B40 DIODE Search Results

B80 c1500 bridge rectifier

Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
Contextual Info: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247

5v 10mA reed relay

Abstract: B40-0002 B40-0003
Contextual Info: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter

B40-0002

Abstract: B40-0003 J-STD-020B IC TESTERS RS436
Contextual Info: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter

US Relays and Technology

Abstract: 5 pin relay 12vdc 5v 10mA reed relay relay 12vdc with diode 5 pin relay 12vdc free download relay dry reed rs 12 relay B40-0002 B40-0003 static relay coto
Contextual Info: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter

Contextual Info: F81QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier

Contextual Info: F84QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier

Contextual Info: F82QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier

Contextual Info: F83QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier

10SP005

Abstract: bridge B250 C5000 B125 bridge diode "Bridge Rectifiers" b380 b40 bridge rectifier B250 Bridge Rectifiers KBL08 diode bridge B250 bridge diode B80 diode zener diode cross reference
Contextual Info: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SIN G LE PHASE BR ID G E R E CT IFIERS continued 3.0 IMA) PGK TYPE KBPC1 VRRM (volts) f 4.0 6.0 5.0 BC KBU KBPC6 50 KBPC1005 B40 C3700/2200 KBL005 ff KBU4A RKBU4A B40 C5000/3300 KBU 6A# KBPC6005 RKBPC6005

RKBU4B

Abstract: B 80 C3700 - 2200 bridge B250 C5000 KBU diode bridge KPBC10 gp20 diode B80 smd diode DD0333S kbu8k 304 GENERAL INSTRUMENT b80
Contextual Info: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SINGLE PHASE BRIDGE RECTIFIERS continued PGK T Y P E 4.0 3.0 IM A ) 5.0 BC KB PC1 6.0 KBU KB PC6 f VRRM (volts) 50 K B P C 10 0 5 B40 C 3 700 /2200 K B L0 0 5 ff KBU4A RKBU4A B40 C 5000/3300 KBU6A# KB PC6005

oxygen sensor operational amp

Abstract: amplifier 5.1 surrounding system circuit diagram Capacitive layout LMC662 equivalent spice model pressure sensor sp 20 Rail to rail operation amplifier in DIP case LMC6492 LMC6492AEM LMC6492AEMX LMC6492AEN
Contextual Info: LMC6492 Dual LMC6494 Quad CMOS Rail-to-Rail Input and Output Operational Amplifier General Description Features Typical unless otherwise noted The LMC6492 LMC6494 amplifiers were specifically developed for single supply applications that operate from b40 C

Contextual Info: ISOCOM COMPONENTS ISPB40 DESCRIPTION The ISPB40 is a 1-Form B solid state relay in a space saving 4 pin DIL package. The ISPB40 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. B40 FEATURES •

B250 Bridge Rectifiers

Abstract: transistor C1000 b40 bridge "Bridge Rectifiers" b380 b40 bridge rectifier BRIDGE B380 C1000 B250C1000 B380C1000 B250 bridge diode
Contextual Info: B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

b380/340-11

Abstract: B380/340 B380/340-35
Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com B40 - B380/C1500R SILICON BRIDGE RECTIFIERS

C1000

Contextual Info: B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

"Bridge Rectifiers" b380

Abstract: B250 bridge diode B250 Bridge Rectifiers bridge B125 B125 bridge diode b380 B125 B380C1500R C1500R BRIDGE B380
Contextual Info: B40 - B380/C1500R SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.5 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

B250 Bridge Rectifiers

Abstract: C1000 transistor C1000 B125 B125C1000 B250C1000 B380C1000 B40C1000 B80C1000 B80-C1000
Contextual Info: B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

B250 Bridge Rectifiers

Abstract: b40 c bridge "Bridge Rectifiers" b380 B250 bridge diode B125 B380 B380C1500R C1500R
Contextual Info: B40 - B380/C1500R SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.5 Amperes 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop

BAS70-01

Abstract: bas70 SOD123 SMD Schottky
Contextual Info: N AMER PHILIPS/DISCRETE blE ]> bbSBTBl Philips Semiconductors DOEbTbS Preliminary specification S c h o ttk y b arrier diode FEATURES B40 « A P X BAS70-01 QUICK REFERENCE DATA • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage

capacitor 106 16K

Abstract: dvd sled motor
Contextual Info: 1/4 STRUCTURE PRODUCT NAME ： ： 4ch DVD Driver for Car Audio MODEL NAME ： BD8231EFV ◎FEATURES： Silicon Monolithic Integrated Circuit ・3-phase brushless spindle motor driver, 2ch for actuator, 1ch for shared Sled/Loading total 4ch . ・HTSSOP-B40 package which has large power dissipation is adopted.

Contextual Info: . Dimensions in mm ISPB40 1 2 6 5 3 4 6.4 7.62 B40 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 400V l High Isolation Voltage (3.75kVRMS ) l

Contextual Info: SGS-1H0MS0N IMOigœiILliera *® S T B 7 N B 40 N - CHANNEL ENHANCEMENT MODE _PowerMESH MOSFET PRELIM IN ARY DATA TYPE STB7N B40 . • . . . . V dss RDS on Id 400 V < 0.9 Q. 7 .0 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: . Dimensions in mm ISPB40 1 2 6 5 3 4 6.4 7.62 B40 7.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Load Voltage 400V l High Isolation Voltage (3.75kVRMS ) l

6MBI50J-120

Abstract: F4956 DIODE M4A F495
Contextual Info: This Material Copyrighted By Its Respective Manufacturer 2. 3. Equivalent C irc u it of Module Equivalent C irc u it -04- +o- -OE ,C O GICH G3CH BtO — 630— C50—I C2CHI ' ' C4CH l B20- B40- -O O 1V a E50- -o . gscH Current Control C ircu it - ù w I