BA 10 G 8A Search Results
BA 10 G 8A Price and Stock
Micron Technology Inc MT29F2G08ABAEAH4:ENAND Flash SLC 2Gbit 8 63/120 VFBGA 1 CT |
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MT29F2G08ABAEAH4:E | 10,728 |
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TAIYO YUDEN MBASG168AB7105KTNA01Multilayer Ceramic Capacitors MLCC - SMD/SMT 35V 1uF X7R 0603 10% |
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MBASG168AB7105KTNA01 | 9,254 |
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Micron Technology Inc MT29F4G08ABADAH4-IT:DNAND Flash SLC 4Gbit 8 63/120 VFBGA 1 IT |
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MT29F4G08ABADAH4-IT:D | 7,155 |
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Micron Technology Inc MT29F2G08ABAEAH4:E TRNAND Flash SLC 2G 256MX8 FBGA |
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MT29F2G08ABAEAH4:E TR | 4,890 |
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Micron Technology Inc MT29F2G08ABAEAH4-IT:ENAND Flash SLC 2Gbit 8 63/120 VFBGA 1 IT |
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MT29F2G08ABAEAH4-IT:E | 4,329 |
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BA 10 G 8A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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25C20
Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
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D-81541 25C20 C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba | |
78H68
Abstract: sj 7ba ba 10 g 8a acgf
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PbTS/24; 78H68 sj 7ba ba 10 g 8a acgf | |
M5M4V16S30DTP
Abstract: M5M4V16S40 M5M4V16s30
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OCR Scan |
6S20DTP-7 097152-W 1048576-WORD M5M4V16S20DTP 152-word M5M4V16S30DTP 576-word M5M4V16S40DTP 288-word 16-bit. M5M4V16S40 M5M4V16s30 | |
Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit |
OCR Scan |
MH2S64DKD 134217728-BIT 2097152-WORD 64-Bm 64-bit MIT-DS-0173-0 | |
Contextual Info: 3B=*'/@6 #<?5"#&E$&9-88&53:-8'=-:>5>?;= $=;0@/?&@99-=D 7MI[\YMZ 9I SG4?* 6;4AA8? ' 9I"^]#$\Pf SA;4A68@8AF@B78 S&B:<6?8H8? /D4F87 %+ K ) =I / 0( \ ) =I / )+( $9 %*&( 6 S-CDBF86F87 F=%JIEF%. S+G4?<9<87466BD7<A:FB+ |
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D4F87 CDBF86F87 | |
AD-009
Abstract: ta1282
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OCR Scan |
MH2S72DMD-7 150994944-BIT 2097152-WORD 72-BIT MH2S72DLD 100MHz 125MHz AD-009 ta1282 | |
8h bm
Abstract: acgf 4a68 6BAA86F bc8d
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466BD 8h bm acgf 4a68 6BAA86F bc8d | |
Contextual Info: # # &! ##:A0<&<,9=4=>:< #<:/?.>%?88,<C 6LHZ[XLY 1 ;J SE<A:?8+ ;4AA8?'B:<6'8H8? . .BA@4J S A;4A68@8AF@B78 L 1 */ ,&* \ 1 */ .&0 # S,G4?<9<87466BD7<A:% 9BDF4D:8F4CC?<64F<BAE |
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Contextual Info: MITSUBISHI LSIs Preliminary I Some contents are subject to change w ithout notice. MH2S64DLD-7,-8A,-8,-10 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64DLD is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight |
OCR Scan |
MH2S64DLD-7 134217728-BIT 2097152-WORD 64-BIT MH2S64DLD 64-bit 100MHz 125MHz 100MHREGISTER | |
Contextual Info: MITSUBISHI LSIs MH32S72AFA -8A,-8,-10 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72AFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist |
OCR Scan |
MH32S72AFA 104-BIT 432-WORD 72-BIT MIT-DS-0148-0 | |
E78E
Abstract: 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787
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466BD E78E 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787 | |
marking 8d
Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
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466BD marking 8d marking 8E 8d4f marking IBW 8D marking MARKING 3B | |
8A550Contextual Info: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five industry standard 4Mx16 Synchronous DRAMs in |
OCR Scan |
MH4S72AAPG 301989888-BIT 72-BIT 4Mx16 85pin 94pin 10pin 125MHz 8A550 | |
78H68
Abstract: marking 5U MARKING IBW marking A9 62b21
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Contextual Info: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT) |
OCR Scan |
M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD 16-BIT) 2V28S20TP M2V28S30TP | |
BD74Contextual Info: 3A@* ,? %!$"#%a % 8 ,77% 429,7& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY S * ;4AA8? S A;4A68@ 8AF@ B78 9H J ' 9H"^]#$\Pf (&0 W %(&.* 6 $9 S & B: <6 ?8H8? S BBFCD<AF4A7 C<AA<A: 6B@ C4F<5?8 I <F; , ) - , GC8D, ) - C46>4: 8E H8%-1 S H4?4A6;8 D4F87 |
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8L-10LContextual Info: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit |
OCR Scan |
M5M4V64S40ATP-8A 1048576-WORD 16-BIT) M5M4V64S40ATP 16-bit 125MHz, 51ndersea 8L-10L | |
Contextual Info: MITSUBISHI LSIs MH4S72DFA -7,-8A,-8,-10 301,989,888-BIT 4,194,304-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH4S72DFA is 4194304 - word x 72-bit Synchronous DRAM stacked structural module. This consist |
OCR Scan |
MH4S72DFA 888-BIT 304-WORD 72-BIT 72-bit 100MHz 125MHz 100MHzC | |
Contextual Info: MITSUBISHI LSIs MH4S72DMD-7,-8A,-8,-10 301989888-BIT 4194304-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72DMD is 4194304-word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 2Mx8 Synchronous DRAMs in TSOP and one industory standard |
OCR Scan |
MH4S72DMD-7 301989888-BIT 4194304-WORD 72-BIT MH4S72DMD 72-bit 100MHz 125MHz | |
bd 9h
Abstract: ga6f
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Contextual Info: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C |
OCR Scan |
RHRP870, RHRP880, RHRP890, RHRP8100 T0220AC RHRP890 TA49060) | |
Contextual Info: P0.A<I8EF4?0"ACHG03080D/4 P0 BJ8E046GBE0BEE86G870 P0?B4G<A:07=HFG45?80BHEG;0 HGCHG P0%BJ0)EB9<?80C.0!<:; *<0&5/*70 *,1*276010F440-(&7-326 46GBEL0HGB@4G<BA -8FG020&84FHE8@8AG %<:;G0"A7HFGE<4?0DH<C@8AG 30*0,8E<8F B00GB0CB00 *H470(HGCHG0)BJ8E0,HCC?<8F0 |
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ACHG03 46GBE0 BEE86G870 HFG45 276010F440-( 46GBEL0 -8FG020 84FHE8 B00GB0C 84GHE8F04A70 | |
9912EContextual Info: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64DMD-7,-8A,-8,-10 268435456-BIT 4194304-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64DMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 2Mx8 Synchronous DRAMs in |
OCR Scan |
MH4S64DMD-7 268435456-BIT 4194304-WQRD 64-BIT MH4S64DMD 4194304-word 100MHz 125MHz 9912E | |
Contextual Info: Preliminary Speo. MITSUBISHI LSIs Some contents are subject to change w ithout notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five |
OCR Scan |
MH4S72AAPG 301989888-BIT 72-BIT 72-bit 125MHz 100MHz |