B12 68 DIODE Search Results

ZENER B18

Abstract: b18 zener
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

BZX55

Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

BZX55

Abstract: zener b27 b16 zener b2v4 B20 zener diode glass BZX55B zener BZX 180 b9v1 B2V7
Contextual Info: BZX55B min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 oC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW

BZX55

Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

bzx55 024

Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

MBC50-10B12

Abstract: 68b1 MBC50-8B1 MBC50-20B12 MBC50-82B1
Contextual Info: Capacitors: MNOS Series Bare Die • Low leakage current The Aeroflex / Metelics MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

DIODE B12 51

Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Contextual Info: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

Contextual Info: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

TA141

Abstract: diode td13 TD-101 TA22 TD-121 TD13 TB-23 BU7988KVT g171
Contextual Info: BU7988KVT LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The

BZX55-B200

Abstract: BZX55B BZX55B2V0 BZX55B2V2 BZX55B2V4 BZX55B2V7 BZX55B3V0 BZX55B3V3 BZX55B3V6 BZX55B3V9
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Power Dissipation Ptot

TA141

Abstract: HSYNC, VSYNC, DE TB-141
Contextual Info: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT No.12057EAT05 ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number by 3(1/3) or less. The

bzx b27

Abstract: BZX55B27 13 BZX bzx 180 BZX 2.7 v BZX 5.1 15 BZX 18 BZX BZX55B equivalent BZX55B
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Max. 3.9 ST Black Part No. XXX Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC

BU7988KVT

Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
Contextual Info: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number

ZENER B18

Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30
Contextual Info: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung

Contextual Info: 2BZX84B3V0 . 2BZX84B47 300 mW 2BZX84B3V0 . 2BZX84B47 (300 mW) Surface mount Silicon Planar Dual Zener Diodes Silizium-Planar-Zener-Doppel-Dioden für die Oberflächenmontage Version 2014-04-04 Maximum power dissipation Maximale Verlustleistung 2.9 1.1

Contextual Info: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung

IDTQS34XVH2245

Abstract: QS34XVH2245
Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions