vga controller plasma 640x480 64kx4 DRAM LM339 XR31
Contextual Info: 82C452 Super VGA Graphics Controller Data Sheet September 1991 P R E L I M I N A R Y Copyright Notice Copyright 1990, Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce,

2561b

Abstract: CPU 314 IFM 8kx1 RAM cy17 ALI chipset fast page mode dram controller CY2254ASC-2 CY27C010 CY82C691 CY82C693
Contextual Info: PRELIM INARY CY82C691 Pentium hyperCache™ Chipset System Controller Features Supports mixed standard page-mode and EDO DRAMs Supports the VESA Unified Memory Architecture VUMA Support for standard 72-bit-wide DRAM banks Supports non-symmetrical DRAM banks

schematic diagram cga to vga

Abstract: DD11D1D SCHEMATIC mda VGA board cga ega vga RAMDAC DIP BT477 TTL sync video CGA to vga schematic diagram cga to vga circuit convert ega to vga I334 cga to vga
Contextual Info: UM•■ ■■• ■■ ■■ai i v a n i r à 82C453 Ultra VGA Graphics Controller ■ High Performance VRAM VGA optimized for 800x600 and 1024x768, 16 and 256 color, display resolutions interlaced/non-interlaced ■ 4 VRAMs (256Kx4) support all Super VGA

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

ba 5937 fp

Contextual Info: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

schematic diagram cga to vga

Abstract: cga to vga circuits SCHEMATIC mda VGA CRT MONITOR SCHEMATIC DIAGRAM monochrome TTL sync video CGA to vga SCHEMATIC mda VGA board 82c453 cga to vga hercules PLCC-44 cr16
Contextual Info: 82C453 Ultra VGA Graphics Controller Data Sheet July 1991 Copyright Notice Copyright 1990, 1991 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit, transcribe, store in a retrieval system, or translate into any language or

M3062

Abstract: TA2140 csc 2313 m3062lfgpgp u3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

yg 2822

Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
Contextual Info: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En­ hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12

M29F800D

Abstract: M29F800DB M29F800DT
Contextual Info: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

E0000

Abstract: ES25P80 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

29F800T

Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

FPT-48P-M19

Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2000-1o/M B84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time