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T5CD

Contextual Info: U M C U M 2661 Enhanced Programmable Communications Interface EPCI Features • Automatic serial echo mode (échoplex) ■ Local or remote maintenance loop back mode Baudrate: de to IM bps (1X clock) - de to 62.5K bps (16X clock) - de to 15.625K bps (64X clock)

120v battery charger Schematic Diagram

Abstract: schematic diagram 48V battery charger regulator schematic diagram 48V automatic battery charger battery charger schematic 24V
Contextual Info: y UNITRODE Advanced Low Voltage Boost Controller With Backup Charger UCC29401 UCC39401 ADVANCE INFORMATION FEATURES DESCRIPTION • Synchronous Conversion with Internal MOSFETs The UCC39401 is a multi-output single inductor synchronous boost control­ ler optimized to operate from a low input voltage such as a single or dual

ely transformers

Contextual Info: Monolithic-Microwave Integrated Circuits BACKGROUND T l's M icrow ave Military Components M M C organization was created to produce Gallium Arsenide (GaAs) Monolithic M icrowave Integrated Circuits (M M ICs), and to integrate the broad range of technologies available at Texas Instruments.

la 4508 ic pin diagram

Abstract: la 4508 ic diagram LM 4747
Contextual Info: TOKO 1C Data Sheet Inc. TK716xx TK716XXS V O L T A G E R E G U L A T O R W ITH ON/OFF S W IT C H FEATURES Available battery back-up. Internal Reverse Bias Protection High Precision output Voltage ±2% or ±60mV Standard device (±1% or ±40mV) High grade device

Contextual Info: SN74ALS996 8 BIT D T Y P E EDG E TRIGGERED READ BACK LATC HES ADVANCE INFORMATION D 2 8 5 4 , OCTOBER 1 9 8 4 -R E V IS E D JA N U A R Y 1 9 8 6 • 3-State l/O-Type Read-Back Inputs • Bus-Structured Pinout • D W OR N T P AC K A G E TO P V IE W 1 ^2 4 3

Contextual Info: o U N IT R O D E _ bq2201 SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3-volt battery-backup applica­ tions The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard

TLY2

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO F F J t OTTESD DD171S7 S | ~ 99D 17157 DT-Hl'àl TLY258 GaAsP YELLOW LIGHT EMISSION Unit in ran FEATURES: . Rectangular Type Surface Size 7 x15nm) . Suitable as a Backlight Lamp l&O . Low Drive Current, Uniform Light Emission

74als666

Abstract: 74ALS667 2561a
Contextual Info: SN 5 4 A LS 6 6 6 , SN 5 4 A LS6 6 7 , SN 7 4 A LS 6 6 6 , S N 7 4 A LS 6 6 7 8 BIT D TYPE T R A N SP A R E N T R EAD-BACK LATCHES W ITH 3-STATE O U TPU TS D 2 8 5 5 , JUNE 1 9 8 4 - • 3-State l/O-Type Read-Back Inputs • Bus-Structured Pinout • Choice of True or Inverting Logic

Contextual Info: SN74ALS994, SN74ALS995 10-BIT O-TYPE TRANSPARENT READ-BACK LATCHES D 2 8 5 6 , O C TO B E R 1 9 8 4 - R E V IS E D J A N U A R Y 1 9 8 6 SN 74A LS994 . . . 3-S tate l/O-Type Read-Back Inputs D W OR N T PA CKAG E T O P V IE W Bus-Structured Pinout OERB E 1

Contextual Info: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data

Contextual Info: DATA TRANSMISSION Backplane Bridging is Easy w ith SN65LVDS22 and SN 65LVD M 22 M U X Repeaters SN65LVDS22 M U X table ► $311 SN 65LV D M 22 ► $3.84 in quantifias « 1 1 * ilabile in IG-pin SOIC D AT A GLANCE * • High signaling rates 400 Mbps High impedance drivers

Contextual Info: •APPLICATIONS ◆CMOS ◆Highly Accurate :±2% ◆Low Power Consumption :0.7 A VIN=1.5V ●Microprocessor reset circuitry ●Memory battery back-up circuits ●Power-on reset circuits ●Power failure detection ●System battery life and charge voltage monitors

