BA20 Search Results

Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

ROD20

Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

KD-19-105-M06

Abstract: KTH-2127 KTD-225 KTD225 KINGS00127 5012h3012 KD-19-105
Contextual Info: NOTES: 1. FOR USE WITH RAYCHEM 5012H3012 ft in BA20048 CABLES. 2. FOR CABLING INSTRUCTIONS SEE CP-5402. 3. FOR CABLE TRMMNG USE KTJ-187 AND KTD-225. 4. FOR CRBIPMG USE DC KTH-2127. 5. INTERFACE PER MIL-STD-348. FIG. 302-2. 6. MARK PACKAGE: KINGS KD -19-105-M 06

KN-59-330

Abstract: KTJ-187 KTD-225 5012h3012 BA20048 KN-59
Contextual Info: . 1.55 REF. 39.37 MM o (3 HOLES) NOTES: 1. FOR 2. FOR 3. FOR 4. FOR USE WITH RAYCHEM 5012H3012 & ITT BA20048 CABLE. CABLING INSTRUCTIONS SEE CP-5402. CABLE TRIMMING USE KTJ-187 & KTD-225. CRIMPING USE DIE SIZE 127. 5. ITEMS , ( 2 ) , & (f ) , TO HAVE TR-5 FINISH.

5.1 Channel audio amplifier

Abstract: 5.1 channel audio power amplifier 5.1 audio power amplifier ST 6 channel audio volume control BA20370 Biforst Technology 5v audio amplifier HSOP28 "stereo amplifier" 5V supply
Contextual Info: 2W Stereo Class-D Audio Power Amplifier BA20370 Brief Data Sheet Preliminary Version Rev.1.0, 2005.11.24 Biforst Technology Inc. BA20370 _ 2W Stereo Class-D Audio Power Amplifier 2W Stereo Class-D Audio Power Amplifier BA20370 GENERAL DESCRIPTION The BA20370 is a 5V class-D amplifier from Biforst Technology. BA20370 provides dc volume

BA20372

Abstract: Biforst Technology
Contextual Info: 2W Stereo Class-D Audio Power Amplifier BA20372 Brief Data Sheet Preliminary Version Rev.1.1, 2006.01.26 Biforst Technology Inc. BA20372 _ 2W Stereo Class-D Audio Power Amplifier 2W Stereo Class-D Audio Power Amplifier BA20372 GENERAL DESCRIPTION The BA20372 is a 5V class-D amplifier from Biforst Technology. BA20372 provides dc volume

5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: BA20550 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors free down load 5v 3W AUDIO AMPLIFIER CIRCUIT 5v 3w audio amplifier 8 ohm 0.5W speaker 600R TSSOP24 3 x 25w audio amplifier circuit diagram BA2055
Contextual Info: 3W Stereo Class-D Audio Power Amplifier BA20550 Data Sheet Rev.1.3, 2007.11.26 Biforst Technology Inc. BA20550 _ 3W Stereo Class-D Audio Power Amplifier 3W Stereo Class-D Audio Power Amplifier BA20550 GENERAL DESCRIPTION The BA20550 is a 5V class-D amplifier from Biforst Technology. BA20550 provides dc volume

BA201

Abstract: 10MSA
Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

FERRITE BEAD 600R 100M

Abstract: 4ohm 1W speaker Speaker 8ohm 0.5w Speaker 8ohm 0.5w circuit Biforst Technology 600R TSSOP28 8 ohm 0.5W speaker BA20371 BA2037
Contextual Info: 2W Stereo Class-D Audio Power Amplifier DiPOP Only BA20371 Data Sheet Rev.1.4, 2007.03.09 Biforst Biforst Technology Inc. BA20371 _ 2W Stereo Class-D Audio Power Amplifier 2W Stereo Class-D Audio Power Amplifier BA20371 GENERAL DESCRIPTION The BA20371 is a 5V class-D amplifier from Biforst Technology. BA20371 provides dc volume

KD-19-105-M06

Abstract: KTH-2127 KD-19-105 105-M06 KTJ-187 KTD225
Contextual Info: NOTES: 1. FOR USE WITH RAYCHEM 5012H3012 & ITT BA20048 CABLES. 2. FOR CABLING INSTRUCTIONS SEE CP-5402. 3. FOR CABLE TRIMMING USE KTJ-187 AND KTD-225. 4. FOR CRIMPING USE DIE KTH-2127. 5. INTERFACE PER MIL-STD-348. FIG. 302-2. 6. MARK PACKAGE: KINGS K D - 1 9 - 105-M06

BA20048

Contextual Info: 1.74 REF. NOTES: 1. FOR USE WITH RAYCHEM 5012H3012 & ITT BA20048 CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-5402. 3. FOR CRIMPING USE DIE SIZE 127. 4. MARK PACKAGE: KINGS K A -59 -3 91-M 06 XXXX DATE CODE 5. MATERIALS: K-GRIP SLEEVE: BRONZE, ASTM-B135. INSULATOR: TEFLON, ASTM-D-4894.

BA20048

Abstract: 5012H3012 CP-5402
Contextual Info: FOR USE WITH RAYCHEM 5012H3012 & ITT BA20048 CABLE. FOR CABLING INSTRUCTIONS SEE CP-5402. FOR CRIMPING USE DIE SIZE 127. MARK PACKAGE: KINGS KA-59-391-M 06 XXXX DATE CODE 5. MATERIALS: K-GRIP SLEEVE: BRONZE, ASTM-B135. INSULATOR: TEFLON, ASTM-D-4894. OUTER CONTACT: COPPER, ASTM-B-194

BA204.115

Abstract: BA204
Contextual Info: BA204-115 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)45 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)2.0

KA-59-391-M06

Abstract: BA20048
Contextual Info: NOTES: 1. FOR USE WITH RAYCHEM 5012H3012 k ITT BA20048 CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-5402. 3. FOR CRIMPING USE DIE SIZE 127. 4. MARK PACKAGE: KINGS KA-59-391-M06 XXXX DATE CODE 5. MATERIALS: K-GRIP SLEEVE: BRONZE, ASTM-B135. INSULATOR: TEFLON, ASTM-D-4894.

Contextual Info: BA203 Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 12 Load Current Max. (A)125m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)24 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)71 Package StyleModule

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

N25Q256

Contextual Info: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

RTV 105

Abstract: R5S72060W200FPV SH7206 AN7110 Nippon capacitors 8 905 958 460
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

MD 202

Abstract: TMDB HD6417021 HD6437020 HD6437021 HD6477021 SH7000 SH7020 SH7021 h500
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog