BALLAST Search Results

Ignition Driver IC

Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
Contextual Info: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting

220v circuit diagram electronic ballast

Abstract: Linear dimming ballast PT5623 FLUORESCENT LAMPS CFLS Ignition Driver IC ptc fluorescent ballast PREHEAT electronic ballast ic
Contextual Info: PT5623 Linear Dimming on/off Ballast Controller DESCRIPTION The PT5623 is an electronic ballast controller IC intended for linear dimming product with ordinary switch. The features of the controller IC include closed-loop dimming control of the lamp current,

8n50e

Abstract: 20n50e MC34262 P3657A PT4215 14N5 SG-35 14N50 MC34262D MC332
Contextual Info: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,

Contextual Info: 307C1403BHLABR, 307C1403BHMABR Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS AT 25 °C PARAMETER UNIT Ω 100 ± 25 % Maximum Voltage Vrms 340 Maximum Continuous Voltage Vrms 265

Contextual Info: 307C1306BHLABR, 307C1306BHMABR Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS AT 25 °C PARAMETER UNIT Ω 150 ± 25 % Maximum Voltage Vrms 340 Maximum Continuous Voltage Vrms 150

Contextual Info: 307C1365BGLABR, 307C1365BGMABR Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS AT 25 °C PARAMETER UNIT Ω 100 ± 25 % Maximum Voltage Vrms 310 Maximum Continuous Voltage Vrms 90

Contextual Info: 307C1654BHLAB, 307C1654BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 70 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 150 Withstand Voltage

Contextual Info: 307C1407BHLAB, 307C1407BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 150 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 80 Withstand Voltage

CS160

Contextual Info: CS1600 Low-cost PFC Controller for Electronic Ballasts Features & Description Description  Lowest PFC System Cost for Electronic Ballasts CS1600 is a high-performance Variable Frequency Discontinuous Conduction Mode VF - DCM , active Power Factor Correction (PFC) controller, optimized to deliver the lowest PFC

BUL52B

Contextual Info: Product Specification www.jmnic.com BUL52B Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN DESCRIPTION

BUL52B

Abstract: BUL56B
Contextual Info: Product Specification www.jmnic.com BUL52B Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN DESCRIPTION

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

BUL510

Abstract: L200H
Contextual Info: Product Specification www.jmnic.com BUL510 Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・High switching speed APPLICATIONS ・Electronic ballasts for fluorescent lighting ・Switch mode power supplies ・Electronic transformer for

capacitor 47nf

Abstract: cfl ballast crest factor bridge rectifier 1A IR2520D irf ballast cfl ballast 14w cfl circuit transistor Electronic ballast 10uF 450v 1uF 400V capacitor 10 ELECTRONIC
Contextual Info: Application Note AN-1073 Analysis of Different Solutions and Trade-off Cost vs. Power Factor Performance for Electronic Ballasts By Cecilia Contenti Table of Contents Page I. Introduction II. Low Power Factor

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

Contextual Info: 101/101A 1 Watt - 28 Volts, Class C Microwave, 500-1200 MHz GENERAL DESCRIPTION CASE OUTLINE The 101/101A is a COMMON BASE transistor capable of providing 1 Watt Class C, RF output power at 500-1200 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

55ay

Abstract: DME150
Contextual Info: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven

uc3872

Abstract: 24v ballast push-pull zvs 24v center tap transformer 220 neon lamp 220 volt RESONANT CONTROLLER UNITRODE fluorescent PLCC-20 SOIC-16 SSOP-16
Contextual Info: UC1872 UC2872 UC3872 Resonant Lamp Ballast Controller FEATURES DESCRIPTION • Controls Different Types of Lamps: Cold Cathode Fluorescent, Neon, and Gas Discharge • Zero Voltage Switching ZVS of Push-Pull Drivers • Accurate Control of Lamp Current The UC3872 is a resonant lamp ballast controller optimized for driving

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System