BA 10 G 1R Search Results

25C20

Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
Contextual Info: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

W9968CF

Contextual Info: W9968CF JPEG USB DUAL MODE CAMERA CHIP W9968CF JPEG USB Dual Mode Camera Chip Publication Release Date: May 1999 -1Revision A2 W9968CF Revision History Revision Issue Date Comments A1 April, 1998 Formal release. A2 May, 1999 Supports USB Spec. Rev. 1.1. Changed bcdUSB and bcdDevice

Contextual Info: COPYRIGHT TRP connector ALL RIGHTS REVISIONS RESERVED p LTR DESCRIPTION c MATER I ALS : C T 1r H O L S I L G SL L RA ç c um 9 PHOR I 8APR2QI 3 RL APVD KZ NG o BRONZE um um 9 LL RGB M I N BOARLS: DWN c C um LOGO CHANGE LLAMMAL I N S E M I - BR um o DATE

531-40046

Contextual Info: R E V 1S I O N S 5 3 1 - 40046-3 NOTES: DRAW ING I . M A T E R I A L S AND F I N I S H E S : BODY = BR A S S , T I N P L A T E D CONTACT - PHOSPHOR BRONZE, I N S U L A T OR = P OL YP R OP Y L E NE TH 1RD ANGLE REV NO. PROJ. D E S C R 1P T I O N A <§ > B T I N PLATED

Philips 2222 021 17222

Abstract: 030 36109 philips 030 36229 Philips 021 LL capacitors Philips 2222 015 35689 capacitors Philips 031 aluminum electrolytic capacitors 2222 015 16229 38478 philips 031 18229 2222 042 PHILIPS
Contextual Info: Aluminum Electrolytic Capacitors Axial, Standard N . Vs, AS 030,031 j Axial Standard Miniature Axial Smallest Diameter U s efu l life S. Ñ A S M 021/ASD 117 S e rie s SN, NN, ASH 041,042,043 ASH-ELB 042,043 Axial Stan d a rd Axial Standard High Voltage Axial Standard High Voltage

Scans-048

Abstract: uebertrager aus dma he no Leipzig U e b e r s i c h t von g e b r a e u c h l ichvn englIschsprachlgen Abkuerzungen aus dar Unterhait rasistor
Contextual Info: SERVICE-M ITTEILUNGEN V E B IN O U 8 T R I EVER T R IE B R U N D F U N K U N O F E R N S E H E N i . \ AUSGABE: 1 , i r :> 1r a d i o - t e l e v i s i o n \ 1986 S e it « 6 - 8 1 - 1 2 A b k u e r z u n g s v e r z e l e h n I • E n g l i s c h <— > D e u t s c h

ba3920

Abstract: BA 3922 BA3928 BA3930 9702FS 9329l BA3922 ba 243 rf 4S584 LZ 99
Contextual Info: IUHDU I l ZLV ZLl 8dOS/8dia BdOS ° 4 - —V Wl 951 —V ¥ P09fr 8SM-dOS 8Sdia (P00e)«dl0->IS £. _ ± <, 0\/ 0z zv 9£ 9‘0 9‘0 (A) mmm* (A) i/ a m # 9 6* 96> 9 9 (AlBfcCf m (A) 9 001 8 x >18 OV 9 001 8 x >12 (VUi)&^ia (A) 3 ra & * (su)xbw 01 (V '0 # a » £

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

Contextual Info: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

NT56V1680A0T

Abstract: nt56v168
Contextual Info: Preliminary 16 MEG: x4 ,x8 SDRAM NT56V1680A0T NT56V1640A0T Data Sheet 8012-90010 First Revision, April 1998 Changes may be made without notice T Preliminary 16 MEG: x4 ,x8 SDRAM DESCRIPTION The NT56V1680A0T is a 2-bankxl,048,576-wordx8-bit synchronous dynamic RAM and the

D4580

Abstract: direct rdram rambus TI 45-600
Contextual Info: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 256/288-Mbit 512Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

M5M4V16S30DTP

Abstract: M5M4V16S40 M5M4V16s30
Contextual Info: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)

TC59RM716GB

Abstract: 9T20T
Contextual Info: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications

Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: P r e lim in a r y ^ GM72V28841 AT/ALT L G S e m i c o n € o » 5l t c i ^ 4,194,304 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V28841 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic

Contextual Info: CMOS SyncBiFIFO 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 p o w e r b id ire ctio n a l F irst-In. F irst-O u t F IF O m e m o rie s, w ith syn ch ro n o u s in te rfa ce fo r fa st read a n d w rite c ycle tim e s. T h e S y n c B iF IF O IM is a da ta b u ffe r th a t can sto re o r re trieve

diode BA 159

Abstract: in4937
Contextual Info: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g

nec aa8

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 1 1 6 5 0 f o r R e v .E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The /¿PD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks

N047

Contextual Info: MITSUBISHI LSIs O ’d ' X ' MH8S64BALD-6 r 536,870,912-BIT 8,388,6O8-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.

gm72v661641ct

Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Contextual Info: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.

Contextual Info: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

GM72V66441

Abstract: GM72V66841
Contextual Info: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.

Contextual Info: MITSUBISHI LSIs O ’d ' \ ' MH16S64PHB-6 r 1,073,741,824-BIT 16,777,216-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.