B12 MARKING Search Results

C541U

Abstract: C541U-1E P-SDIP-52
Contextual Info: Microcontrollers Errata Sheet 10 July 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

AXICOM IM03

Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR

C541U

Abstract: C541U-1E
Contextual Info: Semiconductor Group Microcontrollers Errata Sheet Sep 4, 1998 / Release 1.2 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C541U

Abstract: C541U-1E
Contextual Info: Semiconductor Group Microcontrollers Errata Sheet Nov 19, 1998 / Release 1.3 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

7168-m

Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR

Contextual Info: 857217 742.5 MHz SAW filter Applications • • General purpose RF filters For B12/13 DL repeater applications SMP-12, 3.00 x 3.00 x 1.22 mm Product Features • • • • • • • • • • Functional Block Diagram Usable bandwidth 27 MHz High attenuation

OTAX

Abstract: 280-T001 SD-33476-181 SD-33476-161 MX150 USCAR 5 33486-1601
Contextual Info: =?OUND FOR NNECTOR .EARANCE B23 ADDED DRAFT DIRECTION SYMBOL 088 -25-11 LATCH HEIGHT AT VIEW OF BACK ANGLE B19 ^DDED ¿X 0.8D5 I»IP20 |a|b|AT BASE 088 BLADE TERMINAL5 BLADE TERMINAL5 088 B16 ADDED|-G-| 088 B14 REMOVED SHORTING BAR NOTE -04-10 088 B12 ADDED NOTE 9

DIODE B12

Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

Contextual Info: KEY POS. MARKING DATE CODE SEE TABLE #1 ri 1 _ _ j 7 i “ i L_ 1 CONTACT DFTATI NOTE 1. CONTACT PLATING CONTACT AREA: GOLD 0. If/m MIN. OVER PALLDIUM/NICKEL 9:1 1m MIN. TERMINAL AREA: GOLD UNDERPLATING: NICKEL 1 Aim MIN. 2. APPLICABLE CABLE O.D. : 3 - 3 . 5mm

Diode Mark B12

Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

ERB12-02

Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

microtherm b12

Abstract: b12e GB14536 BU103 cantherm U-103 THERMAL MOTOR PROTECTOR UL3398 B12 N 024 L310
Contextual Info: Thermal motor protector Temperature limiter Thermal cut-out B 12 13 Applications - Motors - Transformers - Coils - Electronics, sensors - Process Automation Benefits - Non-sensitive to current - High current rating up to 30A - Manifold executions - Special low current version

microtherm b12

Contextual Info: Thermal m otor protector Tem perature lim iter Thermal cut-out Applications - M o to rs - T ra n s fo rm e rs - Coils Benefits - Non-sensitive to c u rre n t - High c u rre n t ratin g up to 3 0 A - M anifold executions - Special low c u rre n t version Technical data

AWG20

Abstract: EN 60730 VDE THERMAL MOTOR PROTECTOR EN 50155 L320 transistor AWG18 L310 L350 L32* MARKING cantherm
Contextual Info: Thermal motor protector Temperature limiter Thermal cut-out B 12 Applications - Motors - Transformers - Coils - Electronics, sensors Benefits - Non-sensitive to current - High current rating up to 30A - Manifold executions CANTHERM Technical data control type

DIODE B12

Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
Contextual Info: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.

Contextual Info: P 0 S .1 3 m 1 8 . 6 6 17.07 2 -R 1 .6 i"- NOTE 1.CONTACT SEQUENCE CONTACT POS.No. 1,15 O TH ERS U L 3.8 2.9 &8 NOTHING 1 2 3 B B1 B2 B3 ± 0 ,0 5 . 4 3L3 I I I I A+mv 2 .4 RECOMMENDED P.C.B. LAYOUT 3 LTR. DATE MARKING I NOTE 3 APPLICABLE FEMALE CONNECTOR

U211

Abstract: 617 connector 7201J1ZQE2 B-23 U213 U411 U415 7401J J92-J93
Contextual Info: 7000 Series Rocker and Lever Handle Switches B 7201J1ZQE2 7101J62ZQE22 7301J1AV2BE2 7201J1V61BE2 models available, see page B-4. Easy Build-A-Switch Below is a complete listing of available options for 7000 SERIES ROCKER AND LEVER HANDLE SWITCHES. Build-A-Switch

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

DIODE B12 51

Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
Contextual Info: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

CJ1H-CPU65H

Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
Contextual Info: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O

0118 transistor

Abstract: 385 b12 TSA5888 TSA5888CY
Contextual Info: TSA5888 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -40V IC -5.5A VCE SAT Features -175mV @ IC / IB = -3.5A / -175mA Ordering Information Adoption of FBET and MBIT processes. High current capacitance.

TSM4513D

Abstract: P-Channel mosfet 25v sop8 mosfet marking B12
Contextual Info: TSM4513D Complementary Enhancement MOSFET SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 N-Channel 20 P-Channel -20 ID (A) 14 @ VGS = 4.5V 6 16 @ VGS = 2.5V

npn 600v to92

Abstract: NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma TSC966cw A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92
Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ●