B3045 Search Results

Contextual Info: MOTOROLA Order this document by MBR3045ST/D SEMICONDUCTOR TECHNICAL DATA MBR3045ST Advance Information SWITCH MODE Power R ectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:

B3045

Abstract: MBR3045PT 2N2222
Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

b3045g

Abstract: mbr3045 diode MBR3045 b3045g aka
Contextual Info: MBR3045 SWITCHMODE Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for • • • • • Parallel Operation at Full Rating 45 V Blocking Voltage 30 A Total 15 A Per Diode Leg Low Forward Voltage Drop

b3045g

Abstract: mbr3045 diode B3045 How to test b3045g MBR3045 MBR3045STG b3045g aka 418D MBR3045ST MBRB3045CT
Contextual Info: MBR3045 SWITCHMODE Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for • • • • Parallel Operation at Full Rating 45 V Blocking Voltage 30 A Total 15 A Per Diode Leg Low Forward Voltage Drop

2sc793-y

Abstract: STC1024 2sc793y 2SC793 180T2 2sc246 2SC101 STC1104 B3459 STC1101
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

schottky rectifier motorola mbr

Abstract: 3045wt B3045
Contextual Info: M OTOROLA Order this document by MBR3035WT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR3035WT MBR3045WT . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

B3045

Abstract: MBR3045ST
Contextual Info: MOTOROLA Order this document by MBR3045ST/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR3045ST Motorola Preferred Device . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features:

M3015

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3035WT MBR3045WT S w itc h m o d e P o w e r R ectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode C onstruction — Terminals 1 and 3 May Be C onnected For Parallel Operation At

B3045

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3045ST Advance Information SWITCHMODE Power Rectifier Motorola Preferred Device . . . using the Schottky Barrier principle with a platinum barrier metal. This s ta te -o f-th e -a rt device has the following features:

B3045

Abstract: 1N5817 2N2222 2N6277 MBR3045PT
Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

Contextual Info: SB3020FCT SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts 30 Amperes CURRENT FEATURES 0.112 2.85 0.100(2.55) • Exceeds environmental standards of MIL-S-19500/228 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) 0.189(4.8) 0.165(4.2) 0.272(6.9) 0.248(6.3)

B3045

Abstract: 2N2222
Contextual Info: MBR3045WT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

B3045

Abstract: 2N6277
Contextual Info: MBR3045WT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

b3045g

Abstract: tb4f MBR3045STG b3045g aka
Contextual Info: MBR3045ST, B3045CT-1 SWITCHMODE Power Rectifier Features and Benefits •ăDual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating http://onsemi.com •ă45 V Blocking Voltage •ăLow Forward Voltage Drop

tj-2 94v

Contextual Info: SB3020FCT SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts 30 Amperes CURRENT FEATURES • Exceeds environmental standards of MIL-S-19500/228 0.189 4.8 0.165(4.2) 0.272(6.9) 0.248(6.3) 0.406(10.3) 0.381(9.7) 0.112(2.85) 0.100(2.55) • Plastic package has Underwriters Laboratory

transistor 2SC243

Abstract: 2sc101 TRANSISTOR 182T2 STC1102 180T2 2SC793Y 2SC101 185t2 2SC793 ST7130
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

B3045

Abstract: MBR3045ST
Contextual Info: MBR3045ST Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected

b3045g

Abstract: B3045 b3045g aka B3045CTG B3045CT 418D MBR3045STG MBR3045ST MBRB3045CT-1 MBRB3045CT-1G
Contextual Info: MBR3045ST, B3045CT-1 SWITCHMODE Power Rectifier Features and Benefits •ăDual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating •ă45 V Blocking Voltage •ăLow Forward Voltage Drop •ă175°C Operating Junction Temperature

B3045

Contextual Info: MOTOROLA Order this document by MBR3045ST/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR3045ST SW ITCH MODE Pow er R ectifier Motorola Preferred Device . . using the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:

B-304

Abstract: SB3045FCT 48 06 ng
Contextual Info: SB3020FCT SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts 30 Amperes CURRENT FEATURES 0.112 2.85 0.100(2.55) • Exceeds environmental standards of MIL-S-19500/228 0.406(10.3) 0.381(9.7) 0.189(4.8) 0.165(4.2) 0.272(6.9) 0.248(6.3) • Plastic package has Underwriters Laboratory

B3045

Abstract: MBR3045PT
Contextual Info: MOTOROLA MBR3035PT MBR3045PT SEMICONDUCTOR TECHNICAL DATA MBR3045PT Is a Motorola Preferred Device Switchmode Power Rectifiers . . . using the S cho ttky B arrier p rincip le w ith a platinum b a rrie r m etal. T h ese state -o f-the -a rt SCHOTTKY BARRIER

B3045

Abstract: 1N5817 2N2222 2N6277 MBR3045WT
Contextual Info: MBR3045WT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

63AB

Abstract: 3035C 3050C 3045C B3020CT SRB3020 B3050C B3045CT
Contextual Info: SRB3 0 2 0 C T THUR SRB3 0 6 0 C T TO -2 6 3 AB 0 . 1 9 0 4 . 8 3 Pla stic p a c ka g e Und e rwrite rs La b o ra to ry Fla m m a b ility C la ssific a tio n 9 4 V-0 0 . 1 6 0 (4 . 0 6 ) 0 . 4 2 0 (1 0 . 6 7 ) 0 . 0 5 5 (1 . 3 9 ) 0 . 3 8 0 (9 . 6 5 ) Dua l re c tifie r c o nstruc tio n, p o sitive c e nte r ta p

b3045g

Abstract: SCHOTTKY BARRIER RECTIFIER aka How to test b3045g 418D MBR3045ST MBR3045STG MBRB3045CT MBRB3045CT-1
Contextual Info: MBR3045ST, B3045CT-1 SWITCHMODE Power Rectifier Features and Benefits • Dual Diode Construction — Terminals 1 and 3 May Be Connected • • • • for Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop 175°C Operating Junction Temperature