B72M540 Search Results

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

MSM5117800

Abstract: TSOP28-P-400
Contextual Info: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

msc23136c

Abstract: DS1060 MSC23136
Contextual Info: O K I Semiconductor MSC2 3 1 3 6 C/CL-XXBS1 0 /P S 10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-w ord x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in SOJ

Contextual Info: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process

514100A

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
Contextual Info: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.