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    B5Q1130 Search Results

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    1n52328

    Abstract: 1N9656 1N52308 1M5232B 1N959B LN747 1N746A 1N747A 1N748A 1N750A
    Text: böE D • b5Q1130 0D3T51G Tlfl ■ NSC5 NATL SEniCOND DISCRETE z* V* (Volts) Tolerance 5% 'r r (mA) (a) •r (MÄ) V (Volts) Tolerance 5% (lit* ) Zz (0 ) (UA) 3.3 1N746A 20 28 10 3.3 1N5226B 20 28 25 3.6 1N747A 20 24 10 3.6 1N5227B 20 24 15 3.9 1N748A 20


    OCR Scan     		PDF DO-35 b5G1130 0D3T51G 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N752A 1n52328 1N9656 1N52308 1M5232B 1N959B LN747

    NDT456P

    Abstract: 0011914
    Text: J u ly 1 9 9 6 N ational S e m i c o n d u c t or " NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT456P OT-223 bS01130 004D13H NDT456P 0011914

    2N4124 national

    Abstract: 2N3904 SOT-23 2N3904 2N4124 MMBT4124
    Text: 2N4124 / MMBT4124 D iscrete P O W E R & S ig n a l T echnologies National S e m ic o n d u c t o r '“ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to


    OCR Scan     		PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 national 2N3904 SOT-23 2N4124 MMBT4124

    NDT452AP

    Abstract: No abstract text available
    Text: June 1996 National Semiconductor" NDT452AP P-Channel Enhancement Mode Field Effect Transistor Features General Description • -5A, -30V. RDS 0N1 = 0 .0 650 @ VGS = -10V RDS(0N1 = 0.1 n @ V GS = -4.5 V. These P-Channel enhancement mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDT452AP 065C1 OT-223 QGHQ10M NDT452AP

    "NPN Transistors" 2n3567

    Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
    Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40


    OCR Scan     		PDF 2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06