BAX 53 Search Results

BAX53

Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
Contextual Info: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.

BAX12

Abstract: bay43
Contextual Info: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.

itt 3906

Abstract: NSL-28AA 3906 NSL-28 silonex NSL
Contextual Info: S IL O N E X IN C 47E D Ô2SS271 00Q 03SI, fl • SXI NSL-28 & NSL-28AA 0PT0IS0LAT0RS CO SILONEX 1 NSL-28. TEST CONDITIONS CHARACTERISTICS . MIN. TYP, BAX. . HIH. HSl~28AA TYP. HAX. . . UNITS . -LED* If . ttox f«d current VF F o m r d voltage IF=16aA IR

Contextual Info: AMP Aerospace/R uggedized Printed C ircuit Board Connectors Catalog 296350 issued 9-97 Extended M ini-Bax Pin Header Assem blies Style I H o u sing M a t e r ia l— L iq u ic c ry s ta l p o ly m e r C o n tact M a te r ia l an d F in is h — B ra ss p er Q Q -B -6 2 B p a tari 0 0 0 0 5 0

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

bax 50

Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 4Mbit 256K x 16 / 512K x 8 Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

LE28DW3212AT-80B

Abstract: sanyo sax
Contextual Info: 32 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 16Mbit 1024K x 16 / 2048K x 8 Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash

F14E

Abstract: F12E Sakata F13E LE28BW168T 2596H
Contextual Info: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28BW168T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

CEPO

Abstract: A723 b537 533B P7A1 W316
Contextual Info: 532,- 5645 ;:A2< 7/>05694 <27/B 3FCQROFP S v/B167<5 @3:/G S baam AE7B167<5 1/>/07:7BG S m11=@27<5 B= uqo gcaff^dbk*oe Zo=<B/1Bke_f9mln3/@/0:3 :=/2kba9m :=/2^1C@@3<B[ S mo^D=:B/53 2@7D7<5 7A 43/A70:3 S e9+ 273:31B@71 AB@3<5B6 Z03BE33< 1=7: /<2 1=<B/1BA[ S q<D7@=<;3<B/: 4@73<2:G >@=2C1B Z|=t} 1=;>:7/<B[

f16e

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28DW8102T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles

CD Z44

Abstract: M1127 P7A1 A723 bca 07 BAA 9K 3B71 B637
Contextual Info: 532,- 5645 ;:A2< 7/>05694 <27/B 3FCQROFP S v/B167<5 @3:/G S baam AE7B167<5 1/>/07:7BG S m11=@27<5 B= uqo gcaff^dbk*oe Zo=<B/1Bke_f9mln3/@/0:3 :=/2kba9m :=/2^1C@@3<B[ S mo^D=:B/53 2@7D7<5 7A 43/A70:3 S e9+ 273:31B@71 AB@3<5B6 Z03BE33< 1=7: /<2 1=<B/1BA[ S q<D7@=<;3<B/: 4@73<2:G >@=2C1B Z|=t} 1=;>:7/<B[

Reduced-Latency-DRAM

Abstract: HYB18RL25616AC HYB18RL25632AC
Contextual Info: HYB18RL25632AC HYB18RL25616AC Graphics & Speciality DRAMs 256 Mbit DDR Reduced Latency DRAM Version 1.60 July 2003 HYB18RL25616/32AC 256 Mbit DDR Reduced Latency DRAM Edition Jun. 2002 This edition was realized using the software system FrameMaker. Published by Infineon Technologies,

MT49H16M18C

Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

smd dk qk

Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

smd marking codes BA5

Abstract: MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

SMD d1c

Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

MT49H16M18

Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

marking code a02 SMD Transistor

Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

MT49H16M18

Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

MARKING H1 AMP

Abstract: MT49H16M18
Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization