BAX1 Search Results

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BAX13

Abstract: 34696 27293 100-C 5005I
Contextual Info: FAIRCHILD SEMICONDUCTOR fl4 DiF| 3 4 ^ 7 4 84D 27293 3 469674 F A I R C H I L D S E M I C O N D U C T O R A S chlum berger C om pany : BAX13 FA IRCHILD 00572^3 7 r: D ot" High Speed Switching Diode ' PACKAGE BAX13 • C . . . 3 . 0 p F MAX • trr • .4.0 n t (MAX)

BAX14

Abstract: MAM246 GENERAL PURPOSE DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass

Contextual Info: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,

7z66b

Abstract: BAX18 diode td3 general purpose diode
Contextual Info: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage

BAX14

Abstract: general purpose diode
Contextual Info: Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX14 is a general purpose switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27

BAX12A

Abstract: BAX12 equivalent BAX12
Contextual Info: Certificate TH97/10561QM BAX12, BAX12A Certificate TW00/17276EM CONTROLLED AVALANCHE DIODES M1A FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA

BAX12

Abstract: BAX12 equivalent DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BAX18

Contextual Info: TH97/2478 www.eicsemi.com BAX18 IATF 0113686 SGS TH07/1033 TH09/2479 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V

BAX12A

Abstract: BAX12 equivalent G1.L BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes Product specification Supersedes data of 1996 Sep 17 2002 Apr 08 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION

Contextual Info: N AUER PHILIPS/DISCRETE bbSB'iai DD2b372 2T4 BAX18 l b'BE D IAPX GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope primarily intended for rectifier applications Q U IC K R E F E R E N C E D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage

BAX14

Contextual Info: • bb53T31 Ü02b3t.b TTÜ * A P X BAX14 N AMER PHILIPS/DISCRETE b'IE D G E N E R A L PU RPO SE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.

BAX12 equivalent

Abstract: BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX12

Contextual Info: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone

Contextual Info: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.

BAX16

Abstract: general purpose diode GENERAL PURPOSE DIODE BAX16 FAIRCHILD DIODE
Contextual Info: BAX16 High Voltage General Purpose Diode DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Symbol V RRM * T a = 25°C unless otherwise noted Parameter Value Unit 150 V Maximum Repetitive Reverse Voltage IF AV Average Rectified Forward Current

BAX14

Abstract: DO-204AH
Contextual Info: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free

BAX16

Contextual Info: BAX16 High Voltage General Purpose Diode DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current

BAX14

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

Contextual Info: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free

BAX12

Abstract: DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX14

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES

BAX12

Abstract: D035
Contextual Info: Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)