B8888 Search Results

ncl016

Contextual Info: •gg P R E L IM IN A R Y ^^^B88888888888888888888SSi^ Ultra37192V UltraLogic 3.3V 192-Macrocell ISR™ CPLD — tPD = 12 ns Features — ts = 7 n s • 192 macrocells in twelve logic blocks • IEEE standard 3.3V operation — tco = 6.5 ns Product-term clocking

LCD 1620

Abstract: TMP47C1220F U 1620 GC P10 1r led display 47C1620 kss 213 c QFP80-P-1420-0 TLCS-470 TMP47C1620F TMP47P1620VF
Contextual Info: TOSHIBA TMP47C1220/1620 CMOS 4-BIT MICROCONTROLLER TMP47C1220F, TMP47C1620F The 47C1220/1620 are high speed and high performance 4-bit single chip microcomputers, with large capacity ROM and RAM, based on the 47C620 / 820 TLCS-470 series . PART No. ROM TMP47C1220F

Contextual Info: GM71C17803C GM71CS17803CL Sem icon Co. .Ltd. 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71C S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71C(S)17803C/CL has realized higher density, higher performance and various

receiver sat pro

Contextual Info: >1MCC DEVICE SPECIFICATION QUAD FIBRE CHANNEL TRANSCEIVER S2076 GENERAL DESCRIPTION FEATURES • Functionally compliant with ANSI X3T11 Fibre Channel physical and transmission protocol standards. • 1062 MHz Fibre Channel operating rate -1/2 Rate Operation

AN2426

Abstract: GM71C16400AJ6 GM71C16400
Contextual Info: GM71C16400A LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CMOS DYNAM IC RAM Description Pin Configuration The GM 71C16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS

GM71C4256B

Abstract: MQ5A
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions fay utilizing advanced CMOS process technology.

Contextual Info: Contents Features. 1 Pin Assignm ent. 1 Pin

6A14

Abstract: TSOP8
Contextual Info: Features • Organization: 32,768 words x 8 bits • Single 3.3 ± 0.3V power supply • High speed - 12 / 1 5 /2 0 ns address access time - 3 /4 /5 ns output enable access time • Very low power consumption - Active: 198 mW max, 12 ns cycle - Standby: 3.6 mW max, CMOS I/O

AMI s1602

Abstract: s1602 MB8868A wls2 s1602 uart rr2c wlsi
Contextual Info: FU JITSU Advanced Products mm D O O C O A M D O O D O A October 1986 Edition 2.0 MOS Universal Asynchronous Receiver/Transmitter UART Description The Fujitsu MB8868/A is a programmable Universal Asynchronous Receiver/Transmitter (UART), fabricated with an

NM93CS46

Abstract: NM93CS56 NM93CS66 S-29U130A S-29U130ADFE S-29U220A S-29U220ADFE S-29U330A S-29UXX0A
Contextual Info: C o n te n ts Features . 1 Pin A s s ig n m e n t . 1 Pin F u n c tio n s. 1 B lo c k D ia g r a m . 2 Instruction S e t -,. 2

Contextual Info: PRELIMINARY DEVICE SPECIFICATION > 4 M C SONET/SDH/ATM OC-12 QUAD TRANSCEIVER FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications • Supports 622.08 Mbps OC-12 • Quad transmitter incorporating phase-locked loop (PLL) clock synthesis from low speed

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4 8 1 8 5 0 8M-bit Synchronous GRAM Description The ^PD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function

SED-1520AA

Abstract: sed1520d SED1520AA
Contextual Info: SEDI 520F/SED1521F CMOS DOT MATRIX LCD DRIVER • DESCRIPTION The SED1520 is a dot m atrix LCD driver LSI intended for display of characters and graphics. It generates LCD driving signals based on bit image display data supplied from an 8-bit or 16-bit m icrocom puter and stored in the

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402000CS/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

agpd capacitor cog 50v 0603

Abstract: b8888 IS555
Contextual Info: Multi-Layer Ceramic Chip Capacitors M CS • MCH • M C Series # M C S Series [Dry plated termination type Termination is dry plated employing a thin film process, featuring high deflection resistance, high thermal cycle resistance and high heat resistance. This process helps to obtain larger capacitance in a smaller size and to achieve higher density mounting.

GM71V17403

Contextual Info: GM71V17403C GM71VS17403CL Semicon Co. .Ltd. 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71V S 17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403C/CL has realized higher density, higher performance and

3 phase signal generator ic

Abstract: hall IC Q62702 ic signal generator
Contextual Info: Precise Measurement of Magnetic Thresholds of Differential Hall ICs with Specific Double Coil • Put the Hall IC with its centerline fitting parallel to the airgap of the core in central position • Connect Supply Voltage • Apply sinewave signal to the winding e. g. signal generator

Contextual Info: SN54LVT8996, SN74LVT8996 3.3-V 10-BIT ADDRESSABLE SCAN PORTS MULTIDROP-ADDRESSABLE IEEE STD 1149.1 JTAG TAP TRANSCEIVERS S C B S 6 8 6 -A P R IL 1997 Members of Texas Instruments Broad Family of Testability Products Supporting IEEE Std 1149.1-1990 (JTAG) Test Access

Contextual Info: Assembly lnstructions-C61 SMB Amphenol CRIMP TYPE ANGLE PLUGS & ANGLE BULKHEAD JACKS C ferrule Amphenol Number Connector Type Cable RG-/U crimp body assembly cap Hex Cavity for Outer Ferrule Die Set for Tool Handle 227-944 Stripping Dimensions, Inches mm

MEMS blood pressure sensor

Contextual Info: MLX90807/90808 Integrated Relative and Absolute Pressure Sensors Features and Benefits Application Examples 1 Compact monolithic single die solution 1 Absolute and Relative pressure sensors for different ranges 1 Fully programmable through the connector

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: TO SHIBA TMP47C1220/1620 CMOS 4-BIT MICROCONTROLLER TMP47C1220F, TMP47C1620F The 47C1220/1620 are high speed and high performance 4-bit single chip microcomputers, with large capacity ROM and RAM, based on the 47C620 / 820 TLCS-470 series . PART No. ROM TMP47C1220F

Optimax

Abstract: AH-39 Triax Corp SMTO-8 CAH-39 FPF-39
Contextual Info: TRIAX CORP/ OPTIHAX INC IflE D •■T15S724 0000*4 45 4 ■ T-i4-w-oi AH-39 10 to 2000 MHz TO-8 Cascadable Amplifier • H i g h Output: + 22.0dBm • High Third Order: + 32.0dBm • Wide Bandwidth: 10-2000 MHz • Various Package Options see phpto Surface Mounted (SMTO-8), Flatpack with flange (FPF),