BAT18 Search Results

DIODE marking A2

Abstract: smd A2 smd diode A2 smd diode 1301 marking AU smd transistor marking A2 BAT18 A2 diode BAT18-05 diode smd A2 BAT18-06
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1

BA582

Abstract: BAT18
Contextual Info: КД409А9 Универсальный диод в корпусе КТ-46 SOT23 аА0.336.650ТУ/03 Зарубежный аналог — BAT18 Обозначение Единицы измерения Значение Корпус КТ-46 (SOT23) UОБР. макс.

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s

BAT18

Contextual Info: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V

Contextual Info: Product specification BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

lN5401

Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20

Contextual Info: BAT18 Silicon planar diode Rev. 02 — 31 August 2004 Product data sheet 1. Product profile 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features • ■ ■ ■ Continuous reverse voltage: max. 35 V

Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series

A2 marking diode

Abstract: DIODE marking A2 diode Marking code A2 BAT18 DIODE A2 marking sot232 SOT-232 SOT23-2
Contextual Info: b3E D • bbìBISM 007M2S7 tMI « S I C 3 BAT18 _ WA PC /p HILIPS S E M I C O M FOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATASHEET SILICON PLANAR DIODE Band switching diode in a m icrom iniature plastic envelope. Intended fo r th ic k and th in -film circuits.

bat18 diode

Abstract: BAT18 marking AUs BAT18-05 AUS SOT23 BAT18-04 BCW66 ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package

smd diode code b1

Abstract: BAT18
Contextual Info: Product specification Philips Semiconductors Band-switching diode BAT18 PINNING FEATURES DESCRIPTION • Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a small rectangular plastic SOT23 SMD package. • Continuous forward current:

BAT18

Abstract: IEC134 marking code FV D0EM33S
Contextual Info: • bhSB'îBl D0E4335 SHE « A P X N AMER PHILIPS/DISCRETE BAT18 b7E D SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. QUICK REFERENCE DATA Continuous reverse voltage Forward current d.c.

bat18 a2

Abstract: BAT18 MAM185 marking code A2 diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT18 Band-switching diode Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BAT18

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

Contextual Info: • bhSBTBl QQ2433S 542 * A P X N AUER PHILIPS/DISCRETE BAT18 I SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max.

BAT18

Abstract: ASs infineon
Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series

BAT18

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT18 Band-switching diode Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BAT18

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

Contextual Info: Product specification Philips Semiconductors Band-switching diode BAT18 PINNING FEATURES DESCRIPTION • Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a small rectangular plastic SOT23 SMD package. • Continuous forward current:

SMD DIODE BOOK

Abstract: MAM185 BAT18 MBC846
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT18 Band-switching diode Product specification Supersedes data of April 1991 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BAT18 FEATURES DESCRIPTION • Continuous reverse voltage:

Contextual Info: BAT18 y v SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Forward current d.c. Junction temperature Vr max. 35 V •f

BAT18

Abstract: BAT18-05 BAT18-04
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance BAT18-04 BAT18-05 ! ! ,  ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode Maximum Ratings at TA = 25°C, unless otherwise specified

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