BA0BA12 Search Results

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

AS4DDR264M72PBG

Abstract: AS4DDR232M72APBG
Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

M39P0R1080E4

Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Contextual Info: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)

AS4DDR232M64PBG

Contextual Info: iPEM 2.1 Gb SDRAM-DDR2 AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

AS4DDR232M64PBG

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp

AS4DDR232M72PBG

Abstract: AS4DDR264M72PBG
Contextual Info: i PEM 2.4 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

AS4DDR232M64PBG

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

HM62256LP

Abstract: DS5000FP 8051 opcode Cu-56 OPCODE SHEET FOR 8051 MICROCONTROLLER DS2250 DS5000
Contextual Info: b4E 2L14130 0007472 74fl D DALLAS SEMI CONDUCT OR D AL CORP DALLAS SEMICONDUCTOR DS5000FP Soft M icrocontroller Chip FEATURES PIN ASSIGNMENT • 8051 compatible uC adapts to its task - § Accesses between SK and 64K of nonvolatile SRAM In-system programming via on-chip serial port

AS4DDR232M72APBG

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS  DDR2 Data rate = 667, 533, 400  Available in Industrial, Enhanced and Military Temp  Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

DPS41129-1201

Abstract: 2712B 27128 eprom ci 2764 DPS41129 DPS40128-100C
Contextual Info: DENSE-PAC MICROSYSTEMS 07E D | 275^415 □□□0120 M | - 8KX8 BASED Dense-Pac m . / r Microsystems, Inc. CM O S SRAM FAMILY DESCRIPTION: The Dense-Pac 8 K X 8 Based Family of Static Random A ccess M em ories SRAM , com plete w ith memory •interface logic and on-board capacitors are available in

AS4DDR232M64PBG

Contextual Info: iPEM 2.1 Gb SDRAM-DDR2 AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: DPS1124 64K X 16 C M O S SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1124 is a buffered and decoded 64K X 16 C M O S SRAM module built with sixteen 8K X 8 SRAMs. The address and data l/Os are buffered with high-speed C M O S logic devices. All pins are TTL compatible and

Contextual Info: DS5000FP DALLAS SEMICONDUCTOR DS5000FP Soft Microcontroller Chip FEATURES PIN ASSIGNMENT • 8051 compatible uC adapts to its task - 8 < Accesses between 8K and 64K of nonvolatile SRAM In-system programming via on-chip serial port Can modifying its own program or data memory

Contextual Info: DENSE-PAC MICRO SYSTEMS D7E D | 575^415 □□□□17b T 8KX8T BASED Dense-Pac Microsystems, inc. CMOS EEPROM FAMILY DESCRIPTION: The DPE8KX8T family consists of Electrically Eraseable and Reprogrammable Read-Only Memories EEPROMs with popular, easy to use features.

Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: i PEM 2.4 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

SDRAM aeroflex micron die

Abstract: CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: DS5000FP DALLAS D S5000FP Soft Microprocessor Chip SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 8051 compatible microprocessor adapts to its task - —“Iicy h- qj <olUmr~ UJ C QLm <O Ui|< 0-1 Qolo CO OO0 4. C O 2 0CL.lo Q-lolu J0 ZC Q< c .D Q O Accesses between 8K and 64K bytes of nonvol­

Contextual Info: DENSE-PAC MICROSYSTEMS D7E D | 575^415 □□□□17b ‘i f~ 8KX8T BASED Dense-Pac Microsystems, Inc. CMOS EEPROM FAMILY 7 D ESCRIPTIO N : The DPE8KX8T family consists of Electrically Eraseable and Reprogrammable Read-Only Memories EEPROMs with popular, easy to use features.

Contextual Info: iPEM PRELIMINARY 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: b4E 2L14130 0007472 74fl D DALLAS SEMI CONDUCT OR D AL CORP DALLAS SEMICONDUCTOR DS5000FP Soft M icrocontroller Chip FEATURES PIN ASSIGNMENT • 8051 compatible uC adapts to its task - Accesses between SK and 64K of nonvolatile SRAM - In-system programming via on-chip serial port