Contextual Info: TLWNF1108A T11 LED Lamps InGaN and Phosphor TLWNF1108A(T11 1. Applications • General Lighting • Backlighting • Pilot Lamps 2. Features (1 Size: 3.2 (L) mm x 2.9 (W) mm × 1.9 (H) mm (2) Luminous intensity: IV = 3600 mcd (typ.) @IF = 40 mA (3) LED chip and phosphor

Contextual Info: SN74FB2031 9-BIT TTL/BTL ADDRESS/DATA TRANSCEIVER SCBS176L – NOVEMBER 1991 – REVISED SEPTEMBER 2000 D D D D D Compatible With IEEE Std 1194.1-1991 BTL TTL A Port, Backplane Transceiver Logic (BTL) B Port Open-Collector B-Port Outputs Sink 100 mA High-Impedance State During Power Up

wiring diagram single phase motor

Abstract: UF220APA23-HC2-A motor run capacitor line diagram of single phase motor SINGLE PHASE motor WIRING DIAGRAM
Contextual Info: UF220APA series AIR OUT 2 Features: STATIC PRESSURE - IN. OF WATER 45º 45º 1.50 Size: (220 dia. x 71mm) 8.66 dia. x 2.79 inches 2.79 ±0.02 (71 ±0.5) backward curved impeller Operating voltage (VAC): 115 or 230 Ø2 . (Ø5 28 8) Construction: Ø6.50 ±0.02

350680

Abstract: KBI-B02D inverter transformer for CCFT
Contextual Info: TAIYO YUDEN KBI-BO2D-RH LCD Backlight Driver Model 12 Volt Input Dual Tube CCFT Inverter Brightness Control Physical Specifications Dimensions: 105mm x 25mm x 10mm 4.13” x 0.98” x 0.39” Operating Temp: -10 to 70°C, convection cooling Relative Humidity:

1100R

Abstract: 11R472
Contextual Info: 1100R Series www.murata-ps.com Radial Lead Inductors SELECTION GUIDE Order Code FEATURES RoHS compliant Radial format Up to 3.0A IDC 1.0 to 470 H Low DC resistance Compact size Supplied in bags of 200 UL VW-1 rated sleeving Backward compatible with Sn/Pb soldering systems

Contextual Info: SN74GTLPH1645 16-BIT LVTTL-TO-GTLP ADJUSTABLE-EDGE-RATE BUS TRANSCEIVER www.ti.com FEATURES • • • • • • • • • • • • Member of the Texas Instruments Widebus Family TI-OPC™ Circuitry Limits Ringing on Unevenly Loaded Backplanes OEC™ Circuitry Improves Signal Integrity and

Contextual Info: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs

Contextual Info: SN54ALS996, SN74ALS996 8-BIT D-TYPE EDGE-TRIGGERED READ-BACK LATCHES SDAS098B – OCTOBER 1984 – REVISED JANUARY 1995 • • • • 3-State I/O-Type Read-Back Inputs Bus-Structured Pinout T/C Determines True or Complementary Data at Q Outputs Package Options Include Plastic

Contextual Info: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

ne002

Abstract: 1n4551 ir705 1N3307 1N3316 1N3326 1n4554 1N3340 IN3310 1N3309
Contextual Info: Back to Zener Diodes 1N3305 1N4549 1N3350 1N4556 'li'i NEW ENGLAND SEMICONDUCTOR 50 WATT SILICON ZENER DIODES Available in Voltages from 3.9 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by

Smartmesh IP

Contextual Info: Application Note: Using the Powered Backbone to Improve Latency Application Note: Using the Powered Backbone to Improve Latency This document contains advance information of a product in development. All specifications are subject to change without notice. Consult LTC factory before using.

TLG258

Contextual Info: TOSHIBA íDISCRETE/OPTOJ- TT 9097250 TOSHIBA {DISCRETE/OPTO D F l T D T V a S O 001715b 3 "|~ 99D 17156 D~P4h3l TLG258 GaP GREEN LIGHT EMISSION Unit in ran I FEATURES: . Rectangular Type Surface Size 7 xl5n*n) . Suitable as a Backlight Lamp . Low Drive Current, Uniform Light Emission