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    B44 TRANSISTOR Search Results

    B44 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B44 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IFN5114

    Abstract: IFN5115 IFN5116 B44 transistor PJ99 SMP5114 SMP5115 SMP5116
    Text: Databook.fxp 1/14/99 12:22 PM Page B-44 B-44 01/99 IFN5114, IFN5115, IFN5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF IFN5114, IFN5115, IFN5116 IFN5114 IFN5115 IFN5114 IFN5115 SMP5114, SMP5115, IFN5116 B44 transistor PJ99 SMP5114 SMP5115 SMP5116

    IS-98-A

    Abstract: UCSP4 marking B44
    Text: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an


    Original     		PDF MAX2206) MAX2205/MAX2207/2208) MAX2205 MAX2208 MAX2208 800MHz MAX2207) MAX2205/MAX2208) IS-98-A UCSP4 marking B44

    CJ1H-CPU65H

    Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
    Text: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O


    Original     		PDF B-108 CJ1G-CPU45H, CJ1H-CPU65H CJ1H-CPU66H CJ1G-CPU42H CJ1G-CPU43H CJ1G-CPU44H CJ1G-CPU45H CJ1M-CPU22 CJ1M-CPU12 CJ1W-IC101 CJ1M-CPU13 cj1w-oc211

    transistor B42

    Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SB1475 500mA -60mV -100mA transistor B42 smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking

    B34 transistor

    Abstract: 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R32C
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER B34 transistor 50MHZ CX20202A-1 CXD1178Q CXD2303Q R32C

    C40C

    Abstract: b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R30A
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER C40C b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303Q R30A

    CXD2303Q

    Abstract: q32b TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ R30A TRANSISTOR A72 VR50
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER CXD2303Q q32b TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q R30A TRANSISTOR A72 VR50

    TRANSISTOR A64

    Abstract: transistor bb3 VR30A A44 E hole ic C40C Encoder photo IC sony a34 b24 b03 crt bw diagram TRANSISTOR A63
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER TRANSISTOR A64 transistor bb3 VR30A A44 E hole ic C40C Encoder photo IC sony a34 b24 b03 crt bw diagram TRANSISTOR A63

    TP30A

    Abstract: TRANSISTOR b72 mount transistor A55 Q32A C31B C40C CXD2303Q B34 PHOTO IC TRANSISTOR A63 TRANSISTOR A64
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ CXD2303AQ. TP30A TRANSISTOR b72 mount transistor A55 Q32A C31B C40C CXD2303Q B34 PHOTO IC TRANSISTOR A63 TRANSISTOR A64

    marking 68g

    Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
    Text: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration


    OCR Scan     		PDF BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H 67series marking 68g B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H

    BCW67A

    Abstract: No abstract text available
    Text: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38


    OCR Scan     		PDF BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67A, BCW67B, BCW67A

    stk audio power amplifiers

    Abstract: D556 stk 80 w
    Text: TTETSa? rZ J m 7# DD 4L .0 47 b44 • SGTH S G S -T H O M S O N [ » ^ » [IC T IiM O Û S STK 4 N3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30L . ■ . . ■ V dss RDS(on Id 300 V < 1 .4 Q 4 .2 A TYPICAL RDS(on) = 1.25 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STK4N30L OT-82 OT-194 7TST237 G04b0S3 stk audio power amplifiers D556 stk 80 w

    if3601

    Abstract: No abstract text available
    Text: B 34 9-97 IF3601 N -C H A N N E L SILICO N JUNCTIO N FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings = TA at 25"C Reverse Gate Source Voltage & Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation


    OCR Scan     		PDF IF3601 NJ3600L IF3801 GGQQ754 if3601

    Untitled

    Abstract: No abstract text available
    Text: CSA1220, CSA1220A CSA1220,1220A PNP PLASTIC POWER TRANSISTORS Complementary CSC2690, 2690A Audio frequency and High frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. "V A 7 .4 7.8 P u B 10.5 10.8 C 2.4 D 0.7 2.7 0.9


    OCR Scan     		PDF CSA1220, CSA1220A CSA1220 CSC2690, 0QQ1E30

    B44 transistor

    Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan     		PDF IRF840 IRF840 fcj3b7254 G1G2742 B44 transistor fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44

    transistor c 5855

    Abstract: TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and


    OCR Scan     		PDF FO-41B PTB23006U 711002b 711062b 00T433b FO-41B. transistor c 5855 TRANSISTOR LIST 417 TRANSISTOR npn epitaxial planar high voltage transistor epitaxial B44 transistor use of 417 TRANSISTOR

    transistor c 5855

    Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C


    OCR Scan     		PDF PTB23006U FO-41B 7110fl2b D0T433b FO-41B. ocma37 transistor c 5855 npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44

    transistor 2TH

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)


    OCR Scan     		PDF BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH

    Untitled

    Abstract: No abstract text available
    Text: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 0D30b BUK456-1000B O220AB BUK456-1000IB bbS3T31

    Xr 1075

    Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
    Text: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic


    OCR Scan     		PDF BFG92A; BFG92A/X; BFG92A/XR BFG92 OT143 BFG92A BFG92A/X MSB014 OT143. Xr 1075 BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320

    2SC3814

    Abstract: NE0900-07 2SC3816 2SC3815
    Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.


    OCR Scan     		PDF NE0900-07 NEM0900-07 2SC3814 2SC3816 2SC3815

    fccj

    Abstract: BUK456-1000B TRANSISTOR na 44 B44 transistor
    Text: N AUER PHILIPS/DISCRETE bTE D • bbS3T31 D03Db^S TT1 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 D03Db BUK456-1000B -T0220AB fccj BUK456-1000B TRANSISTOR na 44 B44 transistor

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF

    BB453

    Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
    Text: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V


    OCR Scan     		PDF BF545Ai BF545B5 BF545C BF545A) BF545A BF545A BF545B MBB471 BB453 BF5458 D103D BF545C MSB003 UBB467 SFs SOT23 dk transistor