| BAS29 |
|
Continental Device India
|
Silicon Planar Epitaxial High Speed Diode |
Original |
PDF
|
45.59KB |
2 |
| BAS29 |
|
Fairchild Semiconductor
|
High Voltage General Purpose Diode |
Original |
PDF
|
580.09KB |
6 |
| BAS29 |
|
Fairchild Semiconductor
|
Small Signal Diode |
Original |
PDF
|
54.1KB |
2 |
| BAS29 |
|
Kexin
|
General Purpose Controlled Avalanche Diodes |
Original |
PDF
|
77.55KB |
4 |
| BAS29 |
|
NXP Semiconductors
|
BAS29 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V |
Original |
PDF
|
76.76KB |
9 |
| BAS29 |
|
Philips Semiconductors
|
General purpose controlled avalanche (double) diodes |
Original |
PDF
|
76.43KB |
12 |
| BAS29 |
|
Philips Semiconductors
|
Silicon Planar Epitaxial High-Speed Diode |
Original |
PDF
|
49.46KB |
2 |
| BAS29 |
|
RFE International
|
Rectifier Diode, Switching Diode, Single, 120 MinV, SOT-23, 3-Pin |
Original |
PDF
|
96.07KB |
1 |
| BAS29 |
|
Transys Electronics
|
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE |
Original |
PDF
|
48.65KB |
2 |
| BAS29 |
|
TY Semiconductor
|
TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 |
Original |
PDF
|
221.05KB |
4 |
| BAS29 |
|
Continental Device India
|
SOT-23 Transistors & Diodes Data Book 1995 |
Scan |
PDF
|
48.81KB |
2 |
| BAS29 |
|
Jinan Gude Electronic Device
|
SURFACE MOUNT SWITCHING DIODES |
Scan |
PDF
|
99.37KB |
1 |
| BAS29 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
83.45KB |
1 |
| BAS29 |
|
National Semiconductor
|
Pro Electron Surface Mount Diodes |
Scan |
PDF
|
20.48KB |
1 |
|
|
| BAS29 |
|
National Semiconductor
|
Diode Pro Electron Series |
Scan |
PDF
|
40.04KB |
2 |
| BAS29 |
|
National Semiconductor
|
Silicon Single Junction Diodes |
Scan |
PDF
|
85.34KB |
1 |
| BAS29 |
|
National Semiconductor
|
Diode - Pro Electron Series |
Scan |
PDF
|
39.61KB |
2 |
| BAS29,215 |
|
NXP Semiconductors
|
General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
Original |
PDF
|
76.87KB |
9 |
| BAS299-7 |
|
Diodes Incorporated
|
FAST SWITCHING DIODE SOT23 |
Original |
PDF
|
217.89KB |
|
| BAS29_D87Z |
|
Fairchild Semiconductor
|
General Purpose High Voltage Diode; Package: SOT-23; No of Pins: 3; Container: Tape & Reel |
Original |
PDF
|
54.09KB |
2 |
