BAP 600 Search Results

Rockwell Semiconductor Systems

Contextual Info: 4L* Rockw ell Semiconductor Systems RF252 Code Division Multiple Access CDMA Baseband Analog Processor (BAP) Product Description The RF252 Code Division Multiple Access (CDMA) Baseband Analog Processor (BAP) is intended to be used in dual-mode CDMA and Frequency Modulated (FM)

Contextual Info: 600W POWER SUPPLY IN 5” X 4.5” X 12” PACKAGE BAP 600 SERIES • • • • • • • Competitive price Stock or short delivery Compact size Full electronic protection Made in North America Telecom quality Field-proven design topology The BAP 600 Series is a compact DC/DC converter which uses established design techniques to deliver up to 700W output

heart rate capacitive sensor

Abstract: oil pressure sensor generator airbag
Contextual Info: Silicon Pressure Sensor ICs Silicon Pressure Sensor ICs 4 Silicon Pressure Sensor ICs In order to make a vehicles status information available to the more and more complex electronics, the number of sensors incorporated is still increasing. One major field of

RCN-1205

Abstract: RHP-2405 NAP-0512 9 volt battery diagram RCN-0512 NCN-0512 RCN0505 NCP-0524 NFP-0515 NAN-0505
Contextual Info: TAHURA CORP OF A M E R I C A StE D • 3341517 QDQ017t> T74 Hi TANLI TAMURA SINGLE-IN-LINE DC to DC CONVERTERS Polarity Reversing ■ Voltage Boosting ■ Voltage Decreasing ■ Direct Battery Input Tam ura D C /D C converters provide board level DC power conversion eliminating costly regulator circuitry, additional off-board power supplies

BTP 10/400

Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
Contextual Info: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT

RFP-2405

Abstract: IFS-0505 RCN-0512 RFP2405 IFD-2412 4-20 ma to 0 to 10 V converter ckt ifd 0512 NDP-0515 RCN-1212 IFS0505
Contextual Info: f la m s '!? QGQDOIfl 1 v 7# t t ;-c Single and Dual Outputs 1 to 3.5VDC Battery Input 5 ,1 2 & 24 VDC Inputs DC & 48VDC Input- Quad Outputs Voltage Decreasing Voltage Boosting Polarity Reversing %" 50 to 3,000mw Outputs Floating or Isolated Outputs 9V LAN Converters

BA111T

Abstract: BNH50W 300V dc dc STEP DOWN BNE50W BA411S BN400NW 38mm2 BNDN-1000 IDEC BA 6m35
Contextual Info: Terminal Blocks BA Fuse Blocks BA Series Key features of the BA series include: • Self-contained: end plates are not required • Rugged heavy-duty construction • Current capacities up to 40A • 3-pole units available as 1 piece no endplates are needed

GT3W-A11

Abstract: SR2P-06 GT3F-1EAF20 SR2P-05 SR2P-05C SR2P-51 SR6P-M08G SR6P-M11G Timers GT3F-1AD24
Contextual Info: Home > Products > Timers > GT3 Series Multi-function GT3 Series Timers Overview There are several available styles of GT3 Series Timers. GT3A Analog Timers, GT3D Digital Timers, GT3F True Power OFF Delay Timers, GT3S Star-Delta and GT3W Dual Time Range Timers offer

wiring diagram for 11-pin relay

Abstract: 11-pin relay pin out diagram 6711P SR6P-M11G 11-Pin base timer SR2P-511 30v analog switch DPDT 30v 3A analog switch DPDT
Contextual Info: Timers GT3F Series GT3F Series — True OFF Delay Timers Key features of the GT3F series include: • Mountable in sockets or flush panel • “True” power OFF-delay up to 10 minutes • No external control switch necessary • Available with reset inputs

Contextual Info: 13 10 12 41314 NOTES: MATERIALS: HOUSING: GLASS FILLED POLYESTER, TERMINALS: PHOSPHOR BRONZE 1 UL94 V-0, COLOR: BLACK .810 FINISH: TERMINALS: SELECT GOLD IN CONTACT AREA: 50 MICROINCHES MIN. «SELECT TIN IN PC TAIL AREA: 100 MICROINCHES MIN. WITH OVERALL NICKEL UNDERPLATE: 50 MICROINCHES MIN.

mobile jammer

Abstract: mobile signal jammer C1327 C1389 CX20536-12 cdma mobile phone jammer C1388 mobile phone jammer C1387 CX20489
Contextual Info: DATA SHEET CX20536: CDMA and GPS Baseband Analog Processor The CX20536 includes all of the circuitry needed to support the receive baseband signal processing and conversions between analog and digital signals for CDMA and GPS operation. For a AVDD_RX VREFN

by 199

Abstract: BY199
Contextual Info: 10 12 13 42788 NOTES: 1 M ATERIALS: HOUSING: G LASS FILLED NYLON, TERMINALS: PHOSPHOR BRONZE U L94 V -0 . COLOR: BLACK .810 2) FINISH: TERMINALS: SELEC T GOLD IN CONTACT AR EA : 50 MICROINCHES MIN., «S ELEC T TIN IN PC T A IL AR EA : 100 MICROINCHES MIN.

simple subwoofer circuit diagram

Abstract: dual sub woofer circuit diagram Various Russian logic IC Datasheets spoken english from tamil ac3 coder 5.1 speaker with subwoofer circuit diagram surround sound subwoofer circuits 5.1 surround sound dolby circuits 7.1 surround sound dolby circuits tone control subwoofer circuit diagram
Contextual Info: Doc. A/52 10 Nov 94 12 Apr 95 24 May 95 20 Dec 95 DIGITAL AUDIO COMPRESSION STANDARD AC-3 ADVANCED TELEVISION SYSTEMS COMMITTEE James C. McKinney, Chairman Dr. Robert Hopkins, Executive Director ATSC Digital Audio Compression (AC-3) Standard Blank Page 20 Dec 95

cdma clock

Abstract: pll synthesizer for mobile phone jammer mobile phone jammer circuit operation cdma mobile phone jammer mobile jammer tew tcxo C1327 transistor cdma baseband processor mobile phone jammer C1327
Contextual Info: PRELIMINARY DATA SHEET SKY20636: CDMA Baseband Analog Processor synthesis for 19.2, 19.68, and 19.8 MHz system clocks. It also provides the capability to accept the CHIPx8 clock from the Mobile Station Modem MSM or equivalent baseband device. The SKY20636 also integrates a VHF PLL synthesizer to

capacitive pressure sensor array

Abstract: BAP 16 voltage regulator capacitive pressure sensor "capacitive pressure sensor" MEMS "capacitive pressure sensor" digital piezoresistive pressure sensor automotive project digital pressure sensor capacitive pressure sensors capacitor huang micromechanical
Contextual Info: A Monolithically Integrated Capacitive Pressure Sensor System for Automotive Applications Christian Kolle 1 *, Andrea Logiudice(2), Ernst Bodenstorfer(1), Leo Gwehenberger(1), Dieter Draxelmayr(1) (1) Infineon Technologies MDCA, Villach, Austria,*christian.kolle@infineon.com

27i0

Contextual Info: 12 13 10 11 41687 N O TE S : 1 MATERIALS: HOUSING: GLASS FILLED POLYESTER, TERMINALS: PHOSPHOR BRONZE 2) UL94 V -0 , COLOR: BLACK FINISH: TERMINALS: A) SELECT GOLD IN CONTACT AREA: 50 MICROINCHES MIN. «SELEC T TIN IN PC TAIL AREA: 100 MICROINCHES MIN.,

sda4136

Abstract: PK413 A4136 A-41369-42ABAA A-41369-44ABAA A-41369-44CBAA A-41369-64ABAA A-41369-66ABAA A-41369-66BBAA A41369
Contextual Info: 12 13 10 11 41369 N O TE S : 1 2) MATERIALS: HOUSING: GLASS FILLED POLYESTER, TERMINALS: PHOSPHOR BRONZE UL94 V -0 , COLOR: BLACK FINISH: TERMINALS: A) SELECT GOLD IN CONTACT AREA: 50 MICROINCHES (1.27 MICROMETERS) MIN., .S E L E C T TIN IN PC TAIL AREA: 100 MICROINCHES (2.54 MICROMETERS) MIN.

PK413

Contextual Info: 13 12 10 11 41687 NOTES: 1 MATERIALS: HOUSING: GLASS FILLED POLYESTER. TERMINALS: PHOSPHOR BRONZE UL94 V -0 . COLOR: BLACK 2) FINISH: TERMINALS: A) SELECT GOLD IN CONTACT AREA: 50 MICROINCHES (1.27 MICROMETERS) MIN. «SELEC T TIN IN PC TAIL AREA: 100 MICROINCHES <2.54 MICROMETERS) MIN.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

p144f

Abstract: TDK EF25 BAP36 PD482
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

PD48288236FF-EF25-DW1-A

Abstract: PD482
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209-A, 48288218-A, 48288236-A 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD48288236FF-EF25-DW1-A

Abstract: 4828
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid