B6 DIODE SCHOTTKY Search Results

B6 DIODE schottky

Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT54WS Device Marking B6 TA = 25°C unless otherwise noted Parameter Value Units 200 mW Power Dissipation

smd diode code B6

Abstract: B6 DIODE schottky smd diode marking b6 smd diode B6 10V-dc CDBU0245-HF smd b6
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0245-HF RoHS Device Io = 200 mA V R = 45 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin/leadless package. 0.039(1.00) 0.031(0.80)

B6 DIODE schottky

Abstract: smd diode code B6
Contextual Info: SMD Schottky Barrier Diode CDBF0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current (I R =0.1uA typ.@V R =10V).

Contextual Info: SMD Schottky Barrier Diode CDBU0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.039(1.00) 0.031(0.80) -Low leakage current (I R =0.1uA typ.@V R =10V).

B6 DIODE schottky

Abstract: smd diode code B6
Contextual Info: SMD Schottky Barrier Diode CDBF0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current (I R =0.1uA typ.@V R =10V).

smd diode code B6

Abstract: B6 DIODE schottky smd diode marking b6 smd diode B6 SMD MARKING CODE 102 CDBF0245-HF smd marking code b6
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0245-HF RoHS Device Io = 200 mA V R = 45 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. 0.051(1.30) 0.043(1.10)

Contextual Info: SMD Schottky Barrier Diode CDBU0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.039(1.00) 0.031(0.80) -Low leakage current (I R =0.1uA typ.@V R =10V).

Contextual Info: SMD Schottky Barrier Diode CDBU0245 I o = 200 mA V R = 45 Volts RoHS Device Features 0603/SOD-523F -Designed for mounting on small surface. 0.071 1.80 0.063(1.60) -Extremely thin/leadless package. -Low leakage current (I R =0.1uA typ.@V R =10V). 0.039(1.00)

smd diode code B6

Abstract: B6 DIODE schottky CDBU0245 QW-A1033 smd diode marking b6 smd b6
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0245 RoHS Device Io = 200 mA V R = 45 Volts Features 0603(1608) Designed for mounting on small surface. 0.071(1.80) 0.063(1.60) Extremely thin/leadless package. Low leakage current (I R =0.1uA typ.@V R =10V).

SMD LD3

Abstract: marking code LD3 DIODE SMD MARKING 5C JV3 diode A2 DIODE SMD CODE MARKING smd diode marking code jv3 SMD jv3 marking code a2 SMD diode jv3 Marking smd diode marking code a2
Contextual Info: Spec. No. : C302N3-L Issued Date : 2003.04.14 Revised Date : 2005.11.08 Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.

Contextual Info: SMD Schottky Barrier Diode CDBF0245 I o = 200 mA V R = 45 Volts RoHS Device Features 1005/SOD-323F - Designed for mounting on small surface. - Extremely thin / leadless package. 0.102 2.60 0.095(2.40) - Low leakage current (IR=0.1uA typ.@VR=10V). - Majority carrier conduction.

CDBF0245-HF

Contextual Info: SMD Schottky Barrier Diode CDBF0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) - Designed for mounting on small surface. - Extremely thin / leadless package. - Low leakage current (IR=0.1uA typ.@VR=10V).

CDBU0245-HF

Contextual Info: SMD Schottky Barrier Diode CDBU0245-HF I o = 200 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F - Designed for mounting on small surface. - Extremely thin/leadless package. 0.071 1.80 0.063(1.60) - Low leakage current. (IR=0.1uA typ.@VR=10V)

Contextual Info: SMD Schottky Barrier Diode CDBU0245 I o = 200 mA V R = 45 Volts RoHS Device Features 0603/SOD-523F - Designed for mounting on small surface. - Extremely thin/leadless package. 0.071 1.80 0.063(1.60) - Low leakage current. (IR=0.1uA typ.@VR=10V) - Majority carrier conduction.

LBAT54ALT1G

Abstract: B6 DIODE schottky LBAT54ALT3G B6 MARKING DETECTOR AND SWITCHING B6 DETECTOR AND SWITCHING diode B6
Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

diode a316

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus Transceiver MC74VHCT245A The M C74VHCT245A is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

Contextual Info: ON Semiconductort MC74VHC245 Octal Bus Transceiver The MC74VHC245 is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

HN2S01F

Abstract: HN2S01FU 12T1
Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA

FCH30A06

Contextual Info: SCHOTTKY BARRIER DIODE FCH30A06 30A / 60v 3.1 .122) FEATU RES o T0-220AB Fully Molded ODual Diodes - Cathode Common o Low Forw ard V oltage Drop O H igh Surge Capability 0 30 V olts through 60 Volts T ypes Available O Tj = 150°C operation FCH30A. <1

DETECTOR AND SWITCHING diode B6

Contextual Info: BAT54ALT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: ON Semiconductort Octal Bus Transceiver The MC74VHCT245A is an advanced high speed CMOS octal bus transceiver fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

bar43a

Contextual Info: BAR43 Series BAR43 / BAR43A / BAR43C / BAR43S Elektronische Bauelemente Plastic-Encapsulate Schottky Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Power Dissipation o PD : 350mW Tamb= 25 C A L Top View 3 V

BAT54

Abstract: BAT54A
Contextual Info: Zowie Technology Corporation 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount