BASE STATION LTE Search Results

jrc 78L08

Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
Contextual Info: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN

Contextual Info: TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •

SKY65351-11

Contextual Info: PRELIMINARY DATA SHEET SKY65351-11: 450 MHz Receive/IF Module For 2G/3G Base Station Applications Applications • 2G, 2.5G, 3G base station transceivers: − GSM, EDGE, CDMA, WCDMA, LTE • General purpose RF systems Features • Programmable gain range: 3 to 23 dB

Contextual Info: TQP0104 DC to 4 GHz, 30 W, Discrete PA Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •

SKY65350-11

Abstract: SKY65350 201198B SKY65350-1 GSM module 2011
Contextual Info: PRELIMINARY DATA SHEET SKY65350-11: 350 MHz Receive/IF Module For 2G/3G Base Station Applications Applications • 2G, 2.5G, 3G base station transceivers: − GSM, EDGE, CDMA, WCDMA, LTE • General purpose RF systems Features • Programmable gain range: 3 to 23 dB

how dsp is used in radar

Abstract: JESD204 JESD204A Application of dsp in radar nxp proximity antenna design JESD204B beam steering DAC1408D radar front end Altera Stratix V
Contextual Info: JESD204A for wireless base station and radar systems November 2010 Maury Wood- NXP Semiconductors Deepak Boppana, Ian Land - Altera Corporation 0.0 Introduction - New trends for wireless base station and radar systems Digital Signal Processing DSP technology continues to transform radar systems and

ALTERA avalon

Abstract: RRU 32 SFP altera base station lte hsmc altera
Contextual Info: OBSAI Reference Design Data Sheet DS-01026-1.0 June 2011 The Open Base Station Architecture Initiative OBSAI specifications for base transceiver station (BTS) modules support a wide range of wireless communication protocols. This data sheet introduces and describes the Altera OBSAI reference design. The

Contextual Info: Product Brief Lantiq COSIC™-Modem The future-proven Single Chip Base Station Solution for DECT/ CAT-iq™ Basestations in VoIP Home Gateways DECT/ CAT-iq™ Solution • COSIC™-Modem: – CAT-iq base station functionality in combination with Lantiq Gateway solutions

T3150

Contextual Info: Transcede 3xxx Wireless Base Station System on Chip Data Sheet 843xx-DSH-001-A October 2013 Contents Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

SEMINAR ON 4G TECHNOLOGY

Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
Contextual Info: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications

mrf8s21140hs

Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
Contextual Info: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

232272461009

Abstract: MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies

frequency synthesizer for mobile wimax

Abstract: wimax base station base station lte ndk ocxo
Contextual Info: Crystal Oscillator Model Name NH37M28LC Oven-Controlled Crystal Oscillator OCXO for Fixed Communication Equipment • Main Application ● Mobile communications(LTE,WiMAX) base station ● Measuring instrument ● Synthesizer ● Exchanger ● High-end router

HSR6

Abstract: IRL96 J637
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

j598

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

j377

Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies

GSC356-HYB2500

Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies