BA5 MARKING Search Results

BA5 marking

Abstract: SBA-5089 marking ba5 BA5 Amplifier class d rf power amplifier
Contextual Info: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

SBA-5089

Contextual Info: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA5 Amplifier

Abstract: GSM/BA5 Amplifier marking ba5 class d rf power amplifier
Contextual Info: Advanced Data Sheet SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process

Contextual Info: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal

BA5Z

Abstract: BA5 marking marking ba5 sba5089 SBA-5089 sba-5089z MMIC "SOT89" marking CODE h marking sba marking code ba5
Contextual Info: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal

BA5Z

Abstract: BA5 marking marking ba5 BA5 Amplifier SBA-5089 GSM/BA5 Amplifier
Contextual Info: SBA-5089 Product Description SBA-5089Z Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent

SBA-5086

Abstract: BA5 Amplifier BA5 marking mmic marking L SIRENZA MARKING
Contextual Info: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA5 Amplifier

Abstract: BA5 marking SBA-5086
Contextual Info: Preliminary Data Sheet SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process

BA5 Amplifier

Abstract: BA512 SBA-5086 BA5 marking
Contextual Info: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA5 marking

Abstract: sba-5086z SBA-5086 sba5086z RW mmic
Contextual Info: SBA-5086 SBA-5086Z Product Description Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent

Contextual Info: f\- o KOA 5- a ; - o 7 TANTALUM CHIP CAPACITOR TMC SPEER ELECTRONICS, INC. TANTALUM CHIP CAPACITOR • Epoxy Molded Body, UL94V-0 Flammability • EIA - US and EIA - Japan Compatible Sizes • 100% Burn-in and End-of-Line Testing • Extended Values Per Case Size

ch340s

Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

Contextual Info: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

MT49H16M18C

Contextual Info: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)

smd dk qk

Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

MT49H16M18C

Contextual Info: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

MT49H16M18C

Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

smd marking codes BA5

Abstract: MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

MT49H16M18C

Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

BA5 marking

Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

SMD d1c

Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

samsung lcd tv circuits diagrams

Abstract: LTM150XH-T01 BA5 marking samsung lcd tv power supply diagrams diagram samsung LCD TV circuits diagram samsung LCD TV power circuits samsung "lcd tv" pixel circuits diagram 02VS 2SK1059 2SK1399
Contextual Info: Approval TO : DATE : SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. : LTM150XH-T01 LTM150XH-T01 APPROVED BY : Any Modification of Spec is not allowed without SEC’s permission. Approved by : PREPARED BY : AMLCD Technical Customer Service Team SAMSUNG ELECTRONICS CO., LTD.

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

BZX84C75

Abstract: BZX84C4V3ET1 marking bb8 marking code bb6
Contextual Info: BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well