BB REF 200U Search Results

Mdt10p73k

Abstract: MDT10P73 MDT10P73K11 MDT10P73S11 MDT10P73SS11
Contextual Info: MDT10P73 BB 1. General Description -CCP1, CCP2, SCM, USAR, USAT A/D converter module: This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power -5 analog inputs multiplexed into one A/D

C1204B

Contextual Info: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or

Class d 1000 WATT

Abstract: EMCO High Voltage uwr-5/4000-d12a-c 1000 Watt dc/dc converter schematic ROTA E Series sp 500 48v transorb failure UWR-12/1650-D48A ZENER B02 D48A
Contextual Info: UWR Series Single Output, High Reliability, 2" x 2", 14-20 Watt, DC/DC Converters Typical units FEATURES PRODUCT OVERVIEW Low cost! Highly reliable! Proven SMT-on-pcb construction Designed to meet UL/ EN60950, BASIC insulation D48A models mark available (48VIN models)

KM44C4100BK

Contextual Info: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

pt100 pspice

Abstract: ,pt100 with wheatstone bridge instrument SRHR-233 HS15P SRHR-233C circuit humidity sensor HS15P rtd pt100 transmitter circuit using opamp Wheatstone Bridge INA 125 P din 43760 its 90 NTC 20K honeywell
Contextual Info: Sensors and the Analog Interface by Thomas Kuehl – Senior applications engineer Texas Instruments - Tucson In this presentation we will discuss the way to monitor many different physical phenomena, such as temperature, air flow, humidity, and power. We will discuss

Contextual Info: A73P24P01 Preliminary Mouse, Keyboard Transmitter Document Title Mouse, Keyboard Transmitter Revision History Rev. No. 0.0 History Issue Date Remark Initial issue January 3, 2002 Preliminary Important Notice: AMIC reserves the right to make changes to its products or to discontinue any integrated circuit product or

Contextual Info: LT3013B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES n n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65µA Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed

3013b

Abstract: LT3013B LT3013BEDE LT3013BEFE converter s16 6-pin 4.5V TO 100V INPUT REGULATOR
Contextual Info: LT3013B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES n n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed

Contextual Info: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This

d1n914

Abstract: diode d1n914 3012hfe 3012EFE D1N91 LT3012HFE FE16 LT3012 LT3012EDE LT3012EFE
Contextual Info: LT3012 250mA, 4V to 80V Low Dropout Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 40 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed Adjustable Output from 1.24V to 60V

Contextual Info: 64Mb Synchronous DRAM Specification P2V64S406TP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S406TP 4-bank x 1,048,576-word x 16-bit

M12L64164A-7T

Abstract: M12L64164A-7T 54 PIN PIN OUT DATA 1M x 16-Bit x 4 Banks synchronous DRAM
Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

M12L64164A-7TG

Abstract: M12L64164A M12L64164A-5TG M12L64164A-6TG M12L64164A-7T
Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12L64164A Operation temperature condition -40℃ ~ 85℃ SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

M12L64164A

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

M12L64164A

Abstract: M12L64164A-5TG M12L64164A-7TG M12L64164A-6TG M12L64164A-7T
Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)

M12L64164A-7T

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)