B3B725M Search Results

2N6432

Abstract: 2N6432 MOTOROLA 2N6433
Contextual Info: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage

Contextual Info: M O TO RO LA SC X ST RS /R F UbE D • b3b725M O O ^ b M b T ■ flOTfe-F-JÖ'^S MOTOROLA SEMICONDUCTOR ■ h h h h m h h i TECHNICAL DATA DUO PRELIMINARY DATA mini MMCM4261HXV/HS (SINGLE) MD4261FHXV/HS (DUAL) MQ4261 HXV/HS (QUAD) Discrete Military Operation

X332

Abstract: 044VH1 14J7 mje6220 D44VH7 d44vh10 d44vh 104 cev D45VH4
Contextual Info: MOTOROLA SC XSTRS/R 1EE D I F b3b725M □DflM'lbS 7 | NPN MOTOROLA D44VH Series SEMICONDUCTOR PNP TECHNICAL DATA D45VH Series 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS These complementary silicon power transistors are designed for

MJH16010A

Abstract: MJ16010A AMs03 p6302 TIS100 MJ1601 T1N2 100CC AN952 baker
Contextual Info: MOTOROL A SC 1EE 0 I b3b725M □OäSEll 5 | XSTRS/R F 7-33-lS MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA Designer's Data Sheet POWER TRANSISTORS 15 AM PERES 500 VOLTS 125 and 175 WATTS NPN Silicon Power Transistors 1 kV Switchmode III Series These transistors are designed for high-voltage, high-speed, power switching in

TRW63601

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b725M 0000451 T -'b 'b -V l T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed

Cross Reference power MOSFET

Abstract: motorola Cross Reference
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b725M 0CH32Q2 D m n 0 1 l> ~ p 3 7 '0 ( Multiple Chip Products (continued) CASE 809-02 CASE 816-02 Table 14 — TMOS Power MOSFET Modules Conditions Max. Resistive Switching Max Max vq ss Dual 50 450 MT50B2Y45 Dual 50 450 MT50BY45

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

MRF515

Abstract: motorola MRF515
Contextual Info: I MOTOROLA SC XSTRS/R F MbE P • b3b725M MOTOROLA DGTH7n T ■ SEMICONDUCTOR TECHNICAL DATA T ■ flO T b 5 3 - Q 5 MRF515 The R F L in e 0.75 W - 470 M H z NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R HIGH F R EQ U E N C Y T R A N SIST O R

MTPSP25

Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage,

MTA5N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and

2N5108

Contextual Info: I 4bE D L3b72S4 I OCmOfc.2 4 • M 0 ïb T : 3 3 " Û 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5108 MOTOROLA SC XSTRS/R F T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applica*

PT9734

Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Contextual Info: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.

MJH16018

Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Contextual Info: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc­

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

552 MOSFET TRANSISTOR motorola

Abstract: 552 transistor motorola Z71A
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w

Contextual Info: 4bE D b3b?ss4 00^2^73 b • rioTbT:3h23 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C5836HV Chip NPN Silicon High-Frequency Transistor Dm mim Discrete Military Operation . . .designed primarily for use in fast current-mode switching circuits in military and

BUZ11 motorola

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF610 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed pow er switching applications such as switching regulators, converters, solenoid and relay drivers.

Contextual Info: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1

IC 7443

Abstract: 2N6211 TC 3162 2N6213 motorola 2N6212 2N6213
Contextual Info: MOT ORCL A SC XSTRS/R F ÎHE D | b3b?2S4 □QflMbQb 1 | 2N6211 2N6212 2N6213 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE MEDIUM-POWER HIGH-VOLTAGE PNP POWER TRANSISTORS POWER TRANSISTORS . . . designed fo r high-speed switching and linear am plifier applications

irf510 Motorola

Abstract: irf510 ir
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF510 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, con­ verters, solenoid and relay drivers.

BFR96

Abstract: BFR96 TRANSISTOR transistor bfr96
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers