BAW 76 B Search Results

Q62702-A397

Abstract: BAW76
Contextual Info: BAW 76 S iliziu m -P la n a r-L o g ik -D io d e B A W 7 6 ist eine Silizium-Planar-Diode in „Double-Heat-Sink"-Technik im Glasgehäuse 56 A 2 DIN 41883 D O -35 . Die Kathode ist durch einen roten Farbring gekennzeichnet. BAW 76 eignet sich besonders zum Einsatz als schnelle Schaltdiode in Rechenmaschinen,

BAW 76 b

Abstract: BAW76
Contextual Info: BAW76 Silicon planar logical diode BAW 76 is a silicon planar diode in "d o u b le heat s in k " technique in a case 56 A 2 DIN 41 883 D O -3 5 . The cathode is marked by a blue co lo u r ring. B AW 76 is particularly suitable fo r use as high-speed sw itch in com puters as w e ll as fo r general

BAW75

Abstract: BAW76
Contextual Info: FAIRCHILD SEMICONDUCTOR j i fiM DT|34t.Tb74 00275^2 S ' 84D 27292 D :- 34 69 67 4 FA IR C H I L D S E M I C O N D U C T O R I f a ir c h BAW75/BAW76 T-Z3-os~ l d High Speed Computer Diodes A Schlumberger Company' PACKAGES BAW75 BAW76 • t r r . . ,4 n s m ax

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

BKS-S 19

Abstract: BKS-S 20 BAW-M18MG-UAC80F-S04G BAW-M18ME-UAC50B-S04G MKK-050 BKS-S 20 19/BKS-S balluff baw ua 471 M12MI-UAC20B-S04G Baw delay line
Contextual Info: Analog Sensors Linear sensing of short travel Analog Sensors M8, M12, M18, PG 36, 80x80×40 Inductive Sensors Housing size Mounting Output signal Linear range sl M8×1 flush voltage 0.10 V 0.5.1.5 mm M12×1 flush voltage 0.10 V 0.5.2 mm Analog sensors .

BSS125

Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)

IN4152

Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Contextual Info: SWITCHING DIODES, GLASS PACKAGE Cent rmou* Forward Capacitance Reverse Rev Peak Voltage C Recovery Package ts i Dissipation Voltage Ctrl rent Drop Maximum Time Quantities Part P. fmW V, Volts) 1. ("A ) V, (Volta) V, (Volts) 1. {mAj Number (PF> T,. (nS) Hulkmeel

Contextual Info: SK50GD066ET ?- P JL Q$K 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$RS ?T P JL Q$ @$ ?T P IXL Q$ @$YZ *'-) VWW N VW C ?- P XW Q$ LW C IWW C [ JW N ?T P ILW Q$ V `- ?- P JL Q$ LV C ?- P XW Q$ aa C VW C ¥JW C @$YZP J : @$0%&

BD1501

Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B

in5282

Abstract: bax13 1N3064 1N3600 1N4009 1N4148 1N4149 1N914 J 1N4151 1N914B
Contextual Info: SWITCHING DIODES, GLASS PACKAGE Continuous liiS il! N um ber a m W Vi„IVqH s> C a p a c ita n ce R e v e r s e C. R e c o v e ry PatKaga Time Quantities Maximum Forw ard Voltage Drop Pow er Dissipation l É s i s g f í í i, in A) V (V o lts) V (V o lt 1 1 (mA|

BAX84

Abstract: 4531-2 esm 4148 1N3731 1N4149 1N4152 1N662 1N916 BAW75 BAW76
Contextual Info: silicon signal diodes diodes de signal au silicium 1H0MS0N-CSF Type •o v r -v r m Vf / if Ir / Vr |r i Vr c / *IT «F Case Tamb150°C max m A max (V) max (V) high speed switching (mA) max <nA) (V) max t*A ) (V) max max (pF) (ns) (mA) commutation rapide

osc 50mhz smd 5x7

Abstract: Sunny TCXO Motorola lv93 plastic raw material CRYSTAL SMD 25MHZ SUNNY NPC 5037 Sunny 50MHz sm5545tev Alcatel-Lucent SM7745DV
Contextual Info: Pletronics, Inc. Design/Idea Workshop Agenda & Content Guideline Integrated Supply Chain Motorola Confidential and Proprietary 1 Agenda 1. Overview 2. Key Financial Measures 3. Technology Roadmap 4. Manufacturing Flow Diagram 5. Cost Breakdown Integrated Supply Chain

bav20 itt

Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed

2U27

Abstract: cfa4 G3po ZKYR K849
Contextual Info: :E3.H HOZSO[ 9SKVO\OZ d3.VV HRKP\ \aYO 6L[XU]\O GX\KZa OWMXNOZ c;OK\]ZO[ e~JHK=?O NEUA JB ASOAMI=G @E=HAOAM upHH e9=MEJPN JPOKPO ?J@Az }~*l }EI=MTl -M=T ~J@Ai~PNOJHEU=>GAj e9=MEJPN =I@ DECD MANJGPOEJIiwrpl qprt @EQENEJINj e/4vti4=MOE=G R=OAMKMJJBl 3EG KMJJBj

Trimble ocxo

Abstract: doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors
Contextual Info: Reprinted from Ultrasonic Instruments and Devices 01999, Academic Press, Inc. The book is copyrighted, however this chapter is not, because the authors are employees of the U.S. Government and performed this work as part of their official duties. The work is therefore not subject to copyright protection.

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

g1758

Abstract: BYV27-200 byw32-200 G30D GP25M
Contextual Info: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53