BB CUW Search Results

GP 729

Abstract: FIA5486 R526
Contextual Info: F?HD8NGTC AMSNO?H A?J FCMICOGA?HHS NC?HCB MCH?S RGOF :9? HK?B FD=;:< E[Wjkh[i 2 JeWZ YWd X[ 54@ 6<SZ2Y2 2 G_]^ WcX_[dj Wffb_YWX_b_jo 2 5 Eehc B 2 @bb c[jWb m[bZ[Z YedijhkYj_ed 2 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h Bed\ehc je FIA5486@16446 .Dgk_lWb[dj je KHJ1O19;9;/

ITT 2222 npn

Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
Contextual Info: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

429t

Contextual Info: F?HD9NGTC AMSNO?H A?J NCJNGOGQC FCMICOGA?HHS NC?HCB CHCAOMK I?EJCOGA MCH?S FD=;:< E[Wjkh[i 3 3 3 3 3 P[di_j_l[ jof[ Be_b fem[h YWd X[ 429T EW_bkh[ hWj[ b[l[b YWd X[ b[l[b K @bb c[jWb m[bZ[Z YedijhkYj_ed G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h Bed\ehc je FIA:9A1= . Dgk_lWb[dj je KHJ1NOE17=45:/

Contextual Info: SCHOTTKY BARRIER DIODE GCQ20A03L FCQ20A03L 20A/30V 1.K.055 1.2 047) FEA TU RES 10.4U09) 3.K.122) MAX 3.7Î.145) 10.3i.40S) l / » '* OTO-220AB : GCQ20A03L OTO-220AB Fully Molded Isolation : FCQ20A03L 6061 1553! oDual Diodes - Cathode Common MAX5' OLow Forward Voltage Drop

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

Contextual Info: 30E D £ T 7 • TTSTEB? 0031412 * ■ 'T :'Z S -\'l _ S G S -T H O M S O N ^ 7 # T G F 1 4 9 -1 0 0 A -» 600A S G S-THOMSON FAST SWITCHING THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY EXCELLENT SURGE CAPABILITY HIGH di/dt AND dv/dt RATINGS

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

yc 829

Contextual Info: ;:= BNTOP@I B@K < ELNJ B GDNJDPHB@IIT OD@IDC DIDBPNL J@FKDPHB NDI@T SHPG BLHI PN@KOHDKP OQMMNDOOHLK GE><; EYUcdaYb S^i] Xd^a igVch^Zci hjeegZhh^dc IdVY XVc WZ 6@ 6<RY2X2 EV^ajgZ gViZ aZkZa XVc WZ aZkZa J G^\] VbW^Zci Veea^XVW^a^in C^dYZ ^ch^YZ @aa bZiVa lZaYZY XdchigjXi^dc

Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 □02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile

capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Contextual Info: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

resistor MR25

Abstract: transistor tt 2222 resistor MR25 philips philips MR25 MR25 resistor led MR25 MR25 TT 2222 philips resistor mr25 MR25 resistors
Contextual Info: N AMER PH IL IP S/ DIS CRE TE bTE D m ^53 ^ 3 1 002001b fibM I IAPX BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3T31 DDETISS OES BLV94 Jl IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz communication band. Features

122d transistor

Abstract: SL 100 NPN Transistor 122d rf 2222 Scans-004952
Contextual Info: b'ìE D N AMER PHILIPS/DISCRETE li 1^53^31 0QEÛÔ03 10b H A P X ‘' BLU11/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 4 7 0 M Hz band. Features • • • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.

cq 0565

Abstract: pdcr 921 TLCS-900 16mfe 48 mqsi rmk bh TMP92CW10F AOS date code System I200AR I200A
Contextual Info: T O S H IB A Preliminary TMP92CW10F Specification Revision 1.1 Histor Revision 1.0 Date 28 Dec. 200 0 Note Initial draft 1.1 17 Jan. 2001 A mistake correction 17 January 2001 T O S H IB A Under Development Preliminary TMP92CW10 CMOS 32-bit Micro-controller

BLV37

Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Contextual Info: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain

Z86E2112PSC

Abstract: z86e21 hb404 3738A2 St Z86E21
Contextual Info: P r o d u c t S p e c if ic a t io n U 3 E Z86E21 CMOS Z8 M ICRO CO N TRO LLER 8K OTP W ITH FEATURES • 8-Bit CMOS Microcontroller ■ RAM and EPROM Protect ■ 40-Pin DIP, 44-Pin PLCC, or 44-Pin QFP Package ■ 8 Kbytes of EPROM ■ 4.5V to 5.5V Operating Range

ltkd

Abstract: F207 RTT4 20T60 400C
Contextual Info: NEU ENGLAND MICROWAVE bt, D E '! b 5 b 3 4 ü 3 □□00G7E □ ' T-&Q.2! New Product Bulletin PIN SWITCH DRIVERS • High-speed switching of PIN diodes, le ss than 10 nanoseconds • Useful for switching rates to 10 MHZ • Choice of lo g ic , for inverting or

UGWM2US

Abstract: 2.4Ghz DSSS radio CYWUSB6934 CYWUSB6935 mtbf antenna unigen 2.4 ghz RSSI 24765m Unigen Corporation UNIGEN
Contextual Info: WirelessUSB - UGWM1US Data Sheet Solutions for a Real Time World UNIGEN CORP. WIRELESS MODULE PRODUCTS PART NUMBER FAMILY: JUNO-M WIRELESSUSB™ RADIO MODULES UGWM1US & UGWM2US SERIES SHORT RANGE MODULES Issue Date: 18 October 2004 Revision: 1.00 Revision History

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

1W radio transmitter block diagrams

Abstract: 4538 CYWUSB6934 CYWUSB6935 antenna mtbf Unigen Corporation
Contextual Info: WirelessUSB - UGWB/L Data Sheet Solutions for a Real Time World UNIGEN CORP. WIRELESS MODULE PRODUCTS PART NUMBER FAMILY: JUNO-B/L WIRELESSUSB™ RADIO MODULES UGWB AND UGWL SERIES SHORT AND MEDIUM RANGE MODULES Issue Date: 18 October 2004 Revision: 1.02

CYWUSB6935

Abstract: UNIGEN 20us rf module mtbf
Contextual Info: WirelessUSB - UGWR2US Data Sheet Solutions for a Real Time World UNIGEN CORP. WIRELESS MODULE PRODUCTS PART NUMBER FAMILY: UGWR2US SERIES JUNO-LPA WIRELESSUSB™ RADIO MODULE Issue Date: 7 October 2005 Revision: 1.1 Revision History Rev. No. 1.0 1.1 History

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

nais inverter vf-8e

Contextual Info: I lM lI I V n S I September 1989 80C51-L/80C31 -L DATA SHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER-LOW POWER 80C51-L-CMOS SINGLE-SHIP 8-BIT MICROCONTROLLER with factory mask-programmable ROM 80C31-L-CMOS SINGLE-CHIP 8-BIT CONTROL-ORIENTED CPU with RAM and I/O

6C86A

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT DATA T6C86A, T6C86B SILICON MONOLITHIC DOT MATRIX LCD DRIVER The T 6C86A / T 6C86B are an LCD driver for small- to medium- size dot matrix Liquid Crystal Display LCD . These combine the functions o f the conventional T9841B