B3B7255 Search Results

2N6116

Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Contextual Info: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes

HP6218A

Abstract: MFOE108F MC10116 application MC10116 MFOE107F Q1 sym 602 motorola application notes 227240-3 SIECOR Fiber Optic cable MOTOROLA FIBER OPTIC
Contextual Info: MOTOROLA SC m DIODES/OPTO & 0 ä ik > T Ö R Ö lb D b3b7255 QQ337Qb b I MOT? L Ä MF0E107F MF0E108F » S E M IC O N D jU C irQ R S J § O • -^ g ^ ^ ^ T -4 1 -0 7 P.Q5SOXp091g-i PHOENIX^ARÎZoFTA'SSQâS^j^^ ^ ^ FIBER OPTICS A IG aA s FIBER O PTIC EM ITTER

MOC8060

Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter

2N3866 MOTOROLA s parameters

Abstract: MPS3866A 2n3866A 2C3866 2N3866 2N3866 MOTOROLA
Contextual Info: MOTOROLA s c -CDIODES/OPTOÏ — 34 de |b3b7255 003ÔD51 î I 6 3 6 7 2 5 5 MOTOROLA SC ' - • 34c D I O D E S / O PTO> 3805 1 D v SILICON RF tRA N SISTO R DICE (continued T ~ 3 /- 2 3 2C3866 DIE NO. — NPN LINE SOURCE — RF502.151 This die provides performance equal to or better than that of

2N1595 MOTOROLA

Abstract: 2n1595
Contextual Info: MOTOROLA SC DIODES/OPTO tiME D • b3b7255 OOäSTGl M0T7 2N 1595 thru S ilico n Controlled Rectifiers 2N 1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA//iA signal or detection circuits.

Contextual Info: M O T O R O L A SC D I O D E S / O P T O b4 D b3b7255 GQbflEbfl 7 • M0T7 T -4 1 -5 0 r,;:0D?302 F IB E R P T iC S P H O T O D A R L IN G T O N T R A N S IS T O R FO R FIB ER O P T IC S Y S T E M S N P N S IL IC O N PHOTO D A R L IN G T O N T R A N S IS T O R

1n3903 diode

Abstract: MR1386 1N3903 PIC18f13k50 example codes tmr2 motorola opto n3903 1N3899 1N3901 1N3902 1N3999
Contextual Info: MOTOROLA SC DIODES/OPTO b4E Í b3b7255 MOTOROLA DGÛL. 231 147 1N3899 thru 1N3903 MR1386 SEMICONDUCTOR TECHNICAL DATA 1N3901 and MR1386are Motorola Preferred Devices D e s ig n e r s D a ta S h e e t FAST REC O VERY POWER R EC TIFIE R S STUD M O U N TE D

Contextual Info: MOTOROLA SC -CDIODES/OPTOJ i 6367255 M OT O R O L A Im SC ¡>F|b3b7255 D03ÖS4B h |~~ D IO D E S /O P TO 34C 38243 D 7^ 0 3 - C f SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high­

MR2400F

Abstract: MR2401 MR2402F 1N4001 1N4933 IN4723 MR2404F MR2406F S1N4001 ITT 1N4001
Contextual Info: MOTOROLA SC D I O D E S / O P T O bM E » b3b7255 GGflti4l43 7 20 • MOT ? MR2400F MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA MR2406F MR2402F and MR2406F are Motorola Preferred Devices FAST RECOVERY TAB-MOUNTED FAST RECOVERY POWER RECTIFIERS POWER RECTIFIERS

DIODE MOTOROLA 2101

Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
Contextual Info: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.

2N4893

Abstract: 2N4894 UJT 2N4871 UJT 2N4852 90VSS transistor 2n4871 ujt 2n2647 2N4949 2n4852 ujt transistor
Contextual Info: 34 M O T O R O L A SC O I O D E S / O P T O J S 6367255 MOTOROLA SC De | b3b7255 0G3Ö1S0 D DIODES/OPTO 34C 38150 D ^ -3 5 -3 j SELICON THYRISTOR DIE (continued) die n o . 2C4871 LINE SOURCE — DTL58 Device assembled from this die type are similar to the fol­

2N3440 MOTOROLA

Abstract: MM421 MOTOROLA transistor 413 MM420 SILICON SMALL-SIGNAL DICE
Contextual Info: MOTOROLA SC 34 -CDIODES/OPTO} D " I b3b7255 34 C □037105 37982 T - i S '- t s ' SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C3439 DIE NO. — NPN LINE SOURCE — DSL242 & This die provides performance simifar to that of the following device types:

1N4726A

Abstract: zener diode 1N4726a motorola 1N4740A 1N4733A motorola 1N4726 MOTOROLA 1N4751A Motorola 1N4739A motorola 1N4761A 1N4734A Motorola 1N4730A
Contextual Info: 31E J> MOTOROLA SC DIODES/OPTO B b3b7255 OOâBôlQ 1N4728Athru 1N4764A E3MOT? T-Î1-13 ‘ E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25°C unless otherwise noted) VF = 1.2 V Max, If = 200 mA for all types. Nominal Zener Voltaqe Maximum Zener Impedance (Note 4)

MURD620CT

Abstract: MURD610CT
Contextual Info: MOTOROLA SC DIODES/OPTO b4E D • b3b7255 GDf i b S3 7 30ñ hot? MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed fo r use in sw itching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the follow in g features:

2N6078

Contextual Info: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage

Contextual Info: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA S ilico n Tim ing Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TTL to Differential PECL Translator MC10ELT20 MC100ELT20 The MC1OELT/100ELT20 is a TTL to differential PECL translator. Because PECL Positive ECL levels are used only +5V and ground are required. The small outline 8-lead SOIC package and the single gate of

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage VCEO -350 Vdc Collector-Base Voltage v CBO -350 Vdc Emitter-Base Voltage Ve b o -6.0

T2T TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is

motorola an569

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Rating Value Unit Vdc Collector-Emitter Voltage VCEO -45 Emitter-Base Voltage

Contextual Info: MOTOROLA Order this document by MURF820/D SEMICONDUCTOR TECHNICAL DATA Advance Information MURF820 SWITCHMODE Power Rectifier Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N-Channel — Depletion MAXIMUM RATINGS Rating D r a in -G a te Voltage G a te -S o u rc e Voltage Symbol Value Unit VD G -3 5 V dc VG S -3 5 V dc G ate C urrent 'g 50 m Adc Total Device D issipation @ T a = 25°C